Specific Process Knowledge/Thin film deposition/ALD2 (PEALD): Difference between revisions
| (One intermediate revision by the same user not shown) | |||
| Line 5: | Line 5: | ||
=ALD 2 (PEALD)= | =ALD 2 (PEALD)= | ||
[[Category: Equipment|Thin film]] | [[index.php?title=Category:Equipment|Thin film]] | ||
[[Category: Thin Film Deposition|ALD]] | [[index.php?title=Category:Thin Film Deposition|ALD]] | ||
| Line 63: | Line 63: | ||
*[[/HfO2 deposition using ALD2| HfO<sub>2</sub> deposition using '''ALD 2 (PEALD)''']] | *[[/HfO2 deposition using ALD2| HfO<sub>2</sub> deposition using '''ALD 2 (PEALD)''']] | ||
*[[/AlN deposition using ALD2| AlN deposition using '''ALD 2 (PEALD)''']] | *[[/AlN deposition using ALD2| AlN deposition using '''ALD 2 (PEALD)''']] | ||
| Line 71: | Line 69: | ||
*[[/Al2O3 deposition using plasma ALD2 at room temperature| Al<sub>2</sub>O<sub>3</sub> deposition using '''ALD 2 (PEALD)''' at room temperature]] | *[[/Al2O3 deposition using plasma ALD2 at room temperature| Al<sub>2</sub>O<sub>3</sub> deposition using '''ALD 2 (PEALD)''' at room temperature]] | ||
'''Obsolete process:''' | |||
*[[/SiO2 deposition using ALD2| SiO<sub>2</sub> deposition using '''ALD 2 (PEALD)''']] | |||
==Equipment performance and process related parameters== | ==Equipment performance and process related parameters== | ||
| Line 101: | Line 103: | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Oxides: Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm | *Oxides: Al<sub>2</sub>O<sub>3</sub>, TiO<sub>2</sub>, HfO<sub>2</sub>, ZnO, AZO: 0-100 nm | ||
*Nitrides: | *Nitrides: AlN, TiN: 0-100 nm | ||
<i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i> | <i>As the purpose of ALD 2 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. Deposition of thicker layers is not allowed, because this will occupy the machine for long time and thus make it available for less users. Long depositions also cause issues and with flakes and particles, which means that the chamber and the pump line will have to be cleaned or changed quite often. Furthermore, the delivery time on precursors is usually quite long. So when you make a sample design, you should avoid steps, where you need to deposit thicker layers than 100 nm with ALD, or you can consider, if the same material can be deposited using other machines in the cleanroom.</i> | ||
|- | |- | ||