Specific Process Knowledge/Pattern Design: Difference between revisions

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 * CleWin
-* KLayout (free)
+* KLayout (free) link: https://www.klayout.de/
 * L-Edit
 * Autocad
-At Nanolab we offer all users '''free access to CleWin 6''' for their mask layout. You can find more information on how to Install [[Specific Process Knowledge/Pattern Design/CleWin|CleWin 6]] on your local computer [[Specific Process Knowledge/Pattern Design/CleWin|'''here''']].
+At Nanolab we offer all users '''free access to CleWin 6''' for their mask layout. You can find more information on how to install CleWin 6 on your local computer [[Specific Process Knowledge/Pattern Design/CleWin|'''here''']].
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 * For '''DUV-lithography''', a physical mask, called "reticles", is required. The file format must be GDS. For more details concerning the design of reticles see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Reticle_Design|Reticle Design]].
 * For '''E-beam lithography''', you need to prepare a set of files (GDS, V30, sdf, jdf and mgn files). For more details, please see [[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#FilePreparation|File preparation]]. For details about how to make aligned E-beam patterns, please have at look at [[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#Design_of_global_marks_and_chip_marks|Design of global marks and chip marks]]
-* For '''Laser Cutting''' using our [Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool], the layout file must be saved as DXF file.
+* For '''Laser Cutting''' using our [[Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool]], the layout file must be saved as DXF file.
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 *Maskless aligner:
 **[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]]
-**[[Media:MLA alignmentMarks arrows.gds|Alignment marks with structures to assist in locating the marks during alignment (.gds)]]
+**[[Media:MLA_alignmentMarks_arrows.cif|Alignment marks with structures to assist in locating the marks during alignment (.cif)]]
-**[[Media:AlignmentMark KOH.gds|Alignment mark for multiple layers, Layer 1 for etch in KOH (.gds)]]
+**[[Media:AlignmentMark_KOH.cif|Alignment mark for multiple layers, Layer 1 for etch in KOH (.cif)]]
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 ===Alignment marks location===
 For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]]
-*The mask's alignment marks for 4inch process:
-**For Back Side Alignment (BSA) alignment marks must be located  between -1,0 and +1,0 mm in vertical location from mask center (y=0-+1mm) and  exactly at 45mm in left and right in horizontal location (x=+-45mm).
-**For Top Side Alignment (TSA) alignment marks must be located 35-45 mm in left and right in horizontal location and between -2 and +2 mm in vertical location.
-*The mask's alignment marks for 6inch process:
+*For Top Side Alignment (TSA) alignment marks should be located 35-80 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
-**Both BSA and TSA must be located  between -2,5 and +2,5 mm in vertical location from mask center and 60 mm in left and right in horizontal location.
+*For Back Side Alignment (BSA) alignment marks should be located 15-45 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y)
-**Please notice that if you plan to use the automatic alignment option the alignment marks must be displaced from y=0 to y=+/- 1,6mm.
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 === Alignment marks for E-beam lithography ===
-If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/EBeamLithography/JEOL_JBX-9500FSZ#Design_of_global_marks_and_chip_marks here].
+If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOLAlignment|to e-beam alignment here]]
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 === Helpful information for chip layout ===
 *[[Media:Gamma coater & developer chucks + hotplate pins.gds|Gamma coater & developer chucks + hotplate pins.gds]] Design file showing the size of the chucks and the position of the hotplate pins in the Gamma tools.
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 == Mask Ordering and Fabrication ==
-Our standard mask supplier is [https://www.macdermidalpha.com/semiconductor-solutions/compugraphics Compugraphics]. They can provide 5" and 7" masks on soda lime glass or quartz. Minimum feature size can be 0.8µm, 1µm or 1.5µm which is reflected in the price. Read a short guide on[[Media:Mask Ordering Guide.pdf| how to order photomasks from Compugraphics]] here. Templates for the mask specifications for 5" and 7" masks respectively can be seen [[mask_spec| here.]]
+Our standard mask supplier is [https://www.macdermidalpha.com/semiconductor-solutions/compugraphics Compugraphics]. They can provide 5" and 7" masks on soda lime glass or quartz. Minimum feature size can be 0.8µm, 1µm or 1.5µm which is reflected in the price. Read a short guide on[[Media:Mask Ordering Guide.pdf| how to order photomasks from Compugraphics]] here. Templates for the mask specifications for 5" and 7" masks respectively can be seen [[/Mask Specifications| <b>here</b>.]]
 The masks have to be ordered in Procure. Nanolab cannot order the mask for you but we do offer a final check of the design and mask specifications before you place the order. You can find a guide on [[Media:Maskordering in Fusion.pdf| how to order and attach design files in procure]] here.