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==From February 2024: RESIST PYROLYSIS FURNACE==


'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace:_Multipurpose_annealing#Multipurpose_annealing_furnace click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thermal_Process/Furnace:_Multipurpose_annealing#Multipurpose_annealing_furnace click here]'''
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[[Category: Furnaces|A2]]
[[Category: Furnaces|A2]]


==The Resist Pyrolysis furnace==
==The Resist Pyrolysis furnace (from February 2024)==


[[Image:ATV_ovn.jpg|thumb|365x365px|Multipurpose Annealing Furnace. Positioned in cleanroom B-1. Photo: DTU Nanolab internal]]
[[Image:ATV_ovn.jpg|thumb|365x365px|Resist Pyrosysis furnace. Positioned in cleanroom B-1. Photo: DTU Nanolab internal]]
[[Image:ATV_ovn_boat.jpg|thumb|335x335px|Boat with wafers for the Multipurpose Annealing Furnace. Photo: DTU Nanolab internal]]
[[Image:ATV_ovn_boat.jpg|thumb|335x335px|Boat with wafers for the Resist Pyrolysis furnace. Photo: DTU Nanolab internal]]


The Multipurpose Annealing Furnace it made by ATV Technologie, and it was installed in the cleanroom in 2015.  
The Resist Pyrolysis furnace it made by ATV Technologie, and it was installed in the cleanroom in January 2015.  


The purpose of the Multipurpose Annealing Furnace is annealing and dry oxidation of different samples and resist pyrolysis. Annealing and resist pyrolysis can be done in vacuum or at atmospheric pressure, in a N<sub>2</sub> or H<sub>2</sub> atmosphere or a mixture of the two gasses.  
In November 2024 the furnace was repaired by ATV Technologie. At the repair, the whole furnace body was changed, and all heaters were replaced. Also, the process exhaust flow was decreased by changing a valve in the exhaust line.


All process gasses (except purge nitrogen) are heated, before they are introduced into the furnace at the door side.
Until February 2024, the furnace was named "Multipurpose Anneal furnace", and then it became the "Resist Pyrolysis furnace".


Is is possible to change all quartz ware in the furnace (the furnace tube, the door sealing and the wafer boat). At the moment Nanolab has two different sets of quartz ware:
The Resist Pyrolysis furnace is a research tool. It means, that it is mainly available for users working on certain research projects, especially in the Biomaterial Microsystems Group at DTU Nanolab.  


*Metal: Dedicated for different samples that cannot be RCA cleaned. Also samples with metals are allowed in the furnace, when this quartz set is mounted
The furnace is mainly being used for resist pyrolysis. It can also be used for annealing in nitrogen (N<sub>2</sub>) (or forming gas, i.e. up to 4% H<sub>2</sub> mixed with N<sub>2</sub>, but this has not been tested) and oxidation with oxygen (O<sub>2</sub>), but O<sub>2</sub> is mostly used for cleaning of the furnace after resist pyrolysis processes.
*Resist pyrolysis: Dedicated for resist pyrolysis.  


Please note that all new materials have to be approved by the Thin Film group (thinfilm@nanolab.dtu.dk) before they are allowed in the furnace.  
For resist pyrolysis, samples with different resist layers are heated up to maximum 1050 <sup>o</sup>C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample. If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed, thus it is important to evacuate the furnace and flush it with nitrogen, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.


The furnace tube is heated by use of 12 long heaters situated along the furnace tube and combined in three groups (top, bottom left and bottom right) and two flat heaters situated in the ends of the furnace tube. The this way the temperature will be very uniform everywhere in the furnace tube. The heating can be done very fast, up to 30 <sup>o</sup>C/min. For atmospheric pressure processes the maximum temperature is 1100 <sup>o</sup>C, and for vacuum processes the maximum temperature is 1050 <sup>o</sup>C.  
Process steps can run either at atmospheric pressure or in vacuum. A small N<sub>2</sub> or O<sub>2</sub> flow (up to 2 SLM) can be applied in vacuum steps.  


The furnace body surrounding the furnace tube consists of a top and bottom half-shell. To cool down the furnace (when the temperature is below 800 <sup>o</sup>C), the top half shelf can be lifted up, and cooling fans will then flow air from the surroundings around the furnace tube to cool it down. However, for safety reasons, the cooling fans will not the activated when there is hydrogen in the furnace, and cooling will then be very slow.  
The quartz parts in the furnace (the furnace tube, the door sealing and the wafer boat) can be changed, depending on what processes and samples the furnace is used for, but it has been decided that a quartz set for resist resist pyrolysis will be mounted in the furnace all the time. This limits the number of materials that are allowed in the furnace.


It is not possible to open the furnace when the temperature is above 300 <sup>o</sup>C.
Please note that all new resist types and other materials have to be approved by the Thin Film group (thinfilm@nanolab.dtu.dk) before they are allowed in the furnace.  


For resist pyrolysis, samples with different resist layers are heated up to maximum 1100 <sup>o</sup>C in a nitrogen atmosphere. At high temperatures carbon is formed by pyrolysis of the resist. In this way conductive structures can be made from a resist patterned sample. If oxygen from the air or from outgassing of the resist is present in the furnace, the resist layer will be removed, thus it is important to evacuate the furnace and flush it with nitrogen, before a high temperature for resist pyrolysis is obtained. Pyrolysis of a large amount of resist may also be a problem due to resist outgassing.  
All process gases (except purge nitrogen) are heated, before they are introduced into the furnace at the door side.
 
