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DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
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Line 18: Line 18:
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
|-
|-
! scope=row| Purpose  
! scope=row style="text-align: left;" | Purpose  
| Resist descum
| Resist descum
|
|
Line 29: Line 29:
| Metal lift-off
| Metal lift-off
|-
|-
! scope=row| Method
! scope=row style="text-align: left;" | Method
| Plasma ashing
| Plasma ashing
| Plasma ashing
| Plasma ashing
Line 36: Line 36:
| Solvent & ultrasonication
| Solvent & ultrasonication
|-
|-
! scope=row| Process: Gasses
! scope=row style="text-align: left;" | Process gasses
| O<sub>2</sub> (50 sccm)
| O<sub>2</sub> (50 sccm)
|
|
*O<sub>2</sub> (0-500 sccm)
*O<sub>2</sub> (0-500 sccm)
*<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|
|
*O<sub>2</sub> (0-500 sccm)
*O<sub>2</sub> (0-500 sccm)
Line 48: Line 48:
| NA
| NA
|-
|-
! scope=row| Process: Power
! scope=row style="text-align: left;" | Process power
| 10-100 W (10-100%)
| 10-100 W (10-100%)
| 150-1000 W
| 150-1000 W
Line 55: Line 55:
| NA
| NA
|-
|-
! scope=row| Process: Solvent
! scope=row style="text-align: left;" | Process solvent
| NA
| NA
| NA
| NA
Line 66: Line 66:
*IPA (rinsing agent)
*IPA (rinsing agent)
|-
|-
! scope=row| Substrate: Batch
! scope=row style="text-align: left;" | Substrate batch
|
|
*Chips: several
*Chips: several
Line 90: Line 90:
*150 mm wafer: 1-25
*150 mm wafer: 1-25
|-
|-
! scope=row| Substrate: Materials
! scope=row style="text-align: left;" | Substrate materials
|
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*<span style="color:red">'''No polymer substrates'''</span><br>
Line 125: Line 125:
*Films, or patterned films, of any material except type IV (Pb, Te)
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


= Plasma Ashing process parameters=
= Plasma Ashing process parameters=


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
{| class="wikitable"
|-
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum]] !! Surface treatment !! Other ashing of organic material
|-
|-
 
! scope=row style="text-align: left;" | Tool
|-style="background:silver; color:black"
| Plasma asher 4 & 5 || Plasma asher 3: Descum || Plasma asher 4 & 5 || Plasma asher 4 & 5 || Plasma asher 4 & 5
|
|-
! Photoresist stripping
! scope=row style="text-align: left;" | Process pressure
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-  
 
|-style="background:whitesmoke; color:black"
!Process pressure
|1.3 mbar
|1.3 mbar  
|0.5-1.5 mbar  
|0.5-1.5 mbar
|-
|-
 
! scope=row style="text-align: left;" | Process gasses
|-style="background:silver; color:black"
|  
!Process gases
|
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
|
*O<sub>2</sub> (100 sccm)
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|O<sub>2</sub>, CF<sub>4</sub>, N<sub>2</sub> or their mixtures
|
|O<sub>2</sub>
*O<sub>2</sub>
|-
*N<sub>2</sub>
 
*CF<sub>4</sub>
|-style="background:whitesmoke; color:black"
|
!Process  power
*O<sub>2</sub>
|1000 W
|200 W
|150-1000 W
|1000 W or less for heat- sensitive materials
|-
|-
 
! scope=row style="text-align: left;" | Process power
|-style="background:silver; color:black"
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
!Process time
|5-90 minutes
|1-30 minutes
|seconds to minutes
|Between 0.5 and 20 hours, depending on the material
|-
|-
 
! scope=row style="text-align: left;" | Process time
|-style="background:whitesmoke; color:black"
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
!Batch size
|1-25
|1-25
|1 wafer at a time
|1 wafer at a time, use a container, e.g Petri dish
|-
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1-25 || 1-25
|}
|}


<br clear="all" />
<br clear="all" />


<!--
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
Typical process time for stripping in plasma asher 1 or 2:
*1.5 µm AZ 5214E resist film: ~15 min
*10 µm AZ 4562 resist film: ~45 min
 
Typical process parameters:
*O<sub>2</sub>: 400 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 1000 W


{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}


A typical descum process in plasma asher 1 or 2:
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
*O<sub>2</sub>: 70 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 150 W
*Time : 10 min


{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}


Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}


'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''
=Decommisioned tools=
-->
 
=Plasma Asher 1=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]


