Specific Process Knowledge/Etch/ICP Metal Etcher/Chromium/End point: Difference between revisions
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<gallery caption="S047676 X min, Feb-2025, wafer edge, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="1"> | <gallery caption="S047676 X min, Feb-2025, wafer edge, 100 nm Cr mask, with 500 nm resist" widths="600px" heights="550px" perrow="1"> | ||
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==Etched too long== | ==Etched too long== | ||
The etch rate is faster near the edge. Therefor the trenches are in general wider at the edges. Here all structures has been etched down to the SiO2 layer but the dimensions | The etch rate is faster near the edge. Therefor the trenches are in general wider at the edges. Here all structures has been etched down to the SiO2 layer but the dimensions are affected, especially at the edge the trenches have become wider. The sidewalls are close to 90 degrees; Sometimes a little positive and sometimes a little negative. The improve more the etch time should be decreased. | ||
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