Specific Process Knowledge/Thin film deposition/thermalevaporator: Difference between revisions

← Older edit

VisualWikitext

@@ Line 1: / Line 1: @@
-'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/thermalevaporator click here]'''
+'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Thin_film_deposition/thermalevaporator click here]'''
-<i> Unless otherwise stated, this page is written by <b>DTU Nanolab internal</b></i>
+<i> This page is written by <b>DTU Nanolab staff</b></i>
 [[Category: Equipment|Thin film]]
@@ Line 7: / Line 7: @@
-==Thermal evaporator- A system for deposition of metals==
+==Thermal evaporator for metal deposition==
 [[Image:IMG_2592_edit.jpg|300x300px|thumb| Positioned in cleanroom A-1.]]
-The main purpose of the thermal evaporator is to deposit Al for removing charging of the resist when doing EBL on isolating substrate. It can also be used for Cr evaporation for the same purpose, and for evaporation of Ag, Au, Cu, and Ge. We have also attempted to evaporate Zn, but this resulted in heavy contamination of the chamber that required a lot of effort to clean and the process was not stable. If you would like to deposit other metals you are welcome to ask.
+This instrument is NANO 36 Thermal evaporator from Kurt J. Lesker. Instrument specifications below. It takes around 1 hour for a round of deposition (depending on thickness and rate of course). The small chamber means that the deposited thickness may vary quite a bit across large samples, as further described in the specifications table.
-'''The user manual, APV, technical information and contact information can be found in LabManager:'''
+The main purpose of this evaporator is to deposit Al for dissipation of charge when doing electron beam lithography on insulating substrates. It can also be used for Cr evaporation for the same purpose. The advantage of Al is that it can be removed simultaneously with the e-beam resist. However Cr may allow even better resolution of the lithography.
+Additionally we have processes for evaporation of Ag, Au, Cu, and Ge. We have also attempted to evaporate Zn, but this resulted in heavy contamination of the chamber. You are always welcome to ask for other metals in the machine.
+Up to two sources can be present at the same time (metals in a boat, crucible or rod for evaporation) but there is only one power supply, so only one material can be evaporated at a time.
+'''The user manual, APV, technical information, cross-contamination sheet and contact information can be found in LabManager:'''
 <!-- remember to remove the type of documents that are not present -->
@@ Line 24: / Line 30: @@
 *[[Specific Process Knowledge/Thin film deposition/Deposition of Aluminium/Thermal deposition of Al|Aluminium]]
-*[[Specific Process Knowledge/Thin film deposition/Deposition of Silver|Silver]]
+*[[Specific Process Knowledge/Thin film deposition/Deposition of Silver/Deposition of Silver in Thermal Evaporator|Silver]]
 *[[Specific Process Knowledge/Thin film deposition/Deposition of Chromium/Thermal evaporation of Cr in Thermal evaporator|Chromium]]
 *[[Specific Process Knowledge/Thin film deposition/Deposition of Germanium/Thermal Ge evaporation Thermal Evaporator|Germanium]]
@@ Line 31: / Line 37: @@
 *([[Specific Process Knowledge/Thin film deposition/Deposition of Zinc|Zinc]] - we don't like to evaporate this material)
-We can also evaporate gold in this evaporator and can develop processes for other materials if requested.
+We can develop processes for other materials if requested.
 ==Equipment performance and process related parameters==
@@ Line 41: / Line 47: @@
 *Thermal evaporation of metals
 |-
-!style="background:silver; color:black" align="left" valign="top" rowspan="4"|Performance
+!style="background:silver; color:black" align="left" valign="top" rowspan="5"|Performance
 |style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"|
-*10Å - 1µm (Al and Ag)
+*10Å - 1µm (Al)
-*up to 80 nm (Cr)
+*10Å - 0.5µm (Ag)
+*up to 100 nm (Cr)
+*ask the [mailto:thinfilm@nanolab.dtu.dk Thin Film group] if in doubt or if you wish to exceed the limits
 |-
 |style="background:LightGrey; color:black"|Deposition rate
@@ Line 52: / Line 60: @@
 *We need to develop a new process for each rate
 |-
-|style="background:LightGrey; color:black"|Thickness uniformity
+|style="background:LightGrey; color:black"|Thickness uniformity ('''no rotation''', wafer centered above source)*
+|style="background:WhiteSmoke; color:black"|
+*Approx. 6-9 % variation on a 4" wafer with 100 nm Al (crucible source)
+*Approx. 8-13 % variation on a 6" wafer with 100 nm Al (crucible source)
+*Approx. 23 % variation on a 4" wafer with 100 nm Ag (boat source) - expect better result with rotation
+*Approx. 10 % variation on a 6" wafer with 100 nm Cr (rod source)
+|-
+|style="background:LightGrey; color:black"|Thickness uniformity ('''with rotation''')
 |style="background:WhiteSmoke; color:black"|
-*approx. 13 % variation on a 4" wafer with 100 nm Al *
+*Approx. 6-9 % Wafer-in-Wafer variation on 4" wafers with Al (crucible source) using 3-wafer holder (4 % variation wafer-to-wafer)
-*approx. 23 % variation on a 4" wafer with 100 nm Ag *
+*Approx. 6 % variation for 6" wafers with Al (crucible source) with wafer off-center on holder
-*approx. 10 % variation on a 6" wafer with 100 nm Cr *
+*Approx. 7 % variation for 6" wafers with Al (crucible source) with wafer centered on holder
 |-
 |style="background:LightGrey; color:black"|Pumpdown time
 |style="background:WhiteSmoke; color:black"|
-*about 15 min
+*about 15-25 min
 |-
 !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Process parameter range
@@ Line 74: / Line 90: @@
 |style="background:LightGrey; color:black"|Batch size
 |style="background:WhiteSmoke; color:black"|
-*Up to 8" wafer
+*Up to 1 x 6 " or 8" wafer
-*Or several smaller pieces
+*Up to 3 x 4" wafers
+*Many smaller pieces
 *Deposition on one side of the substrate
 |-
@@ Line 94: / Line 111: @@
 |-
 |}
-''*'' ''The variation is defined as (Max-Min)/Average for the various points measured on the wafer. The max. point was around the center and the min. somewhere along the edge. The exact location of the maximum thickness depends how the sample is placed relative to the point of maximum material flux. Measurement by Rebecca Ettlinger, Nov. 2018.''
+''*'' ''The variation is defined as (Max-Min)/Average for the various points measured on the wafer. The max. point was around the center and the min. somewhere along the edge. The exact location of the maximum thickness depends how the sample is placed relative to the point of maximum material flux.
+''Number for Al 4" no rotation based on QC measurements 2018-2023.
+''Other measurements by Rebecca Ettlinger, Evgeniy Shkondin and Patama Pholprasit 2018-2023''