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= Strip Comparison Table =
= Strip Comparison Table =
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
{| class="wikitable"
 
|-
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Equipment
!
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Plasma Asher 4]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Plasma Asher 4 (Clean)]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 5|Plasma Asher 5]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]</b>
! [[Specific_Process_Knowledge/Lithography/Strip#Resist Strip|Resist strip]]
|style="background:WhiteSmoke; color:black"|<b>[[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]</b>
! [[Specific Process Knowledge/Lithography/LiftOff|Lift-off]]
 
|-
|-
!style="background:silver; width:100px; color:black;" align="center"|Purpose  
! scope=row style="text-align: left;" | Purpose  
|style="background:LightGrey; color:black"|
| Resist descum
|style="background:WhiteSmoke; color:black"|
|
Resist descum
*Resist stripping
|style="background:WhiteSmoke; color:black"|
*Resist descum
Clean wafers only, no metal
|
|style="background:WhiteSmoke; color:black"|
*Resist stripping
All purposes
*Resist descum
|style="background:WhiteSmoke; color:black"|
| Resist stripping
Resist strip, no metal lift off
| Metal lift-off
|style="background:WhiteSmoke; color:black"|
Lift-off
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Method
! scope=row style="text-align: left;" | Method
|style="background:LightGrey; color:black"|
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Plasma ashing
Plasma ashing
| Plasma ashing
|style="background:WhiteSmoke; color:black"|
| Solvent & ultrasonication
Plasma ashing
| Solvent & ultrasonication
|style="background:WhiteSmoke; color:black"|
Plasma ashing
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
|style="background:WhiteSmoke; color:black"|
Solvent and ultra sound
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Process parameters
! scope=row style="text-align: left;" | Process gasses
|style="background:LightGrey; color:black"|Process gasses
| O<sub>2</sub> (50 sccm)
|style="background:WhiteSmoke; color:black"|
|
*O<sub>2</sub> (flow unknown)
|style="background:WhiteSmoke; color:black"|
*O<sub>2</sub> (0-500 sccm)
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|style="background:WhiteSmoke; color:black"|
|
*O<sub>2</sub> (0-500 sccm)
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
*CF<sub>4</sub> (0-200 sccm)
|style="background:WhiteSmoke; color:black"|
| NA
*NA
| NA
|style="background:WhiteSmoke; color:black"|
*NA
 
|-
|-
|style="background:LightGrey; color:black"|Max. process power
! scope=row style="text-align: left;" | Process power
|style="background:WhiteSmoke; color:black"|
| 10-100 W (10-100%)
100 W (100%)
| 150-1000 W
|style="background:WhiteSmoke; color:black"|
| 150-1000 W
150-1000 W
| NA
|style="background:WhiteSmoke; color:black"|
| NA
150-1000 W
|style="background:WhiteSmoke; color:black"|
*NA
|style="background:WhiteSmoke; color:black"|
*NA
 
|-
|-
|style="background:LightGrey; color:black"|Solvent
! scope=row style="text-align: left;" | Process solvent
|style="background:WhiteSmoke; color:black"|
| NA
*NA
| NA
|style="background:WhiteSmoke; color:black"|
| NA
*NA
|
|style="background:WhiteSmoke; color:black"|
*NA
|style="background:WhiteSmoke; color:black"|
*NMP (Remover 1165)
*NMP (Remover 1165)
*Rinse in IPA
*IPA (rinsing agent)
|style="background:WhiteSmoke; color:black"|
|
*NMP (Remover 1165)
*NMP (Remover 1165)
*Rinse in IPA
*IPA (rinsing agent)
 
