{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}
Typical process time for stripping in plasma asher 1 or 2:
*1.5 µm AZ 5214E resist film: ~15 min
*10 µm AZ 4562 resist film: ~45 min
Typical process parameters:
*O<sub>2</sub>: 400 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 1000 W
A typical descum process in plasma asher 1 or 2:
*O<sub>2</sub>: 70 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 150 W
*Time : 10 min
Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''
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==Process gas ratio for plasma asher 4 & 5==
[[File:PA_gas_mix_v3.png|320px|thumb|Ashing rate as function of gas mix ratio when processing a single 100 mm wafer and when processing a full boat with 25 wafers.|right]]
The ashing rate is related to the gas mix, usually expressed as percentage of nitrogen of the total amount of gas.
Testing found that a gas mix of 50% nitrogen gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
'''Single substrate:'''<br>
Test using a single 100 mm wafer in the center of the process chamber shows that 30-80% nitrogen gives the highest ashing rate.
Total gas flow rate: 500 sccm<br>
Gas mix ratio: tested parameter<br>
Chamber pressure: 1.25 mbar<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
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'''Full boat:'''<br>
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 50-70% nitrogen gives the highest ashing rate.
Total gas flow rate: 200 sccm<br>
Gas mix ratio: tested parameter<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 5 minutes<br>
Temperature (average): 43°C
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==Process chamber pressure for plasma asher 4 & 5==
[[File:PA_chamber_pressure_v3.png|320px|thumb|Ashing rate as function of chamber pressure when processing a single substrate and when processing a full boat with 25 substrates.|right]]
The ashing rate is related to the chamber pressure during processing.
Testing found that 1.3 mbar gives the highest ashing rate for both processing single substrates and when processing a full boat with 25 substrates.
'''Single substrate:'''<br>
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
Test using a single 100 mm wafer in the center of the process chamber shows that 1.3 mbar gives the highest ashing rate.
Total gas flow rate: 500 sccm<br>
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: tested parameter<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
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'''Full boat:'''<br>
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that 1.4 mbar gives the highest ashing rate.
Total gas flow rate: 200 sccm<br>
Gas mix ratio: 30% nitrogen<br>
Chamber pressure: tested parameter<br>
Power: 1000 W<br>
Processing time: 5 minutes<br>
Temperature (average): 43°C
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==Process gas flow rate for plasma asher 4 & 5==
[[File:PA_flowRate_v3.png|320px|thumb|Ashing rate as function of total gas flow when processing a single 100 mm wafer.|right]]
The ashing rate is related to the total gas flow rate during processing.
Test using a single 100 mm wafer in the center of the process chamber shows that a total flow rate of 200 sccm gives the highest ashing rate.
<b>Test parameters:</b><br>
Total gas flow rate: tested parameter<br>
Gas mix ratio: 30% nitrogen<br>
DSC: 1.3 mbar<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
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[[File:PA_flowRateFullBoat_v1.png|320px|thumb|Ashing rate as function of total gas flow when processing a full boat of 25 100 mm wafers.|right]]
Test using a boat of 25 100 mm wafers in the center of the process chamber shows that a total flow rate of 200 sccm gives the highest ashing rate.
<b>Test parameters:</b><br>
Total gas flow rate: tested parameter<br>
Gas mix ratio: 30% nitrogen<br>
DSC: 1.3 mbar<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 5 minutes<br>
Temperature (average): 43°C
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==Process power for plasma asher 4 & 5==
[[File:PA_power_v2.png|320px|thumb|Ashing rate as function of microwave power.|right]]
The ashing rate is related to the power used during processing. Higher power gives higher ashing rate.
Test using a single 100 mm wafer in the center of the process chamber shows that a power of 1000 W gives the highest ashing rate.
<b>Test parameters:</b><br>
Total gas flow rate: 200 sccm<br>
Gas mix ratio: 30% nitrogen<br>
DSC: 1.3 mbar<br>
Chamber pressure: 1.3 mbar<br>
Power: tested parameter<br>
Processing time: 2 minutes<br>
Temperature (average): 43°C
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==Process temperature for plasma asher 4 & 5==
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
[[File:PA_temperature_v1.png|320px|thumb|Ashing rate as function of temperature.|right]]
The ashing rate is related to the temperature during processing. Higher temperature gives higher ashing rate.
Test using a single 100 mm wafer in the center of the process chamber shows that increasing processing temperature gives increasing ashing rate.
{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}
<b>Test parameters:</b><br>
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}
Total gas flow rate: 200 sccm<br>
Gas mix ratio: 30% nitrogen<br>
DSC: 1.3 mbar<br>
Chamber pressure: 1.3 mbar<br>
Power: 1000 W<br>
Processing time: 2 minutes<br>
Temperature (average): tested parameter
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=Plasma Asher 1=
=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]
=Plasma Asher 2=
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
=Plasma Asher 3: Descum=
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate or a few smaller pieces.
