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*[[/ICP metal|Titanium Oxide etch using ICP metal]]
*[[/ICP metal|Titanium Oxide etch using ICP metal]]
*Titanium Oxide etch using BHF




==Comparison of Titanium Oxide (ALD) etch Methods [[Image:section under construction.jpg|70px]]==
==Comparison of Titanium Oxide (ALD) etch Methods ==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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!Generel description
!Generel description
|Wet etch of TiO2 (ALD)
|Wet etch of TiO2 (ALD)
|
|Dry etch of TiO2
|-
|-


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|2,5 nm/min
|2,5 nm/min
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*~30nm/min (pure Al)
*It has not been explored
*current recipe ~8 nm/min
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|-


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*Isotropic
*Isotropic
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*Isotropic
*Anisotropic
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|-


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*Any size (in beaker)
*Any size (in beaker)
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*Chips (6-60 mm)
*Samples < 150 mm wafers on carrier
*100 mm wafers  
*one 150 mm wafer at a time
*150 mm wafers
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|-


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*Any material
*Any material
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*Every thing that is allowed in the Developer: TMAH Manual
*silicon, silicon oxides and nitrides
*Al, Cr, Ti (incl. oxides and nitrides)
*Ta, W, Nb (incl. oxides and nitrides)
|-
|-
|}
|}
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