|-
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
! scope=row style="text-align: left;" | Substrate batch
|style="background:LightGrey; color:black"|Batch size
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*1 small sample
*50 mm wafer: several
*1 50 mm wafer
*100 mm wafer: 1
*1 100 mm wafer
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*1 small sample
*50 mm wafer: several
*1 50 mm wafer
*100 mm wafer: 1-25
*1-25 100 mm wafers
*150 mm wafer: 1-25
*1-25 150 mm wafers
*200 mm wafer: 1-25
*1-25 200 mm wafers
|
|style="background:WhiteSmoke; color:black"|
*Chips: several
*1 small sample
*50 mm wafer: several
*1 50 mm wafer
*100 mm wafer: 1-25
*1-25 100 mm wafers
*150 mm wafer: 1-25
*1-25 150 mm wafers
*200 mm wafer: 1-25
*1-25 200 mm wafers
|
|style="background:WhiteSmoke; color:black"|
*100 mm wafer: 1-25
*1 - 25 100 mm wafers
*150 mm wafer: 1-25
*1 - 25 150 mm wafers
|
|style="background:WhiteSmoke; color:black"|
*100 mm wafer: 1-25
*1 - 25 100 mm wafers
*150 mm wafer: 1-25
*1 - 25 150 mm wafers
|-
|-
|style="background:LightGrey; color:black"|Allowed materials
! scope=row style="text-align: left;" | Substrate materials
|style="background:WhiteSmoke; color:black"|
|
*Silicon, glass, and polymer substrates
*<span style="color:red">'''No polymer substrates'''</span><br>
*Film or pattern of all but Type IV
*Silicon substrates
|style="background:WhiteSmoke; color:black"|
*III-V substrates
<b>No metals allowed! This includes metal oxides</b>
*Glass substrates
*Silicon, glass, and polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
*Film or pattern of photoresist/polymer
|
|style="background:WhiteSmoke; color:black"|
*<span style="color:red">'''No metals'''</span><br>
*Silicon, III-V, and glass substrates
*<span style="color:red">'''No metal oxides'''</span><br>
*Film or pattern of all but Type IV
*<span style="color:red">'''No III-V materials'''</span><br>
|style="background:WhiteSmoke; color:black"|
*Silicon substrates
<b>No metal allowed!</b>
*Glass substrates
*Silicon, glass, and polymer substrates
*Polymer substrates
*Film or pattern of photoresist/polymer
*Films, or patterned films, of resists/polymers
|style="background:WhiteSmoke; color:black"|
|
*Silicon and glass substrates
*Silicon substrates
*Film or pattern of all but Type IV
*III-V substrates
|-
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates (only if clean)
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


= Plasma Ashing =
= Plasma Ashing process parameters=


{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
{| class="wikitable"
|-
!  !! [[Specific_Process_Knowledge/Lithography/Strip#Plasma_Asher_4|Resist stripping]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_3:_Descum|Descum]] !! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher_4|Descum]] !! Surface treatment !! Other ashing of organic material
|-
! scope=row style="text-align: left;" | Tool
| Plasma asher 4 & 5 || Plasma asher 3: Descum || Plasma asher 4 & 5 || Plasma asher 4 & 5 || Plasma asher 4 & 5
|-
|-
 
! scope=row style="text-align: left;" | Process pressure
|-style="background:silver; color:black"
| 1.3 mbar || 0.8 mbar || 1.3 mbar || 0.5-1.5 mbar || 0.5-1.5 mbar
|-
! scope=row style="text-align: left;" | Process gasses
|
*O<sub>2</sub> (100 sccm)
*N<sub>2</sub> (100 sccm)
|
*O<sub>2</sub> (45 sccm)
|
|
! Photoresist stripping
*O<sub>2</sub> (100 sccm)
! [[Specific_Process_Knowledge/Lithography/Descum|Descum after lithography]]
*N<sub>2</sub> (100 sccm)
! Surface treatment of plastic, ceramic and metal
! Ashing of organic material
|-
 
|-style="background:whitesmoke; color:black"
!Process pressure
|0.8- 1.2mbar
|0.5- 1.0mbar
|0.5- 1.0mbar
|0.8-1.5mbar
|-
 
|-style="background:silver; color:black"
!Process gases
|
|
*O<sub>2</sub> (400 sccm)
*O<sub>2</sub>
*N<sub>2</sub> (0-70 sccm)
*N<sub>2</sub>
*CF<sub>4</sub>
|
|
*O<sub>2</sub> (70-210 sccm)
*O<sub>2</sub>
*N<sub>2</sub> (0-70 sccm)
|O<sub>2</sub>, CF<sub>4</sub>, N<sub>2</sub> or their mixtures
|O<sub>2</sub>
|-
 
|-style="background:whitesmoke; color:black"
!Process  power
|600-1000W
|150-300W
|150-300W
|1000W or less for heat- sensitive materials
|-
|-
 
! scope=row style="text-align: left;" | Process power
|-style="background:silver; color:black"
| 1000 W || 100 W || 200 W || 150-1000 W || 150-1000 W
!Process time
|5-60 minutes
|1-5 minutes
|a few seconds to a few minutes
|Between 0.5 and 20 hours, depending on the material
|-
|-
 
! scope=row style="text-align: left;" | Process time
|-style="background:whitesmoke; color:black"
| 20-90 minutes || 1-10 minutes || 5-15 minutes || Seconds to minutes || Many hours, material dependent
!Batch size
|1-30
|1-10
|1 wafer at a time
|1 wafer at a time, use a container, e.g Petri dish
|-
|-
! scope=row style="text-align: left;" | Substrate batch
| 1-25 || 1-2 || 1-25 || 1-25 || 1-25
|}
|}