=Plasma Asher 2=
 
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
=Plasma Asher 3: Descum=
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
Product name: Diener Pico Plasma Asher<br>
Year of purchase: 2014
The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
In this machine, only Oxygen is used for processing.
<b>Typical process parameters:</b><br>
Process: Photoresist descumming<br>
Pressure: 0.2-0.8 mbar<br>
Gas: 45 sccm O<sub>2</sub><br>
Power: 100%<br>
Time: 1 -10 minutes (depending on photoresist type and thickness)<br>
Other materials have not been tested.
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
===Process Information===
Detailed information about descum processing on Plasma asher 3: Descum can be found [[Specific Process Knowledge/Lithography/Descum|here]].
<br clear="all" />
<!-- TARAN 220-03-05
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
Diener Pico Plasma Asher for III-V materials.
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''
<br clear="all" />
<br clear="all" />
-->
=Plasma Asher 4=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
The Plasma Asher 4 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Plasma asher 4 has the following material restrictions:
*No metals allowed
*No metal oxides allowed
*No III-V materials allowed
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
<br clear="all" />
==Process gas ratio for plasma asher 4 & 5==
[[File:PA_gas_mix_v3.png|400px|thumb|Ashing rate as function of gas mix ratio when processing a single 100 mm wafer and when processing a full boat with 25 wafers. The green area (~50% N<sub>2</sub>) covers the optimum range for both situations.|right]]
The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas. Process development tests found that a gas mix of 50% nitrogen gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
{| class="wikitable"
|-
! Test setup !! Single substrate !! Full boat
|-
! scope=row| Test results
| Highest ashing rate at 30-80% Nitrogen || Highest ashing rate at 50-70% Nitrogen
|-
! scope=row| Wafers
| 1 || 25
|-
! scope=row| Wafer size
| 100 mm || 100 mm
|-
! scope=row| Boat position
| Center of chamber || Center of chamber
|-
! scope=row| Test wafer position
| Center of boat || Center of boat
|-
! scope=row| Total gas flow rate
| 500 sccm || 200 sccm
|-
! scope=row| Gas mix ratio
| Tested parameter || Tested parameter
|-
! scope=row| Chamber pressure
| 1.25 mbar || 1.3 mbar
|-
! scope=row| Power
| 1000 W || 1000 W
|-
! scope=row| Test processing time
| 2 minutes || 10 minutes
|-
! scope=row| Test average temperature
| 43°C || 47°C
|}
<br clear="all" />
==Process chamber pressure for plasma asher 4 & 5==
[[File:PA_chamber_pressure_v3.png|400px|thumb|Ashing rate as function of chamber pressure when processing a single substrate and when processing a full boat with 25 substrates. The green area covers the optimum range (~1.3 mbar) for both situations.|right]]
The ashing rate is related to the chamber pressure during processing. Process development tests found that 1.3 mbar gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
{| class="wikitable"
|-
! Test setup !! Single substrate !! Full boat
|-
! scope=row| Test results
| Highest ashing rate at 1.3 mbar || Highest ashing rate at 1.4 mbar
|-
! scope=row| Wafers
| 1 || 25
|-
! scope=row| Wafer size
| 100 mm || 100 mm
|-
! scope=row| Boat position
| Center of chamber || Center of chamber
|-
! scope=row| Test wafer position
| Center of boat || Center of boat
|-
! scope=row| Total gas flow rate
| 150 sccm || 200 sccm
|-
! scope=row| Gas mix ratio
| 30% N<sub>2</sub> || 50% N<sub>2</sub>
|-
! scope=row| Chamber pressure
| Tested parameter || Tested parameter
|-
! scope=row| Power
| 1000 W || 1000 W
|-
! scope=row| Test processing time
| 2 minutes || 10 minutes
|-
! scope=row| Test average temperature
| 43°C || 55°C
|}
<br clear="all" />
==Process gas flow rate for plasma asher 4 & 5==
[[File:PA_flowRate_v4.png|400px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers. The green area covers the optimum range (~200 sccm) for both situations.|right]]
The ashing rate is related to the total gas flow rate during processing. Process development tests found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates. The experiments indicate that the gas flow rate has only a minor impact on the ashing rate.
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
{| class="wikitable"
|-
! Test setup !! Single substrate !! Full boat
|-
! scope=row| Test results
| Highest ashing rate at 200 sccm || Highest ashing rate at 200 sccm
|-
! scope=row| Wafers
| 1 || 25
|-
! scope=row| Wafer size
| 100 mm || 100 mm
|-
! scope=row| Boat position
| Center of chamber || Center of chamber
|-
! scope=row| Test wafer position
| Center of boat || Center of boat
|-
! scope=row| Total gas flow rate
| Tested parameter || Tested parameter
|-
! scope=row| Gas mix ratio
| 30% N<sub>2</sub> || 30% N<sub>2</sub>
|-
! scope=row| Chamber pressure
| 1.3 mbar || 1.3 mbar
|-
! scope=row| Power
| 1000 W || 1000 W
|-
! scope=row| Test processing time
| 2 minutes || 10 minutes
|-
! scope=row| Test average temperature
| 43°C || 47°C
|}
<br clear="all" />
==Process power for plasma asher 4 & 5==
