Specific Process Knowledge/Lithography/Resist/UVresist/exposureDoseNaOH: Difference between revisions
Created page with "The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. All doses are for standard silicon wafers, unless otherwise stated. Development is done using AZ 351B developer (NaOH) diluted 1:5. ===Aligner: MA6-1=== The Aligner: MA6-1 has an i-line..." |
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=Exposure dose when using AZ 351B as developer= | |||
The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. | The exposure doses listed below are for ''generic'' good exposure results, and can be a compromise between getting good lines, as well as good dots, in both clear field and dark field exposures. The optimal dose for any given specific project, could be different from the listed values. | ||
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==Aligner: MA6-1== | |||
The Aligner: MA6-1 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm. | The Aligner: MA6-1 has an i-line notch filter installed. This produces an exposure light peak around 365 nm with a FWHM of 7 nm. | ||