Specific Process Knowledge/Bonding: Difference between revisions
New page: == Choose bonding methode == *Eutectic bonding *Fusion bonding |
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*Eutectic bonding | '''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Bonding click here]''' | ||
*Fusion bonding | <BR> | ||
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==Bonding== | |||
For bonding samples to a carrier wafer in order to enable '''dry etching''', please go [[Specific_Process_Knowledge/Etch/DryEtchProcessing/Bonding|here]]. | |||
For bonding samples to a carrier wafer for '''UV-lithography''' using automatic coater and developer, please see this process flow: [[media:Process_Flow_ChipOnCarrier.docx|Process_Flow_ChipOnCarrier.docx]], and refer to the [[Specific_Process_Knowledge/Etch/DryEtchProcessing/Bonding#Bonding|bonding procedure]] for dry etching. | |||
== Choose equipment == | |||
*[[/Imprinter 02|Imprinter 02]] | |||
*[[/Wafer Bonder 02|Wafer Bonder 02]] | |||
*[[Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace|C3 furnace anneal bond]] | |||
== Choose bonding methods in Wafer Bonder 2 == | |||
*[[/Eutectic bonding|Eutectic bonding]] | |||
*[[/Fusion bonding|Fusion bonding]] | |||
*[[/Anodic bonding|Anodic bonding]] | |||
== Comparing the three bonding methods in the wafer bonder 2 == | |||
{| border="2" cellspacing="0" cellpadding="2" | |||
|-style="background:silver; color:black" | |||
! | |||
![[/Eutectic bonding|Eutectic bonding]] | |||
![[/Fusion bonding|Fusion bonding]] | |||
![[/Anodic bonding|Anodic bonding]] | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!General description | |||
|For bonding two substrates by use of an interphase that makes an eutecticum. | |||
|For bonding two identical materials. | |||
|For bonding Si and Glass. | |||
|- | |||
|-style="background:silver; color:black" | |||
!Bonding temperature | |||
|Depending on the eutecticum 310°C to 400°C. | |||
|Depending on defects 50°C to 400°C. | |||
|Depending on the voltage 300°C to 500°C Standard is 400°C. | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Annealing temperature | |||
|No annealing | |||
|1000°C-1100°C in the anneal bond furnace (C3). | |||
|No annealing | |||
|- | |||
|-style="background:silver; color:black" | |||
!Materials possible to bond | |||
|Bonding of substrates is done by use of the eutectica Au/Si, Au/Sn and Au/Sn/Ni | |||
|Si/Si, SiO2/SiO2 | |||
|Si/Pyrex (glass) | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Substrate size | |||
|Up to 4" | |||
|Up to 4" | |||
|Up to 4" | |||
|- | |||
|-style="background:silver; color:black" | |||
!Cleaning | |||
|Cleaning by N2. | |||
|Wet chemical cleaning, [[Specific Process Knowledge/Wafer cleaning/IMEC|IMEC]]. | |||
|Cleaning by N2. | |||
|- | |||
|-style="background:WhiteSmoke; color:black" | |||
!Backside alignment | |||
|Double side polished wafers. | |||
|Double side polished wafers. | |||
|Not relevant. | |||
|- | |||
<br clear="all" /> | |||