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New page: ==Results from the acceptance test in February 2011== '''Acceptance test for Ti etch:''' {| border="2" cellspacing="0" cellpadding="2" |- !style="background:silver; color:black;" align="l...
 
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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/IBE⁄IBSD_Ionfab_300/IBE_Ti_etch click here]'''
<br> {{CC-bghe1}}
==Results from the acceptance test in February 2011==
==Results from the acceptance test in February 2011==
'''Acceptance test for Ti etch:'''
'''Acceptance test for Ti etch :'''
{| border="2" cellspacing="0" cellpadding="2"  
{| border="2" cellspacing="0" cellpadding="2"  
|-
|-
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*50 mm SSP Si wafer
*50 mm SSP Si wafer
*525 µm thick
*525 µm thick
*Supplied by Danchip
*Supplied by Nanolab
|.
|.
|-
|-
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!style="background:silver; color:black" align="left" valign="top"|Features to be etched
!style="background:silver; color:black" align="left" valign="top"|Features to be etched
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*300nm - 3µm dots and lines + a square of 200µmx200µm
*300 nm - 3µm dots and lines + a square of 200µmx200µm
|.
|.
|-  
|-  
!style="background:silver; color:black" align="left" valign="top"|Etch depth
!style="background:silver; color:black" align="left" valign="top"|Etch depth
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*300nm
*300nnm
|
|
*~270 nm
*~270 nm
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!style="background:silver; color:black" align="left" valign="top"|Etch rate
!style="background:silver; color:black" align="left" valign="top"|Etch rate
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*>80nm/min
*>80 nm/min
|
|
*22nm/min +- 0.3nm/min (one standard deviation)
*22 nm/min +- 0.3nnm/min (one standard deviation)
|-
|-
!style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity
!style="background:silver; color:black" align="left" valign="top"|Etch rate uniformity
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<+-2%
*<&plusmn;2%
|
|
*+-(0.2% +-0.2%)
*&plusmn;(0.2% &plusmn;0.2%)
|-
|-
!style="background:silver; color:black" align="left" valign="top"|Reproducibility
!style="background:silver; color:black" align="left" valign="top"|Reproducibility
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*<+-2%
*<&plusmn;2%
|
|
*+-(0.8% +-0.5%)
*&plusmn;(0.8% &plusmn;0.5%)
|-
|-
!style="background:silver; color:black" align="left" valign="top"|Selectivity (Au etch rate/ZEP etch rate)
!style="background:silver; color:black" align="left" valign="top"|Selectivity (Ti etch rate/ZEP etch rate)
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
*At least 1:1
*At least 1:1
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*~77dg @123nm
*~77dg @123nm
|}
|}
====Process parameters for the acceptance test====
{| border="2" cellspacing="2" cellpadding="3"
!Parameter
!Ti etch acceptance
|-
|Neutralizer current [mA]
|550
|-
|RF Power [W]
|1200
|-
|Beam current [mA]
|500
|-
|Beam voltage [V]
|600
|-
|Beam accelerator voltage
|400
|-
|Ar flow to neutralizer [sccm]
|6.0
|-
|Ar flow to beam [sccm]
|6.0
|-
|Rotation speed [rpm]
|20
|-
|Stage angle [degrees]
|20
|-
|}




===Some SEM profile images of the etched Au===
===Some SEM profile images of the etched Ti===
{| border="1" cellspacing="1" cellpadding="2"  
{| border="1" cellspacing="1" cellpadding="2"  
!
!
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