Specific Process Knowledge/Thin film deposition/Temescal/Acceptance Test: Difference between revisions
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== Ion source == | == Ion source == | ||
We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub>. The etch rate | We achieved an etch rate of up to 1 nm/min for SiO<sub>2</sub> at the acceptance test in 2028. The etch rate was strongest in the center, about 15-20% higher than at the edges of a 6" wafer. | ||
The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches. | The reproducibility was quite good with less than 3% variation wafer-to-wafer within a batch and less than 10 % variation between two identical batches. | ||