[[File:PA_power_v3.png|400px|thumb|Ashing rate as function of microwave power.|right]]
The ashing rate is related to the power used during processing. Higher power increases ashing rate.
{| class="wikitable"
|-
! Test setup !! Single substrate
|-
! scope=row| Test results
| Ashing rate follows temperature
|-
! scope=row| Wafers
| 1
|-
! scope=row| Wafer size
| 100 mm
|-
! scope=row| Boat position
| Center of chamber
|-
! scope=row| Test wafer position
| Center of boat
|-
! scope=row| Total gas flow rate
| 200 sccm
|-
! scope=row| Gas mix ratio
| 30% N<sub>2</sub>
|-
! scope=row| Chamber pressure
| 1.3 mbar
|-
! scope=row| Power
| 1000 W 
|-
! scope=row| Test processing time
| 2 minutes
|-
! scope=row| Test average temperature
| Tested parameter
|}
<br clear="all" />
==Process temperature for plasma asher 4 & 5==
[[File:PA_temperature_v2.png|400px|thumb|Ashing rate as function of temperature.|right]]
The ashing rate is related to the temperature during processing. Higher temperature increases ashing rate.
{| class="wikitable"
|-
! Test setup !! Single substrate
|-
! scope=row| Test results
| Ashing rate follows power
|-
! scope=row| Wafers
| 1
|-
! scope=row| Wafer size
| 100 mm
|-
! scope=row| Boat position
| Center of chamber
|-
! scope=row| Test wafer position
| Center of boat
|-
! scope=row| Total gas flow rate
| 200 sccm
|-
! scope=row| Gas mix ratio
| 30% N<sub>2</sub>
|-
! scope=row| Chamber pressure
| 1.3 mbar
|-
! scope=row| Power
| Tested parameter
|-
! scope=row| Test processing time
| 2 minutes
|-
! scope=row| Test average temperature
| 40°C
|}
<br clear="all" />
==Comparison of ashing rate between substrate sizes for plasma asher 4 & 5==
[[File:PA_comparison_v3.png|400px|thumb|Comparison of ashing rate with different substrate sizes. Process was done using a single substrate placed in the middle of the glass boat, which was placed in the center of the chamber.|right]]
The ashing rate is highest for 100 mm substrates, lower for 150 mm substrates and even lower for 200 mm substrates.
All substrate sizes follows the same pattern:
*Ashing rate increases with a higher percentage nitrogen in the gas mix
*Ashing rate increases with a higher chamber pressure
*The total gas flow has only little influence on the ashing rate, but <i>slightly</i> favors the lower flow rate of 200 sccm, similar to previous experiment results
<br clear="all" />
'''Process parameter impact on ashing rate'''<br>
Investigating the ashing rate using linear regression models on the process parameters, indicates that the gas mix and the chamber pressure has a significant impact on the ashing rate, while the gas flow has only little effect:
<gallery mode="packed-hover" heights="150">
ParamEffect_100_mm_v1.png|100 mm parameter impact
ParamEffect_150_mm_v1.png|150 mm parameter impact
ParamEffect_200_mm_v1.png|200 mm parameter impact
</gallery>
<br clear="all" />
=Plasma Asher 5=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 5 in cleanroom E-5.|right]]
Product name: PVA Tepla Gigabatch 380M<br>
Year of purchase: 2024
The Plasma Asher 5 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Furthermore plasma processing using CF<sub>4</sub> in plasma asher 5 can be used for:
*Etching of glass and ceramic
*Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si
*Removal of polyimide layers
'''Typical stripping parameters'''
*Resist: 1.5 µm AZ 5214E
*Substrate: 100 mm Si
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20 minutes
*Time (full boat): 90 minutes
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login'''
===Process Information===
Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 [[Specific_Process_Knowledge/Lithography/Strip#Process_gas_ratio_for_plasma_asher_4_&_5|here]].
'''Other processes specfic for plasma asher 5:'''<br>
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 1]]
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]
<br clear="all" />
=Resist Strip=
[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]]
This resist strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
'''Here are the main rules for resist strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
*After the strip rinse your wafers in the IPA bath for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping.
The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login'''
<br clear="all" />
==Overview of wet bench 06 and 07==
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-style="background:silver; color:black"
|
! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-
|-style="background:whitesmoke; color:black"
!General description'''
|Wet stripping of resist
|Lift-off process
|-
|-style="background:silver; color:black"
!Chemical solution
|NMP Remover 1165
|NMP Remover 1165
|-
|-style="background:whitesmoke; color:black"
!Process temperature
|Up to 65°C
|Up to 65°C
|-
|-style="background:silver; color:black"
!Batch size
|
1 - 25 wafers
|
1 - 25 wafers
|-
|-style="background:whitesmoke; color:black"
!Size of substrate
|
*100 mm wafers
*150 mm wafers
|
*100 mm wafers
*150 mm wafers
|-
|-style="background:silver; color:black"
!Allowed materials
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
|
All metals except Type IV (Pb, Te)
|-
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Strip"