Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch: Difference between revisions
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'''With DUV mask on ~300 nm SRN layer''' | '''With DUV mask on ~300 nm SRN layer''' | ||
[[File:SRN_slowetch_profilealong center.png|800px|left|thumb|Process: ''Slowetch recipe for 10 mins'', DUV mask ~750 nm, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | [[File:SRN_slowetch_profilealong center.png|800px|left|thumb|Process: ''Slowetch recipe for 10 mins'', DUV mask (with Barc) ~750 nm, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | ||
Note: The SEM images illustrate the etched SRN profiles across the wafer, progressing from one edge (left) through the center chip (middle) to the opposite edge (right).]] | Note: The SEM images illustrate the etched SRN profiles across the wafer, progressing from one edge (left) through the center chip (middle) to the opposite edge (right), the etch rate is ~28 nm/min.]] | ||