<br clear="all" />
<br clear="all" />


{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher03}}


Typical process time for stripping in plasma asher 1 or 2:
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher04}}
*1.5 µm AZ 5214E resist film: ~15 min
*10 µm AZ 4562 resist film: ~45 min


Typical process parameters:  
{{:Specific Process Knowledge/Lithography/Strip/plasmaAsher05}}
*O<sub>2</sub>: 400 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 1000 W


{{:Specific Process Knowledge/Lithography/Strip/resistStrip}}


A typical descum process in plasma asher 1 or 2:
{{:Specific Process Knowledge/Lithography/Strip/wetBench06and07}}
*O<sub>2</sub>: 70 ml/min
*N<sub>2</sub>: 70 ml/min
*Power: 150 W
*Time : 10 min


=Decommisioned tools=
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool can be found here.]]


'''NB: Use dedicated descum asher Plasma Asher 3: Descum for descumming.'''


==Plasma Asher 1==
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
===[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher1|Information about decommissioned tool]]===
==Plasma Asher 2==
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


===[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool]]===
[[Specific Process Knowledge/Lithography/Strip/PlasmaAsher2|Information about decommissioned tool can be found here.]]
 
==Plasma Asher 3: Descum==
[[image:2017-03-15 13.12.45.jpg|350x350px|thumb|Plasma Asher 3: Descum is placed A-5]]
 
The Plasma Asher 3: Descum dedicated for resist descum i.e. removal of remains resist traces after development. It has a small chamber, so you can only load one 4 inch substrate ad time or few smaller pieces.
 
In this machine, only O2 and N2 gases are used for processes.
 
The typical process parameters when operating the equipment:
 
*Photeresist descum
Pressure: 0.2 - 0.8mbar
Gas: O2
Power: 50% - 100%
Time: 1 -10 min., depending on photoresist type and thickness
 
The other materials have not been tested yet.
 
The user manual, user APV, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
 
===Process Information===
*[[Specific Process Knowledge/Lithography/Descum|Descum]]
 
<br clear="all" />
 
<!-- TARAN 220-03-05
==III-V Plasma Asher==
[[Image:III-V_asher.jpg|300x300px|thumb|Plasma asher for removing resist on III-V samples: positioned in A-5]]
 
Diener Pico Plasma Asher for III-V materials.
 
The user manual and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=186 LabManager] - '''requires login'''
 
<br clear="all" />
<br clear="all" />
-->
=Plasma Asher 4=
<span style="color:red">Coming soon</span>
=Plasma Asher 5=
<span style="color:red">Coming soon</span>
=Resist Strip=
[[Image:Resist_strip.jpg|300x300px|thumb|Resist strip bench in D-3]]
This resist strip is only for wafers without metal and SU-8.
There are one Remover 1165 bath for stripping and one IPA bath for rinsing.
'''Here are the main rules for resist strip use:'''
*Place the wafers in a wafer holder and put them in the first bath for 10 min, this time is depending how much resist you have on the surface.
*After the strip rinse your wafers in the IPA bath for 2-3 min.
*Rinse your wafers for 4-5 min. in running water after stripping.
The user manual and contact information can be found in LabManager: [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=385 Resist Strip] - '''requires login'''
<br clear="all" />
==Overview of wet bench 06 and 07==
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|-style="background:silver; color:black"
|
! [[Specific Process Knowledge/Lithography/Strip#Resist_Strip|Resist Strip]]
! [[Specific Process Knowledge/Lithography/LiftOff#Lift-off_wet_bench_07|Lift-off]]
|-
|-style="background:whitesmoke; color:black"
!General description'''
|Wet stripping of resist
|Lift-off process
|-
|-style="background:silver; color:black"
!Chemical solution
|NMP Remover 1165
|NMP Remover 1165
|-
|-style="background:whitesmoke; color:black"
!Process temperature
|Up to 65°C
|Up to 65°C
|-
|-style="background:silver; color:black"
!Batch size
|
1 - 25 wafers
|
1 - 25 wafers
|-
|-style="background:whitesmoke; color:black"
!Size of substrate
|
*100 mm wafers
*150 mm wafers
|
*100 mm wafers
*150 mm wafers
|-
|-style="background:silver; color:black"
!Allowed materials
|
*Silicon
*Silicon Oxide
*Silicon Nitride
*Silicon Oxynitride
|
All metals except Type IV (Pb, Te)
|-
|}
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Strip"