Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride: Difference between revisions
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Tungsten nitride (WNₓ, commonly W₂N or δ‑WN) is a refractory ceramic that combines very high melting temperature, extreme hardness, chemical inertness, and good electrical conductivity in a composition‑tunable, CMOS‑compatible matrix. | Tungsten nitride (WNₓ, commonly W₂N or δ‑WN) is a refractory ceramic that combines very high melting temperature, extreme hardness, chemical inertness, and good electrical conductivity in a composition‑tunable, CMOS‑compatible matrix. | ||
Thin films are produced chiefly by reactive magnetron | Thin films are produced chiefly by reactive magnetron sputtering, where nitrogen flow and substrate temperature set stoichiometry and phase, yielding dense layers with controllable resistivity and stress. | ||
In semiconductor process flows, WNₓ acts as a robust Cu diffusion barrier/liner, hard mask, gate or contact material, and precision thin‑film resistor; its high absorption coefficient also makes it the standard absorber layer in EUV lithography photomasks and a candidate for x‑ray mask blanks. | In semiconductor process flows, WNₓ acts as a robust Cu diffusion barrier/liner, hard mask, gate or contact material, and precision thin‑film resistor; its high absorption coefficient also makes it the standard absorber layer in EUV lithography photomasks and a candidate for x‑ray mask blanks. | ||
Optically, WN-based stacks offer durable, high-temperature plasmonic and thermally emissive coatings, mid-IR absorbers, and multilayer structures for soft-x-ray mirrors and synchrotron beamline optics, delivering stability far beyond noble metals under extreme photon flux. | Optically, WN-based stacks offer durable, high-temperature plasmonic and thermally emissive coatings, mid-IR absorbers, and multilayer structures for soft-x-ray mirrors and synchrotron beamline optics, delivering stability far beyond noble metals under extreme photon flux. | ||
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Deposition of WN<sub>x</sub> can only be done by reactive sputtering using W target. | Deposition of WN<sub>x</sub> can only be done by reactive sputtering using W target. | ||
The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the | The tool of choice for this application is the Cluster-based multi-chamber high vacuum sputtering deposition system, commonly referred to as the "[[Specific Process Knowledge/Thin film deposition/Cluster-based multi-chamber high vacuum sputtering deposition system|Cluster Lesker]]." The operating process is described in detail.: | ||
* [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target) | * [[Specific Process Knowledge/Thin film deposition/Deposition of Tungsten Nitride/WN Reactive Sputtering in Cluster Lesker PC3|Deposition of Tungsten Nitride (WN) using reactive sputtering]] in Sputter-System Metal-Nitride(PC3) Source 2 (3-inch target) | ||
At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 or PC1. | At the moment (July 2025) we have a 3-inch W target (0.125" thick, bonded to Cu) for PC3 or PC1. | ||
==Comparison of sputter systems for reactive deposition== | ==Comparison of sputter systems for reactive deposition== | ||
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*Limited by process time. | *Limited by process time. | ||
*Deposition rate (0. | *Deposition rate (0.2 nm/s) is likely faster than Sputter-System (Lesker) | ||
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