Jump to content

Specific Process Knowledge/Etch/Lithium niobate: Difference between revisions

Bghe (talk | contribs)
No edit summary
Bghe (talk | contribs)
No edit summary
 
(10 intermediate revisions by the same user not shown)
Line 1: Line 1:
=<span style="background:#FF2800">THIS PAGE IS UNDER CONSTRUCTION</span>[[image:Under_construction.png|200px]]=
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''
'''Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.'''


'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''
'''All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.'''


'''Feedback to this page''': '''[mailto:labadviser@danchip.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.danchip.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Etching_of_Titanium click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/Lithium_niobate click here]'''
<!--Page reviewed by jmli 1/8-2016  -->
 
==Etching of Titanium==


Etching of titanium can be done either by wet etch, dry etch or by sputtering with ions.
==Etching of Lithium Niobate==
*[[Specific Process Knowledge/Etch/Wet Titanium Etch|Etching of Ti by wet etch]]
*Etching af Lithium niobate is new to DTU Nanolab. There are some users doing it on the IBE and the ASE. We do not have any results we can show.
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/Titanium|Etching of Ti by dry etch]]
*[[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300/IBE Ti etch|Sputtering of Ti]]
<br clear="all" />
<br clear="all" />


==Comparison of Titanium Etch Methodes==
==Comparison of Lithium niobate Etch Methods==


{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;"  
Line 23: Line 18:
|-style="background:silver; color:black"
|-style="background:silver; color:black"
!
!
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 1]]
!
![[Specific Process Knowledge/Etch/Wet Titanium Etch|Ti wet etch 2]]
![[Specific_Process_Knowledge/Etch/ICP_Metal_Etcher|ICP metal]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/IBE&frasl;IBSD Ionfab 300|IBE (Ionfab300+)]]
![[Specific_Process_Knowledge/Etch/ASE_(Advanced_Silicon_Etch)|ASE]]
!
|-
|-


Line 32: Line 27:
|-style="background:WhiteSmoke; color:black"
|-style="background:WhiteSmoke; color:black"
!Generel description
!Generel description
|BHF Etch of titanium with or without photoresist mask.
|
|Cold RCA1 mix etch of titanium (as stripper or with eagle resist).  
|Sputtering of Lithium niobate - pure physical etch
|Dry plasma etch of Ti
This is the dryetcher we prefer you use for Lithium niobate etching as lithium does not form any volatile etch products. You can assist it with CHF3 if you want that.
|Sputtering of Ti - pure physical etch
|This is an ICP and is for etching materials that forms volatile etch products with fluorine chemistry. We have allowed some lithium niobate etching to be done in this machine but we are not super happy with that since there will be redeposition inside the chamber. Please talk to us about it if you can to do it.
|
|-
|-


Line 42: Line 38:
!Etch rate range
!Etch rate range
|
|
*~?nm/min
*
|
|
*~?nm/min
**~20nm/min
|
|
*~50-200 nm/min (depending on features size and etch load and recipe settings)
*Depending on features size and etch load and recipe settings. We have not recipe for this - you are on your own.
|  
|  
*~20nm/min
|-
|-


Line 55: Line 50:
!Etch profile
!Etch profile
|
|
*Isotropic
*
|
|
*Isotropic
**Anisotropic (angles sidewalls, typical around 70 dg)
|
|
*Anisotropic (vertical sidewalls)
*Anisotropic - expect angles sidewalls.
|
|
*Anisotropic (angles sidewalls, typical around 70 dg)
 
|-
|-


Line 69: Line 64:
!Substrate size
!Substrate size
|
|
*Any size and number that can go inside the beaker in use
*
|
*Any size and number that can go inside the beaker in use
|
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100mm wafers (if you place it/bond it on a 150 mm carrier wafer)
*<nowiki>#</nowiki>1 150mm wafers
|
|
Smaller pieces glued to carrier wafer
Smaller pieces glued to carrier wafer
Line 82: Line 71:
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 150mm wafer
*<nowiki>#</nowiki>1 200mm wafer
*<nowiki>#</nowiki>1 200mm wafer
*
|
*smaller pieces on a carrier wafer
*<nowiki>#</nowiki>1 100 mm wafer
|
|-
|-


Line 88: Line 83:
!'''Allowed materials'''
!'''Allowed materials'''
|
|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
No restrictions cross contamination wise as long as you use the right beaker and make sure that they are safe to enter in the chemicals
|
*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Aluminium
*Titanium
*Chromium
|
|
*Silicon  
*Silicon  
*Silicon oxides
*Silicon oxides
*Silicon nitrides
*Silicon nitrides
*Lithium niobate
*Metals from the +list
*Metals from the +list
*Metals from the -list
*Metals from the -list
Line 114: Line 97:
*Polymers
*Polymers
*Capton tape
*Capton tape
*And many more, please ask the Dryetch group
|
*Silicon
*Quartz/fused silica
*Photoresist/e-beam resist
*PolySilicon,
*Silicon oxide
*Silicon (oxy)nitride
*Less than 4 cm2 of many other materials, check out the cross contamination sheet in LabManager
|
|-
|-


|}
|}