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Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide/Reactively sputtered SiO2 in Sputter-System Metal Oxide (PC1): Difference between revisions

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<gallery caption="Figure 2. Temparature changes without control during the RF substarte bias process." widths="600px" heights="400px" perrow="1">
<gallery caption="Figure 2. Temparature changes without control during the RF substarte bias process." widths="400px" heights="200px" perrow="1">
image:eves_RF_bias_and_temperature_PC1_2021.png|Temperature fluctuations.
image:eves_RF_bias_and_temperature_PC1_2021.png|Temperature fluctuations.
</gallery>
</gallery>
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No significant influence has been observed. However, the temperature does not remain constant, it oscillated back and forth and is controlled by PID parameters.
No significant influence has been observed. However, the temperature does not remain constant, it oscillated back and forth and is controlled by PID parameters.


<gallery caption="Figure 3. Different substarte temperatures. No RF bias." widths="500px" heights="400px" perrow="3">
<gallery caption="Figure 3. Different substarte temperatures. No RF bias." widths="270px" heights="250px" perrow="3">
image:eves_SiO2_20C.png| Deposition at room temperature. RF bias is not applied.
image:eves_SiO2_20C.png| Deposition at room temperature. RF bias is not applied.
image:eves_SiO2_200C.png|Deposition at 200&deg;C. RF bias is not applied.
image:eves_SiO2_200C.png|Deposition at 200&deg;C. RF bias is not applied.
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The installation of a "closed" dark space shield will completely prevent cross-contamination but will lower the deposition rate. Additionally, the lower pressure (below 3 mTorr) processes can be problematic to run due to the plasma instability.
The installation of a "closed" dark space shield will completely prevent cross-contamination but will lower the deposition rate. Additionally, the lower pressure (below 3 mTorr) processes can be problematic to run due to the plasma instability.


<gallery caption="Figure 5. Two different dark space shield configurations." widths="600px" heights="500px" perrow="2">
<gallery caption="Figure 5. Two different dark space shield configurations." widths="400px" heights="350px" perrow="2">
image:eves_opened_dark_space_shield.png| Opened dark space shield is installed.  
image:eves_opened_dark_space_shield.png| Opened dark space shield is installed.  
image:eves_closed_dark_space_shield.png| Closed dark space shield is installed.
image:eves_closed_dark_space_shield.png| Closed dark space shield is installed.
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The uniformity measurements were performed with 6-inch wafers <b>and installed closed darks space shield</b>, with three power settings (100W, 120W, and 140W). The pressure and gas flow remain the same. The measurements was conducted using [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer_VASE_and_Ellipsometer_M-2000V|VASE Ellipsometer]].
The uniformity measurements were performed with 6-inch wafers <b>and installed closed darks space shield</b>, with three power settings (100W, 120W, and 140W). The pressure and gas flow remain the same. The measurements was conducted using [[