The furnace tube is heated by use of 12 long heaters situated along the furnace tube and combined in three groups (top, bottom left and bottom right) and two flat heaters situated in the ends of the furnace tube. This ensures that the temperature will be very uniform everywhere in the furnace tube. The heating can be done very fast, up to 30 <sup>o</sup>C/min. The maximum allowed process temperature is normally 1050 <sup>o</sup>C, however up to 1100 <sup>o</sup>C without vacuum is possible. The maximum allowed process time at 1050 <sup>o</sup>C is 3 hours.
 
The furnace body surrounding the furnace tube consists of a top and bottom half-shell. To cool down the furnace (when the temperature is below 800 <sup>o</sup>C and not for processes with H<sub>2</sub>), the top half shelf can be lifted up, and cooling fans will then flow air from the surroundings around the furnace tube to cool it down. 
 
It is not possible to open the furnace, when the temperature is above 300 <sup>o</sup>C.




'''The user manual, technical information and contact information can be found in LabManager:'''
'''The user manual, technical information and contact information can be found in LabManager:'''


'''[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=340 Furnace: Multipurpose annealing]'''
'''[http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=340 Resist Pyrolysis furnace]'''
 


==Process information==
==Process information==
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Oxidation: look at the [[Specific Process Knowledge/Thermal Process/Oxidation|Oxidation]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*Annealing: look at the [[Specific Process Knowledge/Thermal Process/Annealing|Annealing]] page
*[[Specific_Process_Knowledge/Thermal_Process/Furnace:_Multipurpose_annealing/Acceptance test|Results from the Multipurpose Anneal Furnace acceptance test]]
*[[Specific_Process_Knowledge/Thermal_Process/Furnace:_Multipurpose_annealing/Acceptance test|Results from the Resist Pyrolysis furnace acceptance test]]
*[[Specific_Process_Knowledge/Thermal_Process/Pyrolysis/Pyrolysis_with_Multipurpose_Anneal_Furnace|Pyrolysis]]
*[[Specific_Process_Knowledge/Thermal_Process/Pyrolysis/Pyrolysis_with_Multipurpose_Anneal_Furnace|Resist pyrolysis]]


==Overview of the performance of the ATV furnace and process related parameters==
==Overview of the performance of the ATV furnace and process related parameters==
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*Pyrolysis of different resists
*Annealing in N<sub>2</sub>
*Annealing in forming gas (up to 5% H<sub>2</sub> mixed with N<sub>2</sub>) - Not tested
*Dry oxidation of silicon  
*Dry oxidation of silicon  
*Annealing in N<sub>2</sub>, H<sub>2</sub> or a mixture of the two gasses
*Pyrolysis of different resists
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!style="background:silver; color:black" align="center"|Performance
!style="background:silver; color:black" align="center"|Performance
|style="background:LightGrey; color:black"|Film thickness
|style="background:LightGrey; color:black"|Film thickness
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*Dry oxidation: 50 Å  to ~200 nm SiO<sub>2</sub> (it takes too long to grow a thicker oxide layer)
*Dry oxidation of silicon: 50 Å  to ~200 nm SiO<sub>2</sub> (it takes too long to grow a thicker oxide layer)
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!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process parameter range
|style="background:LightGrey; color:black"|Process temperature
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*No vacuum: Room temperature - 1100 <sup>o</sup>C - Normally maximum 1050 <sup>o</sup>C allowed
*Vacuum: Room temperature - 1050 <sup>o</sup>C
*Standby: Down to room temperature
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range
|style="background:LightGrey; color:black"|Process time
|style="background:LightGrey; color:black"|Process Temperature
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*No vacuum: 25 <sup>o</sup>C - 1100 <sup>o</sup>C
*Maximum 3 hours at 1050 <sup>o</sup>C
*Vacuum: 25 <sup>o</sup>C - 1050 <sup>o</sup>C  
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|style="background:LightGrey; color:black"|Process pressure
|style="background:LightGrey; color:black"|Process pressure
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*1 atm
*Atmospheric pressure
*Vacuum down to ~0.1 mbar (depends on gas flow)
*Vacuum: Pressure down to ~0.1 mbar (gas flow dependent)
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|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gases on the system
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*N<sub>2</sub>: 20 slm
Atmospheric pressure:
*O<sub>2</sub>: 10 slm
*N<sub>2</sub>: 20 SLM - Maximum 10 SLM recommended (to protect the heaters)
*H<sub>2</sub>: 5 slm (max 2 slm for vacuum processes)
*O<sub>2</sub>: 10 SLM
*N<sub>2</sub> mix : 10 slm (for H<sub>2</sub>-N<sub>2</sub> gas mixture)
*H<sub>2</sub>: 5 SLM - Not allowed
*N<sub>2</sub> mix: 10 SLM (for forming gas, i.e. up to 5% H<sub>2</sub> mixed with N<sub>2</sub>) - Not tested
Vacuum:
*N<sub>2</sub>: 2 SLM
*O<sub>2</sub>: 2 SLM
*H<sub>2</sub>: Not allowed
*N<sub>2</sub> mix : Not allowed
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates
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*1-30 50 mm, 100 mm or 150 mm wafers per run
*1-30 50 mm, 100 mm or 150 mm wafers per run
*1-50 200 mm wafers per run (not possible with all quartz sets)
*Smaller samples (placed horizotally on a Si carrier wafer)
*Smaller samples (placed on Si carrier wafers)
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|style="background:LightGrey; color:black"|Substrate materials allowed
|style="background:LightGrey; color:black"|Substrate materials allowed
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*Depends on the quartz set
*Normally only samples for resist pyrolysis approved by Nanolab
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