Specific Process Knowledge/Thermal Process/E1 Furnace Oxidation (8"): Difference between revisions

[[Image:E1_furnace.JPG|thumb|300x300px|Oxidation (8") furnace (E1). Positioned in cleanroom E-6.''Photo: DTU Nanolab internal'']]

Both 150 mm and 200 mm wafers can be processed in the furnace. 100 mm wafers can also be processed in the furnace, but they should normally go in one of the other furnaces in the cleanroom instead. To switch between different wafer sizes, the furnace responsible persons will have to switch the quartz boats in the furnace.

The Oxidation (8") furnace is the top furnace tube in the furnace E-stack, which positioned in cleanroom E-6. New silicon wafers bought from DTU Nanolab can go directly into the furnace. Wafers from the A-stack furnaces, the C1 furnace, the LPCVD furnaces (B- and other E-stack furnaces) and from PECVD4 (not III-V materials) can also go directly into the furnace. All processed wafers have to be RCA cleaned, before they enter the furnace. Please check the cross contamination information in LabManager, before you use the furnace.  

Oxygen is using as oxidant for dry oxidation, and for wet oxidation wafer vapour generated by a Bronkhorst steamer is used as oxidant. The oxidation recipes on the furnace are named e.g. "WET1000" and "DRY1000", where "WET" or "DRY" indicates whether it is a wet or dry oxidation process, and the number indicates the oxidation temperature.  

*Oxidation of 150 mm and 200 mm wafers

*Annealing of 150 mm and 200 mm wafers

*Dry oxidation using O₂  

*Wet oxidation using DI water steam injection system (Bronkhorst)

|style="background:LightGrey; color:black"|Film thickness

*Dry SiO₂: ~ 0 nm  to 300 nm (it takes too long to grow a thicker dry oxide layers)

*Wet SiO₂: ~ 0 nm to 3 µm (23 hours wet oxidation at 1100 ^oC)

*800 - 1100 ^oC

*Steamer flow : 0 - 12.5 slm (9.5 slm in standard recipes)  

*1 - 50 150 mm wafers  

*1 - 50 200 mm wafers