Specific Process Knowledge/Etch/DRIE-Pegasus/processC: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/processC click here]'''
<!--Checked for updates on 14/5-2018 - ok/jmli -->
== Process C ==
{{contentbydryetch}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->
Process C is intended to be used on features in the sub 2-3 µm range. The recipe was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.
The 100 mm wafers had an Al mask made by lift-off:
# 80 nm of spin coated ZEP520A E-beam resist
# Patterned by E-beam lithography
# 20 nm Al deposited and patterned by lift-off
# ~ 99 % etch load
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process A specifications'''
|+ '''Process C specifications'''
|-
|-
! Parameter
! Parameter
Line 6: Line 22:
! Average result  
! Average result  
|-
|-
! Etch rate (µm/min)   
! Etch rate (nm/min)   
| > 15
| Not specified
| 18.9
|  
|-
|-
! Etched depth (µm)
! Etched depth (nm)
| 150
| 300
| 189.1
|  
|-
|-
! Scallop size (nm)
! Scallop size (nm)
| < 800
| < 30
| 718
|  
|-
|-
! Profile (degs)
! Profile (degs)
| 91 +/- 1
| 85 +/- 5
| 91.1
|  
|-
|-
! Selectivity to AZ photoresist
! Selectivity to resist
| > 150
| Not specified
| 310
|  
|-
|-
! Undercut (µm)
! Undercut (nm)
| <1.5
| < 30
| 0.84
|  
|-
|-
! Uniformity (%)
! Uniformity (%)
| < 3.5
| < 3.5
| 3.0
|  
|-
|-
! Repeatability (%)
! Repeatability (%)
| <4
| <4
| 0.43
|  
|-
|-
|}
|}
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{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process A recipe'''
|+ '''Process C recipe'''
|-
!
! colspan="2" | Step 1
! colspan="2" | Step 2
|-
|-
! width="120" | Parameter   
! width="120" | Parameter   
! width="120" | Etch
! width="120" | Etch
! width="120" | Dep
! width="120" | Etch
! width="120" | Dep
|-
|-
! Gas flow (sccm)  
! Gas flow (sccm)  
| SF<sub>6</sub> 350 (1.5 s) 550
| SF<sub>6</sub> 38 C<sub>4</sub>F<sub>8</sub> 70
| C<sub>4</sub>F<sub>8</sub> 200
| SF<sub>6</sub> 350 (1.5 s) 550
| C<sub>4</sub>F<sub>8</sub> 200
|-
|-
! Cycle time (secs)  
! Process time (mm:ss)  
| 7.0
| 01:30
| 4.0
| 7.0
| 4.0
|-
|-
! Pressure (mtorr)  
! Pressure (mtorr)  
| 25 (1.5 s) 90 >> 150
| 4
| 25
| 25 (1.5 s) 150
| 25
|-
|-
! Coil power (W)  
! Coil power (W)  
| 2800
| 450
| 2000
| 2800
| 2000
|-
|-
! Platen power (W)
! Platen power (W)
| 120 >> 140 (1.5) 45
| 100
| 0
| 140 (1.5) 45
| 0
|-
! Cycles 
| colspan="2" | 11 (keep fixed)
| colspan="2" | 44 (vary this)
|-
|-
! Common  
! Common  
| colspan="4" | Temperature 20 degs, HBC 10 torr, Short funnel, with baffle & 5mm spacers
| colspan="4" | Temperature 10 degsree, HBC 10 torr, long funnel, with baffle & 100 mm spacers
|}
|}
<gallery>
Image:c1 30 nm dots.jpg
Image:c1 50 nm dots 2.jpg
Image:r1 300 nm dots 1.jpg
</gallery>

Latest revision as of 12:02, 28 June 2023

Feedback to this page: click here

Process C

Unless otherwise stated, the content of this page was created by the dry etch group at DTU Nanolab

Process C is intended to be used on features in the sub 2-3 µm range. The recipe was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %.

The 100 mm wafers had an Al mask made by lift-off:

  1. 80 nm of spin coated ZEP520A E-beam resist
  2. Patterned by E-beam lithography
  3. 20 nm Al deposited and patterned by lift-off
  4. ~ 99 % etch load


Process C specifications
Parameter Specification Average result
Etch rate (nm/min) Not specified
Etched depth (nm) 300
Scallop size (nm) < 30
Profile (degs) 85 +/- 5
Selectivity to resist Not specified
Undercut (nm) < 30
Uniformity (%) < 3.5
Repeatability (%) <4



Process C recipe
Parameter Etch
Gas flow (sccm) SF6 38 C4F8 70
Process time (mm:ss) 01:30
Pressure (mtorr) 4
Coil power (W) 450
Platen power (W) 100
Common Temperature 10 degsree, HBC 10 torr, long funnel, with baffle & 100 mm spacers
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