Jump to content

Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2: Difference between revisions

Jml (talk | contribs)
Jmli (talk | contribs)
No edit summary
 
(22 intermediate revisions by 2 users not shown)
Line 1: Line 1:
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2 click here]'''
<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Checked for updates on 5/10-2020 - ok/jmli -->
<!--Checked for updates on 28/6-2023 - ok/jmli -->
<!--Checked for updates on 4/9-2025 - ok/jmli -->
{{contentbydryetch}}
== nano1.42 versus pxnano2 ==
== nano1.42 versus pxnano2 ==


{| border="2" cellpadding="2" cellspacing="1"  
{| border="2" cellpadding="2" cellspacing="1"  
|-
|-
! colspan="2" |
! colspan="2" | Recipe
! nano1.42
! nano1.42
! pxnano2
! colspan="2" | pxnano2
|-
|-
!
! colspan="2"| Tool
! Tool
| Pegasus
! Pegasus
| colspan="2"| ASE
! ASE
|-
|-
! rowspan="6" align="center"| Recipe
! rowspan="6" align="center"| Parameters
| Gas
| Gas
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
| C<sub>4</sub>F<sub>8</sub> 75 sccm, SF<sub>6</sub> 38 sccm
| D: C<sub>4</sub>F<sub>8</sub> 50 sccm
| E: C<sub>4</sub>F<sub>8</sub> 50 sccm, SF<sub>6</sub> 50 sccm
|-
| Power
| 800 W CP, 40 W PP
| D: 500 W CP
| E: 350 W CP, 30 W PP
|-
|-
| Pressure
| Pressure
| 4 mTorr, Strike 3 secs @ 15 mTorr
| 4 mTorr, Strike 3 secs @ 15 mTorr
|-
| colspan="2" | 10 mTorr
| Power
| 800 W CP, 40 W PP
|-  
|-  
| Temperature
| Temperature
| -20 degs
| -20 degs
| colspan="2" | 20 degrees
|-
|-
| Hardware
| Hardware
| 100 mm Spacers
| 100 mm Spacers
| colspan="2" | ?
|-
|-
| Time
| Time
| 120 secs
| 120 secs
| colspan="2" | D: 3 secs, E: 5 secs, total 12 cycles or 96 secs
|-
|-
! rowspan="3" align="center"| Conditions
! rowspan="3" align="center"| Conditions
| Run ID
| Run ID
| 2017
| 2150
| colspan="2" | wf_2e09b_mar23
|-
|-
| Conditioning
| Conditioning
| Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
| Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
| colspan="2" | none
|-
|-
| Mask
| Mask
| 211 nm zep etched down to 82 nm
| 211 nm zep etched down to 80 nm
| colspan="2" | 211 nm zep etched down to 130 nm
|-  
|-  
|}
|}




<gallery caption="The results" widths="500" heights="350" perrow="2">
<gallery caption="The results" widths="500" heights="350" perrow="2">


image:WF_2E09a_mar23_2011-030.jpg|The 30 nm trenches etched 120 seconds nano1.42
image:WF_2E09a_mar23_2011-030.jpg|'''nano1.42:''' The 30 nm trenches etched 120 seconds  
image:WF_2E09b_mar23_2011-030.jpg|The 30 nm trenches etched 96 seconds pxnano2
image:WF_2E09b_mar23_2011-030.jpg|'''pxnano2:''' The 30 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-060.jpg|The 60 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-060.jpg|'''nano1.42:''' The 60 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-060.jpg|The 60 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-060.jpg|'''pxnano2:''' The 60 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-090.jpg|The 90 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-090.jpg|'''nano1.42:''' The 90 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-090.jpg|The 90 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-090.jpg|'''pxnano2:''' The 90 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-120.jpg|The 120 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-120.jpg|'''nano1.42:''' The 120 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-120.jpg|The 120 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-120.jpg|'''pxnano2:''' The 120 nm trenches etched 96 seconds


image:WF_2E09a_mar23_2011-150.jpg|The 150 nm trenches etched 120 seconds
image:WF_2E09a_mar23_2011-150.jpg|'''nano1.42:''' The 150 nm trenches etched 120 seconds
image:WF_2E09b_mar23_2011-150.jpg|The 150 nm trenches etched 96 seconds
image:WF_2E09b_mar23_2011-150.jpg|'''pxnano2:''' The 150 nm trenches etched 96 seconds


</gallery>
</gallery>
{| {{table}} align="left"
|+ nano1.42 on the Pegasus
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Average'''
| align="center" style="background:#f0f0f0;"|'''Std. dev.'''
|-
| Etch rates||nm/min||149||161||166||169||170||163||9
|-
| Sidewall angle||degs||91||91||90||90||90||90||0
|-
| CD loss||nm/edge||3||-11||-12||-34||-36||-18||17
|-
| CD loss foot||nm/edge||9||1||1||-20||-9||-4||11
|-
| Bowing||||4||4||2||6||2||4||2
|-
| Bottom curvature||||-46||-40||-37||-31||-23||-35||9
|-
| zep||nm/min||||||||||||66||
|-
|}
{| {{table}} align="center"
|+ pxnano2 on the ASE
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Average'''
| align="center" style="background:#f0f0f0;"|'''Std. dev.'''
|-
| Etch rates||nm/min||215||232||240||243||244||235||12
|-
| Sidewall angle||degs||90||89||89||89||89||89||0
|-
| CD loss||nm/edge||1||-10||-11||-33||-33||-17||15
|-
| CD loss foot||nm/edge||6||2||1||-19||-6||-3||10
|-
| Bowing||||4||2||4||3||1||3||1
|-
| Bottom curvature||||-36||-29||-22||-19||-17||-25||8
|-
| zep||nm/min||||||||||||51||
|-
|
|}