Specific Process Knowledge/Lithography/Aligners/MAvsMLA: Difference between revisions
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Mask design used in the investigation: [[Media:LithoTestAlign 2025 v10.gds|LithoTestAlign_2025_v10.gds]] | Mask design used in the investigation: [[Media:LithoTestAlign 2025 v10.gds|LithoTestAlign_2025_v10.gds]] | ||
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=Tools used in the investigation= | |||
*Wafers | |||
**100mm Si, SSP <100> | |||
*Resists | |||
**[[Specific_Process_Knowledge/Lithography/5214E|AZ 5214E]] (image reversal resist, but processed positive) | |||
**[[Specific_Process_Knowledge/Lithography/MiR|AZ MiR 701]] (positive tone resist) | |||
**[[Specific_Process_Knowledge/Lithography/nLOF|AZ nLOF 2020]] (negative tone resist) | |||
*Spin coating (incl. HMDS) | |||
**[[Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_UV|Spin Coater: Gamma UV]] | |||
*Exposure | |||
**[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-2|Aligner: MA6-2]] | |||
**[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-1|Aligner: MA6-1]] (in PolyFabLab) | |||
**[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2|Aligner: Maskless 02]] | |||
**[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1|Aligner: Maskless 01]] | |||
*Development (incl. PEB, if relevant) | |||
**[[Specific_Process_Knowledge/Lithography/Development/UV_developer|Developer: TMAH UV-lithography]] | |||
*Inspection | |||
**[[Specific_Process_Knowledge/Characterization/Optical_microscope|Microscope Olympus MX63]] | |||
**[[Specific_Process_Knowledge/Characterization/SEM_Supra_1|SEM Supra 1]] | |||
**[[Specific_Process_Knowledge/Characterization/SEM_Supra_3|SEM Supra 3]] | |||
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=Data from the investigation= | =Data from the investigation= | ||