Specific Process Knowledge/Pattern Design: Difference between revisions
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* CleWin | * CleWin | ||
* KLayout (free) | * KLayout (free) link: https://www.klayout.de/ | ||
* L-Edit | * L-Edit | ||
* Autocad | * Autocad | ||
At Nanolab we offer all users '''free access to CleWin 6''' for their mask layout. You can find more information on how to | At Nanolab we offer all users '''free access to CleWin 6''' for their mask layout. You can find more information on how to install CleWin 6 on your local computer [[Specific Process Knowledge/Pattern Design/CleWin|'''here''']]. | ||
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There are different file formats available and not all equipment can handle each of them. | There are different file formats available and not all equipment can handle each of them. | ||
* For '''UV-lithography''', you create a layout file with your design. The file format should preferably be CIF or GDS, though DXF, or GERBER is acceptable too. The electronic mask layout can be used directly in one of our [[Specific Process Knowledge/Lithography/UVExposure|Mask Less Aligners (MLAs)]] or you can have a physical mask produced based on the layout file for our [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|Mask Aligner]]. For more details see below [[Specific_Process_Knowledge/Pattern_Design#Mask_Ordering_and_Fabrication|Mask Fabrication for UV-lithography]]. | * For '''UV-lithography''', you create a layout file with your design. The file format should preferably be CIF or GDS, though DXF, or GERBER is acceptable too. The electronic mask layout can be used directly in one of our [[Specific Process Knowledge/Lithography/UVExposure|Mask Less Aligners (MLAs)]] or you can have a physical mask produced based on the layout file for our [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|Mask Aligner]]. For more details see below [[Specific_Process_Knowledge/Pattern_Design#Mask_Ordering_and_Fabrication|Mask Fabrication for UV-lithography]]. | ||
* For '''DUV-lithography''', a physical mask, called "reticles", is required. The file format must be GDS. For more details concerning the design of reticles see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography | * For '''DUV-lithography''', a physical mask, called "reticles", is required. The file format must be GDS. For more details concerning the design of reticles see [[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Reticle_Design|Reticle Design]]. | ||
* For '''E-beam lithography''', you need to prepare a set of files (GDS, V30, sdf, jdf and mgn files). For more details, please see [[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#FilePreparation|File preparation]]. For details about how to make aligned E-beam patterns, please have at look at [[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#Design_of_global_marks_and_chip_marks|Design of global marks and chip marks]] | * For '''E-beam lithography''', you need to prepare a set of files (GDS, V30, sdf, jdf and mgn files). For more details, please see [[Specific_Process_Knowledge/Lithography/EBeamLithography/FilePreparation#FilePreparation|File preparation]]. For details about how to make aligned E-beam patterns, please have at look at [[Specific_Process_Knowledge/Lithography/EBeamLithography/JBX9500Manual#Design_of_global_marks_and_chip_marks|Design of global marks and chip marks]] | ||
* For '''Laser Cutting''' using our [Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool], the layout file must be saved as DXF file. | * For '''Laser Cutting''' using our [Specific Process Knowledge/Back-end processing/Laser Micromachining Tool|Laser Micromachining Tool], the layout file must be saved as DXF file. | ||
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== Mask Design for UV-lithography == | == Mask Design for UV-lithography == | ||
Here you can find tips and tricks for mask designing. | Here you can find tips and tricks for mask designing. | ||
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The following alignment marks are suggested to use on the Mask aligners for good pattern recognition. Pleased be adviced that they can be removed in KOH etching. | The following alignment marks are suggested to use on the Mask aligners for good pattern recognition. Pleased be adviced that they can be removed in KOH etching. | ||
*Mask aligner: | *Mask aligner: | ||
**[[Media:Alignmentkeys1.cif|Alignment marks 1 .cif]] (Right click and Use "save link as...") - ''You need the program "Clewin" to open this file'' | **[[Media:Alignmentkeys1.cif|Alignment marks 1 (.cif)]] (Right click and Use "save link as...") - ''You need the program "Clewin" to open this file'' | ||
**[[Media:Alignmentkeys1.tdb|Alignment marks 1 .tdb]] - ''You need the program "L-Edit" to open this file'' | **[[Media:Alignmentkeys1.tdb|Alignment marks 1 (.tdb)]] - ''You need the program "L-Edit" to open this file'' | ||
*Maskless aligner: | *Maskless aligner: | ||
