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Specific Process Knowledge/Lithography/UVExposure/aligner MLA3: Difference between revisions

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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
2,000 edits
 
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'''Features'''
'''Features'''
*Optical Autofocus
*Pneumatic Autofocus
*Pneumatic Autofocus
*Top side Alignment
*Top side Alignment
*Back side Alignment
*Back side Alignment
*Gray Scale Exposure
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*Advanced Field Alignment Mode for alignment to individual chips/devices on the substrate
*High Aspect Ratio Mode for exposure of thick resists
*200 x 200 mm exposure field


'''User manual'''<br>
'''User manual'''<br>
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|-
! scope=row style="text-align: left;" | Dynamic focusing method
! scope=row style="text-align: left;" | Dynamic focusing method
|  
| Pneumatic
*Pneumatic
|-
|-
! scope=row style="text-align: left;" | Minimum resolution
! scope=row style="text-align: left;" | Minimum resolution
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