Specific Process Knowledge/Lithography: Difference between revisions
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=Lithography= | =Lithography= | ||
[[ | [[file:DUV_wafers.jpg|400px|thumb|right|Waveguides created using DUV lithography.]] | ||
__TOC__ | __TOC__ | ||
Lithography is a | Lithography is a technique used to transfer patterns from a physical or digital mask onto a substrate. At DTU Nanolab, four different lithography methods are available, each suited to specific applications and requirements. | ||
'''UV lithography'''<br> | |||
UV lithography is a widely used technique in microfabrication for creating patterns on a substrate using ultraviolet light. It is particularly effective for producing features down to about 1 micrometer in size, making it suitable for many conventional semiconductor and microsystem applications. The process relies on transferring patterns from a mask (physical or digital) onto a photoresist-coated surface, offering a reliable and relatively cost-effective approach for medium-resolution fabrication tasks. | |||
<br | '''DUV stepper lithography'''<br> | ||
Deep ultraviolet (DUV) stepper lithography is an advanced form of optical lithography designed to achieve much smaller feature sizes, typically down to around 200 nanometers. By using shorter wavelengths and precision stepper systems, it enables high-resolution patterning across wafers with excellent alignment accuracy. This method is commonly used in modern semiconductor manufacturing, where scaling down device dimensions is critical for improving performance and integration density. | |||
'''E-beam lithography'''<br> | |||
Electron-beam (e-beam) lithography is a highly precise patterning technique that uses a focused beam of electrons instead of light to define structures. It enables the fabrication of extremely small features, reaching dimensions as low as about 10 nanometers. Due to its high resolution and flexibility, it is often used for research, prototyping, and mask fabrication, although it is generally slower and more expensive than optical methods. | |||
'''Nanoimprint lithography'''<br> | |||
Nanoimprint lithography is a patterning technique that relies on mechanically imprinting or stamping nanoscale features onto a surface without the need for irradiation. By pressing a mold into a resist layer, it can replicate fine structures with high fidelity and at relatively low cost. This method is particularly attractive for large-area and high-throughput applications, offering a straightforward alternative to more complex lithographic processes. | |||
=Comparing lithography methods at DTU Nanolab= | =Comparing lithography methods at DTU Nanolab= | ||
{| class="wikitable" width="100%" | {| class="wikitable" width="100%" | ||
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! scope=row style="text-align: left;" | Generel description | ! scope=row style="text-align: left;" | Generel description | ||
| Pattern transfer via ultraviolet (UV) | | Pattern transfer via ultraviolet light (UV) || Pattern transfer via deep ultraviolet light (DUV) || Patterning by electron beam || Pattern transfer via hot embossing (HE) | ||
|- | |- | ||
! scope=row style="text-align: left;" | Pattern size range | ! scope=row style="text-align: left;" | Pattern size range | ||
| ~1 µm and up<br>(resist type, thickness, and pattern dependent) || ~200 nm and up<br>(pattern type, shape and pitch dependent) || ~10-1000 nm<br>(and larger at high currents) || ~20 nm and up | | ~1 µm and up<br>(resist type, thickness, and pattern dependent) || ~200 nm and up<br>(pattern type, shape and pitch dependent) || ~10-1000 nm<br>(and larger at high currents) || ~20 nm and up | ||
|- | |- | ||
! scope=row style="text-align: left;" | | ! scope=row style="text-align: left;" | Standard resists | ||
| | | | ||
UV sensitive: | UV sensitive, positive tone: | ||
*AZ 5214E | *AZ 5214E | ||
*AZ 5214E | *AZ 4562 | ||
*AZ MiR 701 | |||
UV sensitive, negative tone: | |||
*AZ 5214E | |||
*AZ nLOF 2020 | |||
*SU-8 | |||
| | | | ||
DUV sensitive: | DUV sensitive, positive tone: | ||
*JSR KRF M230Y | *JSR KRF M230Y | ||
*UVN2300-0.8 | *JSR KRF M35G | ||
DUV sensitive, negative tone: | |||
*UVN2300-0.8 | |||
| | | | ||
E-beam sensitive: | E-beam sensitive, positive tone: | ||
*AR- | *AR-P 6200.xx (CSAR) | ||
*HSQ | *ZEP 502A | ||
*PMMA | |||
E-beam sensitive, negative tone: | |||
*HSQ | |||
*mr-EBL | |||
*AR-N 7520 | |||
| | | | ||
Imprint polymers: | Imprint polymers: | ||
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Throughput is up to 60 wafers/hour | Throughput is up to 60 wafers/hour | ||
| | | | ||
Process dependent: | Process dependent: | ||
*Dose [µC/cm<sup>2</sup>]: <math>Q</math> | *Dose [µC/cm<sup>2</sup>]: <math>Q</math> | ||
