Specific Process Knowledge/Etch/DRIE-Pegasus/processA: Difference between revisions
No edit summary |
|||
| (One intermediate revision by one other user not shown) | |||
| Line 2: | Line 2: | ||
<!--Checked for updates on 2/10-2020 - ok/jmli --> | <!--Checked for updates on 2/10-2020 - ok/jmli --> | ||
<!--Checked for updates on 28/6-2023 - ok/jmli --> | <!--Checked for updates on 28/6-2023 - ok/jmli --> | ||
<!--Checked for updates on 21/10-2025 - ok/jmli --> | |||
{{contentbydryetch}} | {{contentbydryetch}} | ||
| Line 342: | Line 344: | ||
</gallery> | </gallery> | ||
''Please note that without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform (batch C01548).'' | ''Please note that without pre-etch measurements of the thicknesses of the photoresist it is not possible to determine the resist etch rate. However, it looks very uniform (batch C01548).'' | ||
<br><br> | |||
<gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3"> | <gallery caption="Optical images of the C01549 batch that is processed 20:10 mins." widths="250" heights="200" perrow="3"> | ||
image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains. | image:C01549.01-A.jpg|Wafer C01549.01: 5 % exposed area. Some 190 nm of 600 nm oxide remains. | ||