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==Process Information==
==Process Information==
Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|here]].
'''Typical stripping parameters'''<br>
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20-30 minutes
*Time (full boat): 90 minutes


 
==Process development sections==
'''Processes specifically only for plasma asher 5:'''<br>
*[[Specific Process Knowledge/Lithography/Strip/plasmaAsher04_processDevelopment|Stripping with plasma asher 4 and plasma asher 5]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 1]]
*[[Specific Process Knowledge/Lithography/Descum/plasmaAsher05|Descumming with plasma asher 4 and plasma asher 5]]
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |CF<sub>4</sub> etch of SiO<sub>2</sub> in Plasma Asher 1]]
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