Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Silicon Nitride Etch: Difference between revisions
No edit summary |
No edit summary |
||
| (3 intermediate revisions by the same user not shown) | |||
| Line 45: | Line 45: | ||
|- | |- | ||
|} | |} | ||
====Etch rate & uniformity==== | ====Etch rate & uniformity==== | ||
'''Recipe: ''Slowetch 2''''' | |||
'''SRN (LPCVD) etch uniformity on 6″ wafer | '''SRN (LPCVD) etch uniformity on 6″ wafer''' | ||
[[File:slowetch2_100% loadSRN.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]] | [[File:slowetch2_100% loadSRN.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)]] | ||
[[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The 4 wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]] | [[File:slowetch2_100% loadSRN_etchrate.png|400px|left|thumb|Note: etch rate for SRN with Slowetch 2. The 4 wafers were processed on 4 different days, the variation suggests process instability or chamber memory effects influencing etch behavior across runs.]] | ||
| Line 83: | Line 83: | ||
<br clear="all" /> | <br clear="all" /> | ||
'''SRN (LPCVD) etch uniformity on 6″ wafer | |||
'''Recipe: ''Slowetch''''' | |||
'''SRN (LPCVD) etch uniformity on 6″ wafer ''' | |||
[[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | [[File:SRN_slowetch_data_100%load.png|400px|left|thumb|Process: No mask, 100 % load, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | ||
| Line 89: | Line 92: | ||
<br clear="all" /> | |||
'''With DUV mask on ~300 nm SRN layer''' | |||
[[File:SRN_slowetch_profilealong center.png|800px|left|thumb|Process: ''Slowetch recipe for 10 mins'', DUV mask (with Barc) ~750 nm, etching was done after 10 mins chamber clean + 5 mins TDESC clean (for all wafers)<br/> | |||
Note: The SEM images illustrate the etched SRN profiles across the wafer, progressing from one edge (left) through the center chip (middle) to the opposite edge (right), the etch rate is ~28 nm/min.]] | |||