Specific Process Knowledge/Lithography/Coaters: Difference between revisions
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=Coater Comparison Table= | =Coater Comparison Table= | ||
{| class="wikitable" | |||
{| | |- | ||
! | |||
! | ! [[Specific_Process_Knowledge/Lithography/Coaters/GammaUV|Spin Coater: Gamma UV]] | ||
! [[Specific_Process_Knowledge/Lithography/Coaters/GammaDUV|Spin Coater: Süss Stepper]] | |||
! [[Specific_Process_Knowledge/Lithography/Coaters/GammaEbeam|Spin Coater: Gamma E-beam and UV]] | |||
! [[Specific_Process_Knowledge/Lithography/Coaters/RCD8|Spin Coater: RCD8]] | |||
! [[Specific_Process_Knowledge/Lithography/Coaters/labspin|Spin Coater: LabSpin 02]] | |||
! [[Specific_Process_Knowledge/Lithography/Coaters/labspin|Spin Coater: LabSpin 03]] | |||
! [[Specific_Process_Knowledge/Lithography/Coaters/labspin04|Spin Coater: LabSpin 04]] | |||
| | ! [[Specific_Process_Knowledge/Lithography/Coaters/sprayCoater|Spray Coater]] | ||
|- | |- | ||
! scope=row| Purpose | |||
! | | | ||
*In-line substrate HMDS priming | *In-line substrate HMDS priming | ||
*Coating and baking of | *Coating and baking of | ||
| Line 30: | Line 28: | ||
**AZ nLOF 2020 | **AZ nLOF 2020 | ||
**AZ 5214E | **AZ 5214E | ||
| | |||
*Coating and baking of | *Coating and baking of | ||
**BARC (DUV42S-6) | **BARC (DUV42S-6) | ||
| Line 36: | Line 34: | ||
**KRF M35G | **KRF M35G | ||
**UVN2300-0.8 | **UVN2300-0.8 | ||
| | |||
*In-line substrate HMDS priming | *In-line substrate HMDS priming | ||
*Coating and baking of | *Coating and baking of | ||
| Line 44: | Line 42: | ||
**AZ 4562 | **AZ 4562 | ||
*Edge bead removal on novolac-based resist and SU-8 | *Edge bead removal on novolac-based resist and SU-8 | ||
| | |||
*Coating of | *Coating of | ||
**SU-8 | **SU-8 | ||
| Line 52: | Line 50: | ||
**AZ nLOF | **AZ nLOF | ||
*Edge bead removal | *Edge bead removal | ||
|colspan="2 | |colspan="2"| | ||
*Coating of E-beam resists | *Coating of E-beam resists | ||
** CSAR, ZEP, PMMA/MMA, HSQ(FOx) | ** CSAR, ZEP, PMMA/MMA, HSQ(FOx) | ||
| Line 58: | Line 56: | ||
**AZ5214E, AZ4562, AZMiR701, AZnLOF, SU-8 | **AZ5214E, AZ4562, AZMiR701, AZnLOF, SU-8 | ||
*Coating of imprint resists | *Coating of imprint resists | ||
| | | | ||
*Coating of | |||
**SU-8 | |||
**mr-DWL | |||
**other resists | |||
NB: this tool is in PolyFabLab | |||
| | |||
*Spraying imprint resist | *Spraying imprint resist | ||
*Spraying photoresist | *Spraying photoresist | ||
*Spraying of other solutions | *Spraying of other solutions | ||
|- | |- | ||
! scope=row| Substrate handling | |||
! | | | ||
* Cassette-to-cassette | * Cassette-to-cassette | ||
* Vacuum handling and detection | * Vacuum handling and detection | ||
* Vacuum spin chuck | * Vacuum spin chuck | ||
| | |||
* Cassette-to-cassette | * Cassette-to-cassette | ||
* Vacuum handling and detection | * Vacuum handling and detection | ||
* Vacuum spin chuck | * Vacuum spin chuck | ||
| | |||
* Cassette-to-cassette | * Cassette-to-cassette | ||
* Vacuum handling and detection | * Vacuum handling and detection | ||
* Vacuum spin chuck | * Vacuum spin chuck | ||
| | |||
* Single substrate | * Single substrate | ||
* Vacuum chuck for 4" and 6" | * Vacuum chuck for 4" and 6" | ||
* 4" non-vacuum chuck for fragile substrates | * 4" non-vacuum chuck for fragile substrates | ||
|colspan="2 | |colspan="2"| | ||
* Single substrate | * Single substrate | ||
* Vacuum chucks for chips, 2", 4", and 6" | * Vacuum chucks for chips, 2", 4", and 6" | ||
* 4" edge handling chuck | * 4" edge handling chuck | ||
| | |||
* Single substrate | |||
* Vacuum chucks for chips, 4", and 6" | |||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
Can handle almost any sample size and shape | Can handle almost any sample size and shape | ||
|- | |- | ||
! scope=row| Permanent medias | |||
| | |||
* AZ MiR 701 (29cps) resist | * AZ MiR 701 (29cps) resist | ||
