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*[[/ICP metal|Titanium Oxide etch using ICP metal]]
*[[/ICP metal|Titanium Oxide etch using ICP metal]]
*Titanium Oxide etch using BHF




==Comparison of Titanium Oxide (ALD) etch Methods [[Image:section under construction.jpg|70px]]==
==Comparison of Titanium Oxide (ALD) etch Methods ==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
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!BHF
!BHF
!ICP Metal Etcher
!ICP Metal Etcher
!
!
|-
|-


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!Generel description
!Generel description
|Wet etch of TiO2 (ALD)
|Wet etch of TiO2 (ALD)
|
|Dry etch of TiO2
|Dry plasma etch of Al
|Sputtering of Al - pure physical etch.
|-
|-


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|2,5 nm/min
|2,5 nm/min
|
|
*~30nm/min (pure Al)
*It has not been explored
|
*current recipe ~8 nm/min
*~350 nm/min (depending on features size and etch load)
|
*~30nm/min (not tested yet)
|-
|-


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*Isotropic
*Isotropic
|
|
*Isotropic
*Anisotropic
|
*Anisotropic (vertical sidewalls)
|
*Anisotropic (angles sidewalls, typical around 70 dg)
|-
|-


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*Any size (in beaker)
*Any size (in beaker)
|
|
*Chips (6-60 mm)
*Samples < 150 mm wafers on carrier
*100 mm wafers
*one 150 mm wafer at a time
*150 mm wafers
|
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (when set up to 100mm wafers)
*<nowiki>#</nowiki>1 150mm wafers (when set up to 150mm wafers)
|
Smaller pieces glued to carrier wafer
*<nowiki>#</nowiki>1 50mm wafer
*<nowiki>#</nowiki>1 100mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
|-
|-


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*Any material
*Any material
|
|
*Every thing that is allowed in the Developer: TMAH Manual
*silicon, silicon oxides and nitrides
|
*Al, Cr, Ti (incl. oxides and nitrides)
*Silicon
*Ta, W, Nb (incl. oxides and nitrides)
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,  
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
*Silicon
*Silicon oxides
*Silicon nitrides
*Metals from the +list
*Metals from the -list
*Alloys from the above list
*Stainless steel
*Glass
*III-V materials
*Resists
*Polymers
*Capton tape
|-
|-
|}
|}

Latest revision as of 14:23, 4 September 2025

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Etch of Titanium oxide has been test in the ICP metal etcher.


Comparison of Titanium Oxide (ALD) etch Methods

BHF ICP Metal Etcher
Generel description Wet etch of TiO2 (ALD) Dry etch of TiO2
Etch rate range 2,5 nm/min
  • It has not been explored
  • current recipe ~8 nm/min
Etch profile
  • Isotropic
  • Anisotropic
Substrate size
  • Any size (in beaker)
  • Samples < 150 mm wafers on carrier
  • one 150 mm wafer at a time
Allowed materials In beaker:
  • Any material
  • silicon, silicon oxides and nitrides
  • Al, Cr, Ti (incl. oxides and nitrides)
  • Ta, W, Nb (incl. oxides and nitrides)
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