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Specific Process Knowledge/Etch/Wet III-V Etches: Difference between revisions

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It is very important that you dispose off chemicals and process waste according to DTU Nanolab regulations and risk assessments for your work.
It is very important that you dispose off chemicals and process waste according to DTU Nanolab regulations and risk assessments for your work.
'''For the GaAs and InP substrate etching, waste should be collected and marked ''Carcinogenic''.
If it contains H2O2 use empty H2O2 bottles (since they should have a special lid that avoid over pressure).
There should be waste bottles in the fumehood for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs and InGaAsP substrates marked '''"for Carcinogenic materials like InP and GaAs in Acid and Hydrogenperoxide".'''
And one for acid etch of InP marked '''"for Carcinogenic materials like InP and GaAs in Acid - ''NO H2O2"'''
This does not apply for etching epilayers.
If you need a new bottle, contact Nanolab.
[[Image:FH07.jpg|300x300px|right|thumb|'Fume hood 07' in cleanroom D3]]
[[Image:FH07.jpg|300x300px|right|thumb|'Fume hood 07' in cleanroom D3]]
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== InP substrate etching ==
When etching InP substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.
There should be a bottle in the fumehood for HCl used to etch InP substrates.
Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. For InP waste a clean and empty developer bottle can be used.
== GaAs substrate etching ==
When etching GaAs substrates, both 2” wafers and small pieces, you should collect the used chemicals in a waste bottle. This does not apply for etching epilayers.
There should be a bottle in the fumehood for citric acid: H2O2 or H2SO4 (10%):H2O2 used to etch GaAs substrates.
Once the bottle is full, it should be brought to the basement of building 346 and a new one placed in the CR. '''For the GaAs waste you should use empty H2O2 bottles (since they should have a special lid that avoid over pressure).'''


==HCl:H3PO4 etch==
==HCl:H3PO4 etch==
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C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> is a selective etch of GaAs; does not etch Al<sub>x</sub>Ga<sub>{1-x}</sub>As if x > 0.45.
C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> is a selective etch of GaAs; does not etch Al<sub>x</sub>Ga<sub>{1-x}</sub>As if x > 0.45.


Solid C<sub>6</sub>H<sub>8</sub>O<sub>7</sub> is mixed 1:1 by weight with H<sub>2</sub>O (30%) using magnetic stirring. The solution C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O is thereafter mixed 4:1 volume ratio with H<sub>2</sub>O<sub>2</sub>.
Solid C<sub>6</sub>H<sub>8</sub>O<sub>7</sub> is mixed 1:1 by weight with H<sub>2</sub>O using magnetic stirring. The solution C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O is thereafter mixed 4:1 volume ratio with H<sub>2</sub>O<sub>2</sub>(30%).


The above C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> solution has an etch-rate of ~360 nm/min in GaAs and < 0.5 nm/min in AlAs @ 25 degC.
The above C<sub>6</sub>H<sub>8</sub>O<sub>7</sub>:H<sub>2</sub>O<sub>2</sub> solution has an etch-rate of ~360 nm/min in GaAs and < 0.5 nm/min in AlAs @ 25 degC.
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