* AZ nLOF 2020 resist | * AZ nLOF 2020 resist | ||
* AZ 5214E resist | * AZ 5214E resist | ||
* PGMEA solvent for backside rinse and spinner bowl cleaning | * PGMEA solvent for backside rinse and spinner bowl cleaning | ||
| | |||
* DUV42S-6 (BARC) | * DUV42S-6 (BARC) | ||
* KRF M230Y resist | * KRF M230Y resist | ||
* KRF M35G resist | * KRF M35G resist | ||
* PGMEA solvent for edge bead removal and backside rinse | |||
| | |||
* AR-P 6200.09 (CSAR) for 2", 4", and 6" | * AR-P 6200.09 (CSAR) for 2", 4", and 6" | ||
* AZ5214E for 2", 4", and 6" | * AZ5214E for 2", 4", and 6" | ||
| Line 106: | Line 112: | ||
* AZ4562 for 4", and 6" | * AZ4562 for 4", and 6" | ||
* PGMEA solvent for edge bead removal, backside rinse, and spinner bowl cleaning | * PGMEA solvent for edge bead removal, backside rinse, and spinner bowl cleaning | ||
| | |||
No permanent media | No permanent media | ||
|colspan="2"| Only manual dispense | |||
| Only manual dispense | |||
| No permanent media | |||
|- | |- | ||
! scope=row| Manual dispense option | |||
| | |||
* No manual dispense | |||
* | * Syringe dispense (60cc) of PGMEA-based resist | ||
* | | | ||
* No manual dispense | |||
* | * Syringe dispense (60cc) of PGMEA and anisole-based resist | ||
* | | | ||
* No manual dispense | |||
* | * Syringe dispense (30cc) of PGMEA and anisole-based resist (2" only) | ||
* | | Only manual dispense | ||
| | |colspan="2"| Only manual dispense | ||
| Only manual dispense | |||
| Two syringe pumps | |||
|colspan="2 | |||
| | |||
Two syringe pumps | |||
|- | |- | ||
! scope=row| Spindle speed | |||
! | | 10 - 6000 rpm | ||
| 10 - 6000 rpm | |||
| | | 10 - 6000 rpm | ||
10 - 6000 rpm | | 10 - 5000 rpm (3000 rpm with non-vacuum chuck) | ||
| | |colspan="2"| 100 - 8000 rpm (3000 rpm with edge handling chuck) | ||
10 - 6000 rpm | | 100 - 8000 rpm | ||
| | | NA | ||
10 - 6000 rpm | |||
| | |||
10 - 5000 rpm (3000 rpm with non-vacuum chuck) | |||
|colspan="2 | |||
100 - | |||
| | |||
|- | |- | ||
! scope=row| Gyrset | |||
| No | |||
| | | No | ||
| No | |||
| | | Optional (max. speed 3000 rpm) | ||
|colspan="2"| No | |||
| | | No | ||
| NA | |||
| | |||
|colspan="2 | |||
| | |||
|- | |- | ||
! scope=row| Substrate size | |||
! | | | ||
*50 mm wafers (tool change required) | *50 mm wafers (tool change required) | ||
*100 mm wafers | *100 mm wafers | ||
*150 mm wafers | *150 mm wafers | ||
*200 mm wafers (tool change required) | *200 mm wafers (tool change required) | ||
| | |||
*100 mm wafers | *100 mm wafers | ||
*150 mm wafers | *150 mm wafers | ||
*200 mm wafers (may require tool change) | *200 mm wafers (may require tool change) | ||
| | |||
*2" or 50 mm wafers | *2" or 50 mm wafers | ||
*100 mm wafers | *100 mm wafers | ||
*150 mm wafers | *150 mm wafers | ||
| | |||
*100 mm wafer | *100 mm wafer | ||
*150 mm wafer | *150 mm wafer | ||
|colspan="2 | |colspan="2"| | ||
*50 mm wafers | *50 mm wafers | ||
*100 mm wafers | *100 mm wafers | ||
*150 mm wafer | *150 mm wafer | ||
*small pieces down to | *small pieces down to 5x5 mm2 | ||
| | | | ||
*100 mm wafers | |||
*150 mm wafer | |||
*small pieces down to 5x5 mm2 | |||
| | |||
Any sample(s) that fit inside machine | Any sample(s) that fit inside machine | ||
|- | |- | ||
! scope=row| Batch size | |||
| 1 - 25 | |||
| | | 1 - 25 | ||
1 - 25 | | 1 - 25 | ||
| | | 1 | ||
1 - 25 | |colspan="2"| 1 | ||
| | | 1 | ||
1 - 25 | | 1 | ||
| | |||
1 | |||
|colspan="2 | |||
1 | |||
| | |||
1 | |||
|- | |- | ||
! scope=row| Allowed substrate materials | |||
| | |||
*Silicon | *Silicon | ||
*Glass | *Glass | ||
'''No resist or crystalbond allowed in the HMDS module''' | '''No resist or crystalbond allowed in the HMDS module''' | ||
| | |||
*Silicon | *Silicon | ||
*Glass | *Glass | ||
| | |||
*Silicon | *Silicon | ||
*III-V materials | *III-V materials | ||
| Line 217: | Line 204: | ||