In this machine, only O2 and N2 gases are used for processes.
<b>Typical process parameters when operating the equipment:</b><br>
Process: Photoresist descum<br>
Pressure: 0.2-0.8 mbar<br>
Gas: O<sub>2</sub><br>
Power: 50-100%<br>
Time:1 -10 minutes (depending on photoresist type and thickness)<br>
The other materials have not been tested yet.
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
===Process Information===
Detailed information about descum processing on Plasma asher 3: Descum can be found [[Specific Process Knowledge/Lithography/Descum|here]].
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<!-- TARAN 220-03-05
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
Diener Pico Plasma Asher for III-V materials.
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''
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-->
=Plasma Asher 4=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 4 in cleanroom E-5.|right]]
The Plasma Asher 4 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Plasma asher 4 has the following material restrictions:
*No metals allowed
*No metal oxides allowed
*No III-V materials allowed
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=530 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 4|Descum using plasma asher 4]]
'''Typical stripping parameters'''
*Resist: 1.5 µm AZ 5214E
*Substrate: 100 mm Si
*O<sub>2</sub>: 140 sccm
*N<sub>2</sub>: 60 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20 minutes
*Time (full boat): 90 minutes
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum|Descum]]
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=Plasma Asher 5=
[[File:PA5 front.jpg|320px|thumb|Plasma asher 5 in cleanroom E-5.|right]]
The Plasma Asher 5 can be used for the following processes:
*Photoresist stripping
*Descumming
*Surface cleaning
*Removal of organic passivation layers and masks
Furthermore plasma processing using CF<sub>4</sub> in plasma asher 5 can be used for:
*Etching of glass and ceramic
*Etching of SiO<sub>2</sub>, Si<sub>3</sub>N<sub>4</sub>, Si
*Removal of polyimide layers
'''Typical stripping parameters'''
*Resist: 1.5 µm AZ 5214E
*Substrate: 100 mm Si
*O<sub>2</sub>: 140 sccm
*N<sub>2</sub>: 60 sccm
*Pressure (DSC): 1.3 mbar
*Power: 1000 W
*Time (single wafer): 20 minutes
*Time (full boat): 90 minutes
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
The user manual, risk assessment, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=531 LabManager] - '''requires login'''
===Process Information===
*[[Specific Process Knowledge/Etch/Etching of Silicon Oxide/SiO2 etch using Plasma Asher |SiO<sub>2</sub> etch using Plasma Asher 5]]
*[[Specific Process Knowledge/Lithography/Descum#Plasma Asher 5|Descum using plasma asher 5]]
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=Resist Strip=
[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]]
This resist strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
'''Here are the main rules for resist strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
*After the strip rinse your wafers in the IPA bath for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping.
The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login'''
Plasma Asher 3: Descum is a low power plasma asher dedicated for descumming on smaller substrates.
Product name: Diener Pico Plasma Asher
Year of purchase: 2014
The Plasma Asher 3: Descum is dedicated for resist descum, i.e. removal of remains resist traces after development. It has a small chamber, so you can only load a single 100 mm substrate, or a few smaller pieces.
In this machine, only Oxygen is used for processing.
Typical process parameters:
Process: Photoresist descumming
Pressure: 0.2-0.8 mbar
Gas: 45 sccm O2
Power: 100 W (100%)
Time: 1 -10 minutes (depending on photoresist type and thickness)
Other materials have not been tested.
The user manual, user APV, and contact information can be found in LabManager - requires login
Process Information
Detailed information about descum processing on Plasma asher 3: Descum can be found here.
Plasma Asher 4
Plasma asher 4 in cleanroom E-5.
Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024
The Plasma Asher 4 can be used for the following processes:
Photoresist stripping
Descumming
Surface cleaning
Removal of organic passivation layers and masks
Plasma asher 4 has the following material restrictions:
No metals allowed
No metal oxides allowed
No III-V materials allowed
The user manual, risk assessment, and contact information can be found in LabManager - requires login
Typical stripping parameters
Tested with 1.5 µm AZ 5214E on 100 mm silicon substrate.
Product name: PVA Tepla Gigabatch 380M
Year of purchase: 2024
The Plasma Asher 5 can be used for the following processes:
Photoresist stripping
Descumming
Surface cleaning
Removal of organic passivation layers and masks
Furthermore plasma processing using CF4 in plasma asher 5 can be used for:
Etching of glass and ceramic
Etching of SiO2, Si3N4, Si
Removal of polyimide layers
Plasma asher 5 can be used for almost every material, but if you have any doubt if your materials are compatible/allowed in plasma asher 5, feel free to ask the lithography group at Nanolab.
The user manual, risk assessment, and contact information can be found in LabManager - requires login
Process Information
Plasma asher 5 is identical to plasma asher 4, see resist strip processing for plasma asher 4 here.
