{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
Typical process time for stripping in plasma asher 1 or 2:
*1.5 µm AZ 5214E resist film: ~15 min
*10 µm AZ 4562 resist film: ~45 min
Typical process parameters:
*O<sub>2</sub>: 400 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 1000 W
A typical descum process in plasma asher 1 or 2:
*O<sub>2</sub>: 70 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 150 W
*Time : 10 min
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''
-->
==Process gas ratio for plasma asher 4 & 5==
[[File:PA_gas_mix_v3.png|320px|thumb|Ashing rate as function of gas mix ratio when processing a single 100 mm wafer and when processing a full boat with 25 wafers.|right]]
The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas. Process development tests found that a gas mix of 50% nitrogen gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
'''Single substrate:'''<br>
Test using a single 100 mm wafer in the center of the process chamber shows that 30-80% nitrogen gives the highest ashing rate.
Total gas flow rate: 500 sccm<br>
Gas mix ratio: tested parameter<br>
Chamber pressure: 1.25 mbar<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
<br clear="all" />
'''Full boat:'''<br>
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 50-70% nitrogen gives the highest ashing rate.
Total gas flow rate: 200 sccm<br>
Gas mix ratio: tested parameter<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 10 minutes<br>
Temperature (average): 43°C
<br clear="all" />
==Process chamber pressure for plasma asher 4 & 5==
[[File:PA_chamber_pressure_v3.png|320px|thumb|Ashing rate as function of chamber pressure when processing a single substrate and when processing a full boat with 25 substrates.|right]]
The ashing rate is related to the chamber pressure during processing. Process development tests found that 1.3 mbar gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
'''Single substrate:'''<br>
Test using a single 100 mm wafer in the center of the process chamber shows that 1.3 mbar gives the highest ashing rate.
Total gas flow rate: 500 sccm<br>
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: tested parameter<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
<br clear="all" />
'''Full boat:'''<br>
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 1.4 mbar gives the highest ashing rate.
Total gas flow rate: 200 sccm<br>
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: tested parameter<br>
Power: 1000 W<br>
Processing time: 10 minutes<br>
Temperature (average): 43°C
<br clear="all" />
==Process gas flow rate for plasma asher 4 & 5==
[[File:PA_flowRate_v4.png|320px|thumb|Ashing rate as function of total gas flow when processing a single substrate and when processing a full boat with 25 wafers.|right]]
The ashing rate is related to the total gas flow rate during processing. Process development tests found that 200 sccm gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
Please note that the ashing rate for a full boat is approximately ten times slower, than the processing time for a single substrate.
'''Single substrate:'''<br>
Test using a single 100 mm wafer in the center of the process chamber shows that 200 sccm gives the highest ashing rate.
Total gas flow rate: tested parameter<br>
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
<br clear="all" />
'''Full boat:'''<br>
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 200 sccm gives the highest ashing rate.
Total gas flow rate: tested parameter<br>
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 10 minutes<br>
Temperature (average): 43°C
<br clear="all" />
==Process power for plasma asher 4 & 5==
[[File:PA_power_v3.png|320px|thumb|Ashing rate as function of microwave power.|right]]
The ashing rate is related to the power used during processing. Higher power increases ashing rate.
'''Single substrate:'''<br>
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate.
Total gas flow rate: 200 sccm<br>
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: 1.3 mbar<br>
Power: tested parameter<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
<br clear="all" />
==Process temperature for plasma asher 4 & 5==
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
[[File:PA_temperature_v2.png|320px|thumb|Ashing rate as function of temperature.|right]]
The ashing rate is related to the temperature during processing. Higher temperature increases ashing rate.
'''Single substrate:'''<br>
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}
Test using a single 100 mm wafer in the center of the process chamber shows that increasing processing temperature gives increasing ashing rate.
Total gas flow rate: 200 sccm<br>
=Decommisioned tools=
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): tested parameter
<br clear="all" />
=Plasma Asher 1=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
=Plasma Asher 2=
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
=Plasma Asher 3: Descum=
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
In this machine, only Oxygen and Nitrogen are used for processing.
<b>Typical process parameters:</b><br>
Process: Photoresist descumming<br>
Pressure: 0.2-0.8 mbar<br>
Gas: 45 sccm O<sub>2</sub><br>
Power: 100%<br>
Time: 1 -10 minutes (depending on photoresist type and thickness)<br>
Other materials have not been tested.
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
===Process Information===
Detailed information about descum processing on Plasma asher 3: Descum can be found [[Specific Process Knowledge/Lithography/Descum|here]].
<br clear="all" />
<!-- TARAN 220-03-05
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
Diener Pico Plasma Asher for III-V materials.
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''
<br clear="all" />
-->
=Plasma Asher 4=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
The Plasma Asher 4 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Plasma asher 4 has the following material restrictions:
*No metals allowed
*No metal oxides allowed
*No III-V materials allowed
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 4|Descum using plasma asher 4]]
'''Typical stripping parameters'''
*Resist: 1.5 µm AZ 5214E
*Substrate: 100 mm Si
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20 minutes
*Time (full boat): 90 minutes
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum|Descum]]
<br clear="all" />
=Plasma Asher 5=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 5 in cleanroom E-5.|right]]
The Plasma Asher 5 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Furthermore plasma processing using CF<sub>4</sub> in plasma asher 5 can be used for:
*Etching of glass and ceramic
*Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si
*Removal of polyimide layers
'''Typical stripping parameters'''
*Resist: 1.5 µm AZ 5214E
*Substrate: 100 mm Si
*O<sub>2</sub>: 100 sccm
*N<sub>2</sub>: 100 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20 minutes
*Time (full boat): 90 minutes
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 5]]
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]
<br clear="all" />
=Resist Strip=
[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]]
This resist strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
'''Here are the main rules for resist strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
*After the strip rinse your wafers in the IPA bath for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping.
The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login'''
Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates.
Product name: Diener Pico Plasma Asher
Year of purchase: 2014
The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
In this machine, only Oxygen is used for processing.
Typical process parameters:
Process: Photoresist descumming
Pressure: 0.2-0.8 mbar
Gas: 45 sccm O2
Power: 100 W (100%)
Time: 1 -10 minutes (depending on photoresist type and thickness)
Other materials have not been tested.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information
Detailed information about descum processing on Plasma asher 3: Descum can be found here.
Plasma Asher 4
Plasma asher 4 in cleanroom E-5.
Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024
The Plasma Asher 4 can be used for the following processes:
Photoresist stripping
Descumming
Surface cleaning
Removal of organic passivation layers and masks
Plasma asher 4 has the following material restrictions:
No metals allowed
No metal oxides allowed
No III-V materials allowed
The user manual, risk assessment, and contact information can be found in LabManager - requires login
Typical stripping parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024
The Plasma Asher 5 can be used for the following processes:
Photoresist stripping
Descumming
Surface cleaning
Removal of organic passivation layers and masks
Furthermore plasma processing using CF4 in plasma asher 5 can be used for:
Etching of glass and ceramic
Etching of SiO2, Si3N4, Si
Removal of polyimide layers
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
The user manual, risk assessment, and contact information can be found in LabManager - requires login
Process Information
Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 here.
