Specific Process Knowledge/Lithography/Strip: Difference between revisions

! scope=row| Purpose  

! scope=row| Method

! scope=row| Process: Gasses

! scope=row| Process: Power

! scope=row| Process: Solvent

! scope=row| Substrate: Batch

! scope=row| Substrate: Materials

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! Photoresist stripping

! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]

! Surface treatment of plastic, ceramic and metal

! Ashing of organic material

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!Process pressure

|1.3 mbar

|1.3 mbar  

|0.5-1.5 mbar  

|0.5-1.5 mbar

 

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!Process gases

|

|O₂, CF₄, N₂ or their mixtures

|O₂

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!Process power

|1000 W or less for heat- sensitive materials

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|Between 0.5 and 20 hours, depending on the material

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|1 wafer at a time, use a container, e.g Petri dish

Typical process time for stripping in plasma asher 1 or 2:

*1.5 µm AZ 5214E resist film: ~15 min

*10 µm AZ 4562 resist film: ~45 min

Typical process parameters:  

*O₂: 400 ml/min

*N₂: 70 ml/min

*Power: 1000 W

A typical descum process in plasma asher 1 or 2:

*O₂: 70 ml/min

*Power: 150 W

*Time : 10 min

Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.

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! Test setup !! Single substrate !! Full boat

! scope=row| Test results

! scope=row| Wafers  

! scope=row| Wafer size

! scope=row| Boat position

! scope=row| Test wafer position

! scope=row| Total gas flow rate

! scope=row| Gas mix ratio

! scope=row| Chamber pressure

! scope=row| Power

! scope=row| Test processing time

! scope=row| Test average temperature

! Test setup !! Single substrate !! Full boat

! scope=row| Test results

! scope=row| Wafers  

! scope=row| Wafer size

! scope=row| Boat position

! scope=row| Test wafer position

! scope=row| Total gas flow rate

! scope=row| Gas mix ratio

! scope=row| Chamber pressure

! scope=row| Power

! scope=row| Test processing time

! scope=row| Test average temperature

! Test setup !! Single substrate !! Full boat

! scope=row| Test results

! scope=row| Wafers  

! scope=row| Wafer size

! scope=row| Boat position

! scope=row| Test wafer position

! scope=row| Total gas flow rate

! scope=row| Gas mix ratio

! scope=row| Chamber pressure

! scope=row| Power

! scope=row| Test processing time

! scope=row| Test average temperature

! Test setup !! Single substrate

! scope=row| Test results

| Ashing rate follows temperature

! scope=row| Wafers  

! scope=row| Wafer size

! scope=row| Boat position

! scope=row| Test wafer position

! scope=row| Total gas flow rate

! scope=row| Gas mix ratio

! scope=row| Chamber pressure

! scope=row| Power

| 1000 W 

! scope=row| Test processing time

! scope=row| Test average temperature

| Tested parameter

[[File:PA_temperature_v2.png|480px|thumb|Ashing rate as function of temperature.|right]]

! Test setup !! Single substrate

! scope=row| Test results

| Ashing rate follows power

! scope=row| Wafers  

! scope=row| Wafer size

! scope=row| Boat position

! scope=row| Test wafer position

! scope=row| Total gas flow rate

! scope=row| Gas mix ratio

! scope=row| Chamber pressure

! scope=row| Power

| Tested parameter

! scope=row| Test processing time

! scope=row| Test average temperature

| 40°C

[[File:PA_comparison_v2.png|480px|thumb|Comparison of ashing rate with different sibstrate sizes. Process was done using a single substrate placed in the middle of the glass boat, which was placed in the center of the chamber.|right]]

The ashing rate is slightly higher for 100 mm substrates, but there is no difference between a 150 mm wafer and a 200 mm wafer.  

All substrate sizes seems to follow the same pattern; ashing rate increases with a higher percentage nitrogen in the gas mix and also with a higher chamber pressure. The total gas flow has only little influence on the ashing rate, but slightly favors the lower flow rate of 200 sccm, similar to previous experiment results.

Looking at ashing rate, using linear regression models on the process parameters, indicates that the gas mix and the chamber pressure has a significant impact on the ashing rate, while the gas flow has only little effect:

ParamEffect_100_mm_v1.png|100 mm process parameter impact

ParamEffect_150_mm_v1.png|150 mm process parameter impact

ParamEffect_200_mm_v1.png|200 mm process parameter impact

[[File:PA5 front.jpg|320px|thumb|Plasma asher 5 in cleanroom E-5.|right]]

*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO₂ etch using Plasma Asher 5]]

[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]]

 

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! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]  

! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]

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|Wet stripping of resist

|Lift-off process

 

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!Chemical solution

|NMP Remover 1165

|NMP Remover 1165

 

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!Process temperature

|Up to 65°C

|Up to 65°C

 

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1 - 25 wafers

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1 - 25 wafers

 

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*Silicon Oxide

*Silicon Nitride

*Silicon Oxynitride

|

All metals except Type IV (Pb, Te)