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*Pattern area [cm<sup>2</sup>]: <math>a</math> | *Pattern area [cm<sup>2</sup>]: <math>a</math> | ||
Process time [s]: <math>t = \frac{Q \sdot a}{I}</math> | Process time [s]: <math>t = \frac{Q \sdot a}{I}</math> | ||
| Process dependent, including heating/cooling rates | | Process dependent, including heating/cooling rates | ||
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<br> | <br> | ||
'''[[Specific Process Knowledge/Lithography/Coaters|Automatic spin coating]]''' | '''[[Specific Process Knowledge/Lithography/Coaters|Automatic spin coating]]''' | ||
*[[Specific_Process_Knowledge/Lithography/Coaters | *[[Specific_Process_Knowledge/Lithography/Coaters/GammaUV|Spin Coater: Gamma UV]] | ||
*[[Specific Process Knowledge/Lithography/ | *[[Specific Process Knowledge/Lithography/Coaters/GammaDUV|Spin Coater: Süss Stepper]] | ||
*[[Specific_Process_Knowledge/Lithography/Coaters | *[[Specific_Process_Knowledge/Lithography/Coaters/GammaEbeam|Spin Coater: Gamma e-beam & UV]] | ||
'''[[Specific Process Knowledge/Lithography/Coaters|Manual spin coating]]''' | '''[[Specific Process Knowledge/Lithography/Coaters|Manual spin coating]]''' | ||
*[[Specific Process Knowledge/Lithography/Coaters | *[[Specific Process Knowledge/Lithography/Coaters/RCD8|Spin Coater: RCD8]] | ||
*[[Specific_Process_Knowledge/Lithography/Coaters | *[[Specific_Process_Knowledge/Lithography/Coaters/labspin|Spin Coater: Labspin 02/03]] | ||
*[[Specific_Process_Knowledge/Lithography/Coaters/labspin04|Spin Coater: Labspin 04 (PFL)]] | |||
'''[[Specific Process Knowledge/Lithography/Coaters|Spray coating]]''' | '''[[Specific Process Knowledge/Lithography/Coaters|Spray coating]]''' | ||
*[[Specific_Process_Knowledge/Lithography/Coaters | *[[Specific_Process_Knowledge/Lithography/Coaters/sprayCoater|Spray Coater]] | ||
'''[[Specific Process Knowledge/Lithography/Baking|Soft & hard baking]]''' | '''[[Specific Process Knowledge/Lithography/Baking|Soft & hard baking]]''' | ||
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<br> | <br> | ||
'''[[Specific Process Knowledge/Lithography/UVExposure|UV Exposure Tools]]''' | '''[[Specific Process Knowledge/Lithography/UVExposure|UV Exposure Tools]]''' | ||
*[[Specific_Process_Knowledge/Lithography/UVExposure | *[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-1|Aligner: MA6-1 (PFL)]] | ||
*[[Specific_Process_Knowledge/Lithography/UVExposure | *[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MA6-2|Aligner: MA6-2]] | ||
*[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA1|Aligner: Maskless 01]] | |||
*[[Specific Process Knowledge/Lithography/UVExposure | *[[Specific Process Knowledge/Lithography/UVExposure/aligner_MLA2|Aligner: Maskless 02]] | ||
*[[ | *[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA3|Aligner: Maskless 03]] | ||
*[[Specific_Process_Knowledge/Lithography/UVExposure | *[[Specific_Process_Knowledge/Lithography/UVExposure/aligner_MLA4|Aligner: Maskless 04 (PFL)]] | ||
*[[Specific_Process_Knowledge/Lithography/ | *[[Specific_Process_Knowledge/Lithography/Aligners/MAvsMLA|Mask Aligner vs Maskless Aligner]] | ||
'''[[Specific_Process_Knowledge/Lithography/DUVStepperLithography|Deep-UV Exposure]]''' | '''[[Specific_Process_Knowledge/Lithography/DUVStepperLithography|Deep-UV Exposure]]''' | ||
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<br> | <br> | ||
'''[[Specific Process Knowledge/Lithography/Descum|Descum]]''' | '''[[Specific Process Knowledge/Lithography/Descum|Descum]]''' | ||
*[[Specific Process Knowledge/Lithography/Descum | *[[Specific Process Knowledge/Lithography/Descum/plasmaAsher03|Plasma Asher 3: Descum]] | ||
*[[Specific Process Knowledge/Lithography/Descum | *[[Specific Process Knowledge/Lithography/Descum/plasmaAsher04|Plasma Asher 4]] | ||
*[[Specific Process Knowledge/Lithography/Descum | *[[Specific Process Knowledge/Lithography/Descum/plasmaAsher05|Plasma Asher 5]] | ||
*[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)|BHF]] | *[[Specific_Process_Knowledge/Etch/Wet_Silicon_Oxide_Etch_(BHF)|BHF]] | ||
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'''[[Specific Process Knowledge/Lithography/Strip|Strip]]''' | '''[[Specific Process Knowledge/Lithography/Strip|Strip]]''' | ||
*[[Specific Process Knowledge/Lithography/Strip | *[[Specific Process Knowledge/Lithography/Strip/plasmaAsher03|Plasma Asher 3: Descum]] | ||
*[[Specific Process Knowledge/Lithography/Strip | *[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04|Plasma Asher 4]] | ||
*[[Specific Process Knowledge/Lithography/Strip | *[[Specific Process Knowledge/Lithography/Strip/plasmaAsher05|Plasma Asher 5]] | ||
*[[Specific Process Knowledge/Lithography/Strip | *[[Specific Process Knowledge/Lithography/Strip/resistStrip|Resist Strip]] | ||
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