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Specific Process Knowledge/Thin film deposition/PECVD: Difference between revisions

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[[index.php?title=Category:Equipment|Thin film PECVD]]
[[index.php?title=Category:Thin Film Deposition|PECVD]]


==PECVD Plasma Enhanced Chemical Vapor Deposition==
==PECVD Plasma Enhanced Chemical Vapor Deposition==
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*SiH<sub>4</sub>:0-60 sccm
*SiH<sub>4</sub>:0-60 sccm
*N<sub>2</sub>O:0-3000 sccm
*N<sub>2</sub>O:0-3000 sccm
*NH<sub>3</sub>:0-300 sccm
*NH<sub>3</sub>:0-287 sccm
*N<sub>2</sub>:0-3000 sccm
*N<sub>2</sub>:0-3000 sccm
*Ar:0-1000 sccm
*Ar:0-1415 sccm
*5%PH<sub>3</sub>:0-100 sccm
*5%PH<sub>3</sub>:0-100 sccm
*3%B<sub>2</sub>H<sub>6</sub>:0-850 sccm
*3%B<sub>2</sub>H<sub>6</sub>:0-270 sccm
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!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates
!style="background:silver; color:black" align="left" rowspan="3" valign="top" |Substrates