Specific Process Knowledge/Thin film deposition/ALD Picosun R200: Difference between revisions
| (One intermediate revision by the same user not shown) | |||
| Line 35: | Line 35: | ||
== Process information == | == Process information == | ||
=== Recipes === | |||
*[[/Standard recipes on the ALD tool|Standard recipes on the ALD 1 tool]] | *[[/Standard recipes on the ALD tool|Standard recipes on the ALD 1 tool]] | ||
*[[/ALD multilayers|Advanced recipes involving fabrication of multilayers]] | *[[/ALD multilayers|Advanced recipes involving fabrication of multilayers]] | ||
=== Process details === | |||
*[[/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]] | *[[/Al2O3 deposition using ALD|Al<sub>2</sub>O<sub>3</sub> deposition using ALD 1]] | ||
*[[/TiO2 deposition using ALD|TiO<sub>2</sub> deposition using ALD 1]] | *[[/TiO2 deposition using ALD|TiO<sub>2</sub> deposition using ALD 1]] | ||
| Line 71: | Line 75: | ||
*TiO<sub>2</sub>: 0 - 100 nm | *TiO<sub>2</sub>: 0 - 100 nm | ||
*HfO<sub>2</sub>: 0 - 100 nm | *HfO<sub>2</sub>: 0 - 100 nm | ||
<i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. | <i>As the purpose of ALD 1 is to deposit very thin and uniform layers, the allowed deposition thickness is limited to 100 nm, and it is not allowed to do more depositions on the same sample(s) to deposit thicker layers than 100 nm. The deposition of thicker layers is not allowed, as this would occupy the machine for an extended period, thereby reducing its availability to fewer users. Long depositions also cause issues, and with flakes and particles, this means that the chamber and the pump line will need to be cleaned or replaced quite often. Furthermore, the delivery time on precursors is usually quite long. When creating a sample design, it is advisable to avoid steps that require depositing thicker layers than 100 nm using ALD. Alternatively, consider whether the same material can be deposited using other machines in the cleanroom.</i> | ||
|- | |- | ||
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Process parameter range | ||