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Specific Process Knowledge/Lithography/Strip: Difference between revisions

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Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,716 edits
 
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{| class="wikitable"
{| class="wikitable"
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!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment !! Other ashing of organic material
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping (PA4 & PA5)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum (PA3)]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum (PA4 & PA5)]] !! Surface treatment !! Other ashing of organic material
|-
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! scope=row style="text-align: left;" | Process pressure
! scope=row style="text-align: left;" | Process pressure
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! scope=row style="text-align: left;" | Test results
! scope=row style="text-align: left;" | Test results
| Ashing rate follows temperature
| Ashing rate follows Power
|-
|-
! scope=row style="text-align: left;" | Wafers  
! scope=row style="text-align: left;" | Wafers  
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! scope=row style="text-align: left;" | Power
! scope=row style="text-align: left;" | Power
| 1000 W 
| Tested parameter
|-
|-
! scope=row style="text-align: left;" | Test processing time
! scope=row style="text-align: left;" | Test processing time
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! scope=row style="text-align: left;" | Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| Tested parameter
| 40°C
|}
|}


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{| class="wikitable"
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! Test setup !! Single substrate
! !! Single substrate
|-
|-
! scope=row| Test results
! scope=row style="text-align: left;" | Test results
| Ashing rate follows power
| Ashing rate follows temperature
|-
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! scope=row| Wafers  
! scope=row style="text-align: left;" | Wafers  
| 1  
| 1  
|-
|-
! scope=row| Wafer size
! scope=row style="text-align: left;" | Wafer size
| 100 mm  
| 100 mm  
|-
|-
! scope=row| Boat position
! scope=row style="text-align: left;" | Boat position
| Center of chamber  
| Center of chamber  
|-
|-
! scope=row| Test wafer position
! scope=row style="text-align: left;" | Test wafer position
| Center of boat  
| Center of boat  
|-
|-
! scope=row| Total gas flow rate
! scope=row style="text-align: left;" | Total gas flow rate
| 200 sccm  
| 200 sccm  
|-
|-
! scope=row| Gas mix ratio
! scope=row style="text-align: left;" | Gas mix ratio
| 30% N<sub>2</sub>
| 30% N<sub>2</sub>
|-
|-
! scope=row| Chamber pressure
! scope=row style="text-align: left;" | Chamber pressure
| 1.3 mbar
| 1.3 mbar
|-
|-
! scope=row| Power
! scope=row style="text-align: left;" | Power
| Tested parameter
| 1000 W
|-
|-
! scope=row| Test processing time
! scope=row style="text-align: left;" | Test processing time
| 2 minutes
| 2 minutes
|-
|-
! scope=row| Test average temperature
! scope=row style="text-align: left;" | Test average temperature
| 40°C
| Tested parameter
|}
|}


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