Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8"): Difference between revisions
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Oxidation: | Oxidation: | ||
*Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub> | *Dry oxidation using O<sub>2</sub>. Reaction: Si + O<sub>2</sub> -> SiO<sub>2</sub> | ||
*Wet oxidation using steam | *Wet oxidation using water vapour/steam. Reaction: Si + 2H<sub>2</sub>O -> SiO<sub>2</sub> + 2H<sub>2</sub>(g). The steam is generated by a Bronkhorst steamer injection system. | ||
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!style="background:silver; color:black" align="center"|Performance | !style="background:silver; color:black" align="center"|Performance | ||
|style="background:LightGrey; color:black"|Film thickness | |style="background:LightGrey; color:black"|Film thickness and quality | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*Dry oxide: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | *Dry oxide: ~ 0 nm to 300 nm (it takes too long to grow thicker dry oxide layers) | ||
*Wet oxide: ~ 0 nm to 3 µm (~23 hours wet oxidation at 1100 <sup>o</sup>C) | *Wet oxide: ~ 0 nm to 3 µm (~23 hours wet oxidation at 1100 <sup>o</sup>C) | ||
* [[Specific Process Knowledge/Thermal Process/Oxidation/Breakdown voltage measurements/E1 furnace break-down voltage measurement results|Break-down voltage measurement results]] | |||
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!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameter range | ||
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*N<sub>2</sub>: 0 - 30 slm | *N<sub>2</sub>: 0 - 30 slm | ||
*O<sub>2</sub>: 0 - 30 slm | *O<sub>2</sub>: 0 - 30 slm | ||
*Steamer flow : 0 - 12.5 slm (9.5 slm in standard recipes) | *Steamer flow: 0 - 12.5 slm (9.5 slm in standard recipes) | ||
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!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Substrates | ||
|style="background:LightGrey; color:black"|Batch size | |style="background:LightGrey; color:black"|Batch size | ||
|style="background:WhiteSmoke; color:black"| | |style="background:WhiteSmoke; color:black"| | ||
*(1 - 50 | *(100 mm wafers - 1-50 wafers) | ||
*1 - 50 | *150 mm wafers - 1-50 wafers | ||
*1 - 25 | *200 mm wafers - 1-25 wafers | ||
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| style="background:LightGrey; color:black"|Substrate materials allowed | | style="background:LightGrey; color:black"|Substrate materials allowed | ||