'''No resist or crystalbond allowed in the HMDS module''' | '''No resist or crystalbond allowed in the HMDS module''' | ||
| | |||
All cleanroom materials except III-V materials | All cleanroom materials except III-V materials | ||
|colspan="2 | |colspan="2"| | ||
*Silicon | *Silicon | ||
*III-V materials | *III-V materials | ||
*Glass | *Glass | ||
| | | | ||
All PolyFabLab materials | |||
| | |||
*All chemicals to be spray coated must be approved specifically for spray coating | *All chemicals to be spray coated must be approved specifically for spray coating | ||
*Any non-toxic, non-particulate and non-crosslinking material is likely to be approved | *Any non-toxic, non-particulate and non-crosslinking material is likely to be approved | ||
|- | |- | ||
|} | |} | ||
=Spin coating= | =Spin coating= | ||
The typical spin coating process consists of the following steps: | The typical spin coating process consists of the following steps: | ||
#Priming (typically HMDS) | #Priming (typically HMDS) followed by cooling to room temperature | ||
#Resist dispense (static or dynamic) | #Resist dispense (rotation: static or dynamic rotation)(arm: stationary or moving) | ||
#*Optional: Acceleration to a low spin speed if dynamic dispense is used | #*Optional: Acceleration to a low spin speed if dynamic dispense is used | ||
#*Optional: Resist spreading at low spin speed | #*Optional: Resist spreading at low spin speed for spreading thicker resists | ||
#Spin-off | #Spin-off | ||
#Backside rinse (typically during spin-off) | #Backside rinse (typically during spin-off) | ||
#Optional: Edge-bead removal | #Optional: Edge-bead removal | ||
#Softbake (contact or proximity) | #Softbake (contact or proximity) | ||
#Cooling to room temperature | |||
After priming, the wafer is cooled to room temperature and then transferred to the spin coater. If static dispense is used, the wafer is not rotating during the resist dispense. In the case of dynamic dispense, the wafer rotates at low spin speed during the dispense. The dispense arm is normally stationary during dispense, but some substrates may require the arm to move slowly across the substrate area while dispensing. Moving arm dispensing is usually only done with a rotating substrate. | |||
Using too high spin speed during dispense can cause surface wetting issues, while a too low spin speed causes the resist to flow onto the backside of the wafer. After dispense, a short spin at low spin speed may be used in order to spread the resist over the wafer surface before spin-off. | |||
==Spin-off== | ==Spin-off== | ||
| Line 282: | Line 272: | ||
==Softbake== | ==Softbake== | ||
After spin coating, the solvent in the resist must be evaporated in a baking step, in order to solidify the resist. This softbake can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface, either in direct contact on | After spin coating, the solvent in the resist must be evaporated in a baking step, in order to solidify the resist. This softbake can be carried out as a contact bake or a proximity bake. In a contact bake, the wafer is held in close contact to the hotplate surface, either in direct contact on the manual hotlpates or by resting on shallow bumps 150 µm above the hotplate in the Gamma tools. In a proximity bake, the wafer is first moved into proximity, e.g. 1mm, of the hotplate surface, then held there (on the lift pins) for the duration of the bake. | ||
= | =Decommisioned tools= | ||
<span style="color:red">The spin track was decommissioned 2018-02-01.</span> | <span style="color:red">The spin track was decommissioned 2018-02-01.</span> | ||
[[Specific Process Knowledge/Lithography/Coaters/Spin_Track_1_%2B_2_processing|Information about decommissioned tool can be found here.]] | [[Specific Process Knowledge/Lithography/Coaters/Spin_Track_1_%2B_2_processing|Information about decommissioned tool can be found here.]] | ||