Specific Process Knowledge/Thin film deposition/Deposition of Silicon: Difference between revisions
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==Deposition of Silicon using e-beam evaporation== | ==Deposition of Silicon using e-beam evaporation== | ||
It is possible to e-beam evaporate silicon at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]]. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer. | It is possible to e-beam evaporate silicon at Nanolab using the [[Specific Process Knowledge/Thin film deposition/10-pocket e-beam evaporator|E-beam evaporator (10-pockets)]], where the substrate can be heated up to 250 °C. As with sputtering you can deposit on almost any material. In e-beam evaporation the deposition is line-of-sight and will be suitable for lift-off. However for 8" wafers the system is not optimized for lift-off on the full diameter of the wafer. | ||
* [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si evaporation in E-beam evaporator Temescal-2|Si evaporation in E-beam evaporator (10-pockets)]] | * [[Specific Process Knowledge/Thin film deposition/Deposition of Silicon/Si evaporation in E-beam evaporator Temescal-2|Si evaporation in E-beam evaporator (10-pockets)]] | ||
==Comparison of the methods for deposition of Silicon== | ==Comparison of the methods for deposition of Silicon== | ||
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|few nm to >200 nm | |few nm to >200 nm | ||
|few nm to ? | |few nm to ? | ||
|few nm to | |few nm to 600 nm | ||
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