**[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]] | **[[Media:MLA AlignmentMarks simple.gds|Simple alignment marks (.gds)]] | ||
**[[Media: | **[[Media:MLA_alignmentMarks_arrows.cif|Alignment marks with structures to assist in locating the marks during alignment (.cif)]] | ||
**[[Media: | **[[Media:AlignmentMark_KOH.cif|Alignment mark for multiple layers, Layer 1 for etch in KOH (.cif)]] | ||
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===Alignment marks location=== | |||
For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]] | For the mask aligners [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-1|MA6-1]] and [[Specific_Process_Knowledge/Lithography/UVExposure#Aligner:_MA6-2|MA6-2]] | ||
* | *For Top Side Alignment (TSA) alignment marks should be located 35-80 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y) | ||
*For Back Side Alignment (BSA) alignment marks should be located 15-45 mm in left and right in horizontal location (X) from mask center and between -20 and +20 mm in vertical location (Y) | |||
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=== Alignment marks for E-beam lithography === | === Alignment marks for E-beam lithography === | ||
If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [ | If your UV mask is used to define wafers marks in e-beam lithography with JEOL JBX-9500, you should design your alignment marks in a way the JEOL JBX-9500 recognizes. Please follow the guide [[Specific_Process_Knowledge/Lithography/EBeamLithography/JEOLAlignment|to e-beam alignment here]] | ||
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=== Helpful information for chip layout === | === Helpful information for chip layout === | ||
*[[Media:Gamma coater & developer chucks + hotplate pins.gds|Gamma coater & developer chucks + hotplate pins.gds]] Design file showing the size of the chucks and the position of the hotplate pins in the Gamma tools. | *[[Media:Gamma coater & developer chucks + hotplate pins.gds|Gamma coater & developer chucks + hotplate pins.gds]] Design file showing the size of the chucks and the position of the hotplate pins in the Gamma tools. | ||
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== Mask Ordering and Fabrication == | == Mask Ordering and Fabrication == | ||
Our standard mask supplier is [https://www.macdermidalpha.com/semiconductor-solutions/compugraphics Compugraphics]. They can provide 5" and 7" masks on soda lime glass or quartz. Minimum feature size can be 0.8µm, 1µm or 1.5µm which is reflected in the price. Read a short guide on[[Media:Mask Ordering Guide.pdf| how to order photomasks from Compugraphics]] here. Templates for the mask specifications for 5" and 7" masks respectively can be seen [[ | Our standard mask supplier is [https://www.macdermidalpha.com/semiconductor-solutions/compugraphics Compugraphics]. They can provide 5" and 7" masks on soda lime glass or quartz. Minimum feature size can be 0.8µm, 1µm or 1.5µm which is reflected in the price. Read a short guide on[[Media:Mask Ordering Guide.pdf| how to order photomasks from Compugraphics]] here. Templates for the mask specifications for 5" and 7" masks respectively can be seen [[/Mask Specifications| <b>here</b>.]] | ||
The masks have to be ordered in Procure. Nanolab cannot order the mask for you but we do offer a final check of the design and mask specifications before you place the order. You can find a guide on [[Media:Maskordering in Fusion.pdf| how to order and attach design files in procure]] here. | The masks have to be ordered in Procure. Nanolab cannot order the mask for you but we do offer a final check of the design and mask specifications before you place the order. You can find a guide on [[Media:Maskordering in Fusion.pdf| how to order and attach design files in procure]] here. | ||
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Give each layer appropriate GDS number respectively CIF names before exporting the file. This is done by double click on the layers and fill out the window that pops up. | Give each layer appropriate GDS number respectively CIF names before exporting the file. This is done by double click on the layers and fill out the window that pops up. | ||
We can also provide guidance regarding the mask design phase. Please contact the | We can also provide guidance regarding the mask design phase. Please contact the [mailto:nanolabsupport@nanolab.dtu.dk | Fabrication Support Team] for help and review. | ||
*[[Media:Maskordering in Fusion.pdf| How to order and attach design files in DTU Fusion]] | *[[Media:Maskordering in Fusion.pdf| How to order and attach design files in DTU Fusion]] | ||
*[[ | *[[/Mask Specifications| Templates for 5" and 7" Mask Specifications]] | ||
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* [[file:dASEfeRIE.tdb | The L-Edit design file]] | * [[file:dASEfeRIE.tdb | The L-Edit design file]] | ||
'''Masks for process development''' | |||
*[[Specific Process Knowledge/Pattern Design/Travka|Travka mask set (7 masks)]] | *[[Specific Process Knowledge/Pattern Design/Travka|Travka mask set (7 masks)]] | ||