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| The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches. | | The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches. |
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| In 2025 we tested the ion source again for SiO<sub>2</sub> using the standard recipe called "ion_etch_Stephen". We found very good agreement with our previous results:
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| The etch rate was 0.9 +/- 0.1 nm/min for one batch and 1.1 +/- 0.1 nm/min for a second batch (based on measurement of SiO2 layers before and after a total etch of 4 minutes to improve the ability to measure the difference with ellipsometry). Wafer-to-wafer variation was around 2 % within the same batch. Again the etch was strongest in the center with ~10-15 % higher etch rate in the center than at the edge of the wafer. So while the etch rate at the edge was 1 nm/min, the rate at the center was 1.1 nm/min more or less.
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| == Vacuum performance == | | == Vacuum performance == |
