Specific Process Knowledge/Thin film deposition/Deposition of Aluminium Nitride: Difference between revisions

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+=Aluminium Nitride (AlN)=
+Aluminum nitride (AlN) is a wide‑bandgap (~6.2 eV) ceramic that pairs very high thermal conductivity (> 200 W m<sup>-1</sup>K<sup>-1</sup> ), strong piezoelectric and acoustic properties, and a high dielectric breakdown field in a chemically inert, CMOS‑compatible matrix.
+It is deposited by reactive magnetron sputtering for dense, c-axis-oriented films widely used in RF devices, and by atomic layer deposition (ALD) when conformal, thickness-precise coatings are required on high-aspect-ratio or temperature-sensitive structures.
+In semiconductor technology, AlN acts as a nucleation or buffer layer for GaN power/high‑frequency devices, a robust passivation and diffusion barrier, and—when alloyed with Sc—to form ferroelectric AlScN for next‑generation non‑volatile FeFETs and piezoelectric MEMS actuators.
+Optically, its transparency from deep-UV to the IR and modest refractive index (~2.1) enable low-loss waveguides, UV LEDs/lasers, and protective or anti-reflective coatings that withstand high optical power and harsh environments.
+AlN’s strong piezoelectricity and high acoustic velocity underpin surface‑ and bulk‑acoustic‑wave filters, film bulk‑acoustic‑resonators, energy harvesters, and high‑Q MEMS resonators used in 5G RF front‑ends and timing devices.
+Beyond electronics and photonics, AlN substrates and thin films offer excellent thermal management for power modules, high-temperature, biocompatible passivation layers for sensors and implants, and mechanically robust coatings for corrosion and wear resistance, thereby cementing its role as a versatile thin-film material across semiconductor, optical, and engineering applications.
 = Deposition of Aluminium Nitride =