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* CleWin
* CleWin
* KLayout (free)
* KLayout (free) link: https://www.klayout.de/
* L-Edit
* L-Edit
* Autocad
* Autocad


At Nanolab we offer all users '''free access to CleWin 6''' for their mask layout. You can find more information on how to Install [[Specific Process Knowledge/Pattern Design/CleWin|CleWin 6]] on your local computer [[Specific Process Knowledge/Pattern Design/CleWin|'''here''']].
At Nanolab we offer all users '''free access to CleWin 6''' for their mask layout. You can find more information on how to install CleWin 6 on your local computer [[Specific Process Knowledge/Pattern Design/CleWin|'''here''']].
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* For '''DUV-lithography''', a physical mask, called "reticles", is required. The file format must be GDS. For more details concerning the design of reticles see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Reticle_Design|Reticle Design]].
* For '''DUV-lithography''', a physical mask, called "reticles", is required. The file format must be GDS. For more details concerning the design of reticles see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Reticle_Design|Reticle Design]].
* For '''E-beam lithography''', you need to prepare a set of files (GDS, V30, sdf, jdf and mgn files). For more details, please see [[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#FilePreparation|File preparation]]. For details about how to make aligned E-beam patterns, please have at look at [[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#Design_of_global_marks_and_chip_marks|Design of global marks and chip marks]]
* For '''E-beam lithography''', you need to prepare a set of files (GDS, V30, sdf, jdf and mgn files). For more details, please see [[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#FilePreparation|File preparation]]. For details about how to make aligned E-beam patterns, please have at look at [[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#Design_of_global_marks_and_chip_marks|Design of global marks and chip marks]]
* For '''Laser Cutting''' using our [Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool], the layout file must be saved as DXF file.
* For '''Laser Cutting''' using our [[Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool]], the layout file must be saved as DXF file.
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*Maskless aligner:
*Maskless aligner:
**[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]]
**[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]]
**[[Media:MLA alignmentMarks arrows.gds|Alignment marks with structures to assist in locating the marks during alignment (.gds)]]
**[[Media:MLA_alignmentMarks_arrows.cif|Alignment marks with structures to assist in locating the marks during alignment (.cif)]]
**[[Media:AlignmentMark KOH.gds|Alignment mark for multiple layers, Layer 1 for etch in KOH (.gds)]]
**[[Media:AlignmentMark_KOH.cif|Alignment mark for multiple layers, Layer 1 for etch in KOH (.cif)]]
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===Alignment marks location===
===Alignment marks location===
For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]]  
For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]]  
*The mask's alignment marks for 4inch process:
**For Back Side Alignment (BSA) alignment marks must be located  between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and  exactly at 45mm in left and right in horizontal location (x=+-45mm).
**For Top Side Alignment (TSA) alignment marks must be located 35-45 mm in left and right in horizontal location and between -2 and +2 mm in vertical location.


*The mask's alignment marks for 6inch process:
*For Top Side Alignment (TSA) alignment marks should be located 35-80 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
**Both BSA and TSA must be located between -2,5 and +2,5 mm in vertical location from mask center and 60 mm in left and right in horizontal location.
*For Back Side Alignment (BSA) alignment marks should be located 15-45 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
**Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm.
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=== Alignment marks for E-beam lithography ===
=== Alignment marks for E-beam lithography ===
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ#Design_of_global_marks_and_chip_marks here].
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOLAlignment|to e-beam alignment here]]
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=== Helpful information for chip layout ===
=== Helpful information for chip layout ===
*[[Media:Gamma coater & developer chucks + hotplate pins.gds|Gamma coater & developer chucks + hotplate pins.gds]] Design file showing the size of the chucks and the position of the hotplate pins in the Gamma tools.
*[[Media:Gamma coater & developer chucks + hotplate pins.gds|Gamma coater & developer chucks + hotplate pins.gds]] Design file showing the size of the chucks and the position of the hotplate pins in the Gamma tools.
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