Specific Process Knowledge/Etch/IBE⁄IBSD Ionfab 300/IBE Ti etch: Difference between revisions

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==Results from the acceptance test in February 2011==
==Results from the acceptance test in February 2011==
'''Acceptance test for Ti etch:'''
'''Acceptance test for Ti etch :'''
{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  
|-
|-
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*50 mm SSP Si wafer
*50 mm SSP Si wafer
*525 µm thick
*525 µm thick
*Supplied by Danchip
*Supplied by Nanolab
|.
|.
|-
|-
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!style="background:silver; color:black" align="left" valign="top"|Features to be etched
!style="background:silver; color:black" align="left" valign="top"|Features to be etched
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*300nm - 3µm dots and lines + a square of 200µmx200µm
*300 nm - 3µm dots and lines + a square of 200µmx200µm
|.
|.
|-  
|-  
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!style="background:silver; color:black" align="left" valign="top"|Etch rate
!style="background:silver; color:black" align="left" valign="top"|Etch rate
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*>80nm/min
*>80 nm/min
|
|
*22nm/min +- 0.3nm/min (one standard deviation)
*22 nm/min +- 0.3nm/min (one standard deviation)
|-
|-
!style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity
!style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity
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*+-(0.8% +-0.5%)
*+-(0.8% +-0.5%)
|-
|-
!style="background:silver; color:black" align="left" valign="top"|Selectivity (Au etch rate/ZEP etch rate)
!style="background:silver; color:black" align="left" valign="top"|Selectivity (Ti etch rate/ZEP etch rate)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*At least 1:1
*At least 1:1
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*~77dg @123nm
*~77dg @123nm
|}
|}
====Process parameters for the acceptance test====
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
!Ti etch acceptance
|-
|Neutralizer current [mA]
|550
|-
|RF Power [W]
|1200
|-
|Beam current [mA]
|500
|-
|Beam voltage [V]
|600
|-
|Beam accelerator voltage
|400
|-
|Ar flow to neutralizer [sccm]
|6.0
|-
|Ar flow to beam [sccm]
|6.0
|-
|Rotation speed [rpm]
|20
|-
|Stage angle [degrees]
|20
|-
|}




===Some SEM profile images of the etched Au===
===Some SEM profile images of the etched Ti===
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{| border="1" cellspacing="1" cellpadding="2"  
!
!

Latest revision as of 16:45, 6 February 2023

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This page is written by Berit Herstrøm @ DTU Nanolab (BGHE) if nothing else is stated

Results from the acceptance test in February 2011

Acceptance test for Ti etch :

. Acceptance Criteria

Acceptance Results

Substrate information
  • 50 mm SSP Si wafer
  • 525 µm thick
  • Supplied by Nanolab
 .
Material to be etched
  • E-beam deposited Ti
 .
Mask information
  • E-beam resist mask:
  1. 400nm of spin coated ZEP520A e-beam resist
  2. Patterned by E-beam lithography
 .
Features to be etched
  • 300 nm - 3µm dots and lines + a square of 200µmx200µm
 .
Etch depth
  • 300nm
  • ~270 nm
Etch rate
  • >80 nm/min
  • 22 nm/min +- 0.3nm/min (one standard deviation)
Etch rate uniformity
  • <+-2%
  • +-(0.2% +-0.2%)
Reproducibility
  • <+-2%
  • +-(0.8% +-0.5%)
Selectivity (Ti etch rate/ZEP etch rate)
  • At least 1:1
  • 0.7:1
Etch profile
  • 70-90dg.
  • ~65dg @270nm
  • ~77dg @123nm

Process parameters for the acceptance test

Parameter Ti etch acceptance
Neutralizer current [mA] 550
RF Power [W] 1200
Beam current [mA] 500
Beam voltage [V] 600
Beam accelerator voltage 400
Ar flow to neutralizer [sccm] 6.0
Ar flow to beam [sccm] 6.0
Rotation speed [rpm] 20
Stage angle [degrees] 20



Some SEM profile images of the etched Ti

Ti s10-4: 270nm deep - 500nm line. all zep has gone. Profile: ~65 dg.
Ti s10-5: 270nm deep - 300nm line. All zep has gone. Profile: ~65 dg.
Ti S7 5: 123nm deep - 300nm line. Still zep left. Profile: ~77 dg
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