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__TOC__
__TOC__


=Plasma Asher 1=
= Descum Comparison Table =
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
{| class="wikitable"
 
|-
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
!
 
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
=Plasma Asher 2=
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher 4|Plasma Asher 4 (Clean)]]
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
 
|-
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
! scope=row style="text-align: left;" |  Purpose
 
| Resist descum
=Plasma Asher 3: Descum=
|
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
*Resist stripping
 
*Resist descum
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
|
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
*Resist stripping
 
*Resist descum
 
'''Ashing of  AZ MiR701 resist:'''<br>
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
 
 
'''Testing different power settings:'''
[[image:AZMIR701_power_settings.png|640px|thumb|Descum results for different power settings]]
 
'''Recipe settings:'''
*O2 flow: 5 sccm
*N2 flow: 0
*Pressure: 0.2 mbar
*Power: Varied
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Power
|-
|'''recipe 1''' || 50/0 || 52/31 || 50%
|-
|-
|'''recipe 2''' || 100/0 || 53/31 || 100%
! scope=row style="text-align: left;" | Method
| Plasma ashing
| Plasma ashing
| Plasma ashing
|-
|-
|'''recipe 3''' || 20/0 || 51/34 || 20%
! scope=row style="text-align: left;" | Process gasses
| O<sub>2</sub> (50 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
|-
|-
|}
! scope=row style="text-align: left;" | Process power
|}
| 10-100 W (10-100%)
<br clear="all" />
| 150-1000 W
 
| 150-1000 W
 
'''Testing different pressure settings:'''
[[image:AZMIR701_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]
 
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-  
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2
|-
|-
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8
! scope=row style="text-align: left;" | Substrate batch
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|-
|-
|}
! scope=row style="text-align: left;" | Substrate materials
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


'''Ashing of AZ5214E resist:'''
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher03}}
[[image:AZ5214E_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]


{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher04}}


'''Recipe settings:'''
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher05}}
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)


=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


'''Experiment parameters:'''
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 17 || 0,4
|-
|'''recipe 2''' || 100/0 || 37/39 || 45 || 0,8
|-
|}
|}
<br clear="all" />


=Plasma Asher 4=
==Descum processing in plasma asher 4 & 5==
[[File:PA_descum_single_v1.png|400px|thumb|Ashing amount and ashing rate when processing a single 100 mm wafer.|right]]


[[File:PA_descum_multi_v1.png|400px|thumb|Ashing amount and ashing rate when processing multiple 100 mm wafers. Test measured on the center of 3 wafers.|right]]
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
Descum of AZ 5214E on 100 mm wafers. The descum process was tested for single substrates, as well as 3 substrates, placed vertically in the glass boat. For the 3 substrates only the center substrate was used for testing, the front and back wafers were used as dummy wafers.
 
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
 
{| class="wikitable"
|-
! Test setup !! Single substrate !! Center of 3 substrates
|-
! scope=row| Test results
| Ashing rate: 5.7 ±2.1 µm/min<br>Non-uniformity: 0.6 ±0.4% || Ashing rate: 3.8 ±1.6 µm/min<br>Non-uniformity: 0.4 ±0.2%
|-
! scope=row| Wafers
| 1 || 3
|-
! scope=row| Wafer size
| 100 mm || 100 mm
|-
! scope=row| Boat position
| Center of chamber || Center of chamber
|-
! scope=row| Test wafer position
| Center of boat || Center of boat
|-
! scope=row| Total gas flow rate
| 200 sccm || 200 sccm
|-
! scope=row| Gas mix ratio
| 50% N<sub>2</sub> || 50% N<sub>2</sub>
|-
! scope=row| Chamber pressure
| 1.3 mbar || 1.3 mbar
|-
! scope=row| Power
| 200 W || 200 W
|-
! scope=row| Test processing time
| Tested parameter || Tested parameter
|-
! scope=row| Test average temperature
| 33°C || 33°C
|}


[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
<br clear="all" />
<br clear="all" />
=Plasma Asher 5=
<span style="color:red">Coming soon</span>
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Descum"