Specific Process Knowledge/Etch/KOH Etch: Difference between revisions
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*TEOS oxide from furnace: 300nm etched in 11 min | *TEOS oxide from furnace: 300nm etched in 11 min | ||
jemafh@nilt 2019-Marts: | jemafh@nilt 2019-Marts: | ||
*Standard from PECVD3: selectivity 1:100 to Si | *Standard from PECVD3: selectivity 1:100 to Si(100) | ||
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|style="background:WhiteSmoke; color:black"|See etchrates for PECVD SiN [https://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride/Deposition_of_Silicon_Nitride_using_PECVD/PECVD3:_Low_stress_nitride_testing#DOE_made_to_find_a_good_QC_nitride_recipe_with_low_stress_and_low_KOH_etch_rate_(by_Berit_Herstrøm_@_DTU_Nanolab_2016_Marts) here] | |style="background:WhiteSmoke; color:black"|See etchrates for PECVD SiN [https://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_Silicon_Nitride/Deposition_of_Silicon_Nitride_using_PECVD/PECVD3:_Low_stress_nitride_testing#DOE_made_to_find_a_good_QC_nitride_recipe_with_low_stress_and_low_KOH_etch_rate_(by_Berit_Herstrøm_@_DTU_Nanolab_2016_Marts) here] | ||
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|style="background:LightGrey; color:black"|Etch rates in LPCVD Si3N4 and SiN | |style="background:LightGrey; color:black"|Etch rates in LPCVD Si3N4 and SiN | ||