Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride: Difference between revisions
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Thin films of Titanium Nitride (TiN) can be deposited by either [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD]] or reactive sputtering. If sputtering is used, the target is titanium (Ti), and nitrogen (N<sub>2</sub>) is added as a reactive gas to the chamber, resulting in the formation of Titanium Nitride on the sample. The process information is available below: | Thin films of Titanium Nitride (TiN) can be deposited by either [[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)|ALD]] or reactive sputtering. If sputtering is used, the target is titanium (Ti), and nitrogen (N<sub>2</sub>) is added as a reactive gas to the chamber, resulting in the formation of Titanium Nitride on the sample. The process information is available below: | ||
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|TiN deposition using ALD]]. | *[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN deposition using ALD2|TiN deposition using thermal ALD]]. | ||
*[[Specific Process Knowledge/Thin film deposition/ALD2 (PEALD)/TiN plasma deposition using ALD2|TiN deposition using plasma ALD]]. | |||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Lesker sputter tool|TiN deposition with reactive sputtering using Lesker sputter tool]]. | *[[Specific Process Knowledge/Thin film deposition/Deposition of Titanium Nitride/Deposition of Titanium Nitride using Lesker sputter tool|TiN deposition with reactive sputtering using Lesker sputter tool]]. | ||