Specific Process Knowledge/Thin film deposition/Deposition of Chromium: Difference between revisions

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-Chromium can be deposited by e-beam evaporation. It should be noted that Chromium does not melt but evaporates directly from the solid phase. Chromium can be sputter deposited aswell. In the chart below you can compare the different deposition equipment.
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=/... click here]'''
+<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
+== Studies of Cr deposition processes ==
+[[/Roughness of Chromium|Roughness of Chromium]] - ''Roughness and Uniformity of Cr layers deposited with different methods and settings''
+[[/Sputtering of Cr in Sputter System (Lesker)|Sputtering of Cr in Sputter system (Lesker)]] - ''Settings and deposition rates''
+[[/Sputtering of Cr in Cluster Lesker PC1|Sputtering of Cr in Sputter-system Metal-Oxide (PC1)]] - ''Settings and deposition rates''
+[[/Sputtering of Cr in Cluster Lesker PC3|Sputtering of Cr in Sputter-system Metal-Nitride (PC3)]] - ''Settings and deposition rates''
+[[/Thermal evaporation of Cr in Thermal evaporator|Thermal evaporation of Cr in Thermal evaporator]] - ''Settings and deposition results''
+[[Specific_Process_Knowledge/Thin_film_deposition/Lesker/Stress_dependence_on_sputter_parameters_in_the_Lesker_sputter_system#Cr:_High_tensile_stress|Stress in sputtered Cr films]] - ''Extremely high tensile stress in Cr films deposited at high temperature''
+== Chromium deposition ==
+Chromium can be deposited by e-beam evaporation, thermal evaporation, and sputter deposition. It should be noted that in e-beam evaporation, chromium does not melt but evaporates directly from the solid phase. In the chart below you can compare the different deposition equipment.
 {| border="1" cellspacing="0" cellpadding="4"
-!
-! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Alcatel|Alcatel]])
+|-style="background:silver; color:black"
-! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
+!
-! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Wordentec|Wordentec]])
+! E-beam evaporation ([[Specific Process Knowledge/Thin film deposition/Temescal|E-beam evaporator (Temescal)]] and [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]])
+! Thermal evaporation ([[Specific Process Knowledge/Thin film deposition/thermalevaporator|Thermal evaporator]])
+! Sputter deposition ([[Specific Process Knowledge/Thin film deposition/Lesker|Lesker sputterer]])
+! Sputter deposition ([[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|(Sputter-system Metal-Oxide (PC1) and Sputter-system Metal-Nitride (PC3)) ]])
 |-
-| Batch size
+|-style="background:WhiteSmoke; color:black"
+! General description
+|E-beam deposition of Chromium
+|Thermal deposition of Chromium
+|Sputter deposition of Chromium
+|Sputter deposition of Chromium
+|-
+|-style="background:LightGrey; color:black"
+! Pre-clean
+|Ar ion gun (only in E-beam evaporator Temescal)
 |
-*Up to 1x4" wafers
-*smaller pieces
 |
-*24x2" wafers or
+|RF Ar clean
-*6x4" wafers or
-*6x6" wafers
-|
-*24x2" wafers or
-*6x4" wafers or
-*6x6" wafers
 |-
-| Pre-clean
+|-style="background:WhiteSmoke; color:black"
-|RF Ar clean
+! Layer thickness
-|RF Ar clean
+|10Å to 300 nm*
-|RF Ar clean
+|100 nm
+|at least up to 200 nm
+|at least up to 200 nm
 |-
-| Layer thickness
+|-style="background:LightGrey; color:black"
-|10Å to 1µm
+! Deposition rate
-|10Å to 1µm
+|1 Å/s to 10 Å/s
-|.
+|1 Å/s
+|Depends on [[/Sputtering of Cr in Sputter System (Lesker)|process parameters]]. At least up to 1.48 Å/s. See process log.
+|Depends on process parameters.
 |-
-| Deposition rate
-|2Å/s to 15Å/s
+|-style="background:WhiteSmoke; color:black"
-|10Å/s to 15Å/s
-|Depending on process parameters, see [[Sputtering of Cr in Wordentec|here.]]
+! Batch size
+|
+*4x6" wafers or
+*3x8" wafers (ask for holder)
+*Many smaller pieces
+|
+*Up to *3x 4" wafers or
+*1x6" or 1x 8" wafer
+*Many smaller samples
+|
+*1x6" wafers
+*Smaller pieces/wafers
+|
+*up to 10x4" wafers or
+*up to 10x6" wafers or
+* many smaller samples
 |-
-|}
+|-style="background:LightGrey; color:black"
+! Allowed materials
+|
+Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=511 cross-contamination sheet].
+|
+Almost any that does not degas. See the [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=404 cross-contamination sheet].
+|
+* Silicon wafers
+* and almost any
+|
+*Almost that does not degas - see cross contamination sheets for [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 PC1] and [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=442 PC3]
+* Special carrier for III-V materials.
-== Studies of Cr deposition processes ==
+|-
+|-style="background:WhiteSmoke; color:black"
+! Comment
+| Takes approx. 20 min to pump down
+| Takes approx. 20 min to pump down
+|
+| Takes approx. 5 min to pump down load lock and 6 min for transfer to processing chamber
-[[/Deposition of Chromium|Uniformity of Cr layers]] - ''Uniformity of Cr layers deposited with different methods and settings''
+|-
-[[Sputtering of Cr in Wordentec]] - ''Settings and deposition rates''
+|}
+'''*''' ''For thicknesses above 300 nm, please request permission from metal@nanolab.dtu.dk to ensure there is enough material and to prioritize chamber cleaning as Cr tends to be a high-stress layer and thus causes flaking,''