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==Aligner: MA6-1==
=Aligner: MA6-1=
[[Image:KSAligner in E-4.jpg|400px|thumb|The Aligner: MA6-1 is located in PolyFabLab.]]
[[File:KSAligner in E-4.jpg|400px|thumb|The Aligner: MA6-1 is located in PolyFabLab.]]


SUSS Mask Aligner MA6 is designed for high resolution photolithography.
'''Tool description'''<br>
The 365nm exposure wavelength version is capable of 1.25 (1.0) um resolution in vacuum contact. All contact exposure programs (vacuum, hard, soft, proximity) are supplied.
The Aligner: MA6-1 is a manual UV exposure system, which can be used for mask alignment and exposure of UV resists on 100 mm substrates. It is also capable of flood exposing chips, 50 mm and 150 mm substrates.
Two alignment options are available: top side alignment (TSA) with a split field or a video microscope and back side alignment (BSA) with BSA microscope. It is also possible to make IR- light alignment.


{| class="wikitable"
! style="text-align:left" | Product:
| style="padding-left: 10px" | Süss mask aligner MA6
|-
! style="text-align:left" | Year of purchase:   
| style="padding-left: 10px" | 1999
|-
! style="text-align:left" | Location:
| style="padding-left: 10px" | PolyFabLab
|}
'''User manual'''<br>
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager] - '''requires login'''
'''Tool training'''<br>
Training on the tool requires users to complete the [https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography#Lithography_Tool_Package_Training lithography TPT] followed by reading the manual and watching the training videos. The tool authorization can be obtained after a successful hands-on authorization training session.<br>


'''Training videos:'''
The training videos were made for MA6-2, but operation of MA6-1 is very similar as they are exactly the same model. Due to a different power supply, however, procedures for ignition and intensity control of the lamp is different for MA6-1. Please refer to the manual for the correct procedures.  
<br/>The training videos were made for MA6-2, but operation of MA6-1 is very similar as they are exactly the same model. Due to a different power supply, however, procedures for ignition and intensity control of the lamp is different for MA6-1. Please refer to the manual for the correct procedures.  


[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]
[https://www.youtube.com/watch?v=o8IBtfQHNzU Operation]


[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]
[https://www.youtube.com/watch?v=rvUuXYgw-xU Alignment]
<br clear="all" />


The user manual(s), quality control procedure(s) and results, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=44 LabManager]  - '''requires login'''
=Equipment performance and process related parameters=


===Exposure dose===
{| class="wikitable"
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners|Information on UV exposure dose]]
|-
 
! scope=row style="text-align: left;" | Purpose
===Process information===
| Mask alignment and UV exposure
The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm.
|-
 
! scope=row style="text-align: left;" | Exposure modes
Link to information about [[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|alignment mark design and locations]].
|  
 
*Vacuum contact
<!--
*Hard contact
===Quality Control (QC)===
*Soft contact
{| border="1" cellspacing="2" cellpadding="2" colspan="3"
*Proximity
|bgcolor="#98FB98" |'''Quality Control (QC) for KS Aligner'''
*Flood exposure
|-
|-
|
! scope=row style="text-align: left;" | Exposure light/filters
*[http://labmanager.dtu.dk/d4Show.php?id=5644&mach=44 The QC procedure for Aligner: MA6-1] - '''requires login'''<br>
|  
*[https://labmanager.dtu.dk/view_binary.php?type=data&mach=44 The newest QC data for Aligner: MA6-1] - '''requires login'''
*365 nm (i-line)
{| {{table}}
*broadband (i-, g-, h-lines), requires tool change
| align="center" |  
*303 nm, requires tool change
{| border="1" cellspacing="1" cellpadding="2"  align="center" style="width:300px"
 
! QC Recipe:
! Manual intensity measurement
|-  
|Measurement area
|100 mm
|-  
|Number of measurements
|5
|-
|-
|}
! scope=row style="text-align: left;" | Minimum resolution
| align="center" valign="top"|
| ~1.25 µm
{| border="2" cellspacing="1" cellpadding="2" align="center" style="width:400px"
!QC limits
!Aligner: MA6-1
|-
|-
|Nominal intensity
! scope=row style="text-align: left;" | Mask size
|8 mW/cm<sup>2</sup> @ 365 nm
| 5x5 inches
|-
|-
|Intensity deviation from nominal
! scope=row style="text-align: left;" | Alignment modes
|≤5%
|  
*Top side (TSA): ±2 µm
*Back side (BSA): ±5 µm
|-
|-
|Intensity non-uniformity
! scope=row style="text-align: left;" | Substrate size
|≤2%
|  
*Mask exposure and alignment: 100 mm wafers
*Flood exposure: from samples to 150 mm wafers
|-
|-
|}
! scope=row style="text-align: left;" | Allowed materials
| All PolyFabLab allowed materials
|-
|-
! scope=row style="text-align: left;" | Substrate batch
| 1
|}
|}
Power supply and/or lamp will be adjusted if intensity is outside the limit.
|}
-->


===Equipment performance and process related parameters===
<br clear="all" />


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
=Process information=
 
The Aligner: MA6-1 has an i-line notch filter installed. This results in an exposure light peak around 365nm with a FWHM of 7nm.
 
!style="background:silver; color:black;" align="center" width="60"|Purpose
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black" colspan="2"|
Alignment and UV exposure
|-


!style="background:silver; color:black" align="left" valign="center" rowspan="5"|Performance
==Exposure dose==
[[Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseMaskAligners#Aligner:_MA6-1|Information on UV exposure dose]]


|style="background:LightGrey; color:black"|Exposure mode
==Alignment mark design and locations==
|style="background:WhiteSmoke; color:black" colspan="2"|
[[Specific_Process_Knowledge/Pattern_Design#Alignment_marks|Alignment mark design and locations]].
vacuum contact, hard contact, soft contact, proximity, flood exposure
|-
| style="background:LightGrey; color:black"|Exposure light/filters
|style="background:WhiteSmoke; color:black" colspan="2"|
*365 nm (i-line)
*broadband (i-, g-, h-line), requires tool change
*(303 nm, requires tool change)
|-
|style="background:LightGrey; color:black"|Minimum structure size
|style="background:WhiteSmoke; color:black" colspan="2"|
down to 1.25µm
|-
|style="background:LightGrey; color:black"|Mask size
|style="background:WhiteSmoke; color:black" colspan="2"|
*5x5 inch
|-
|style="background:LightGrey; color:black"|Alignment modes
|style="background:WhiteSmoke; color:black" colspan="2"|
*Top side (TSA), ±2µm
*Backside (BSA), ±5µm
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black" colspan="2"|
Mask exposure and alignment:
* 100 mm wafers
Flood exposure:
* samples up to 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black" colspan="2"|
All PolyFabLab materials
|-
|style="background:LightGrey; color:black"|Batch
|style="background:WhiteSmoke; color:black" colspan="2"|
1
|-
|}
<br clear="all" />
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