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Specific Process Knowledge/Etch/Titanium Oxide: Difference between revisions

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==Comparison of Titanium Oxide (ALD) etch Methods [[Image:section under construction.jpg|70px]]==
==Comparison of Titanium Oxide (ALD) etch Methods ==


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Latest revision as of 14:23, 4 September 2025

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Etch of Titanium oxide has been test in the ICP metal etcher.


Comparison of Titanium Oxide (ALD) etch Methods

BHF ICP Metal Etcher
Generel description Wet etch of TiO2 (ALD) Dry etch of TiO2
Etch rate range 2,5 nm/min
  • It has not been explored
  • current recipe ~8 nm/min
Etch profile
  • Isotropic
  • Anisotropic
Substrate size
  • Any size (in beaker)
  • Samples < 150 mm wafers on carrier
  • one 150 mm wafer at a time
Allowed materials In beaker:
  • Any material
  • silicon, silicon oxides and nitrides
  • Al, Cr, Ti (incl. oxides and nitrides)
  • Ta, W, Nb (incl. oxides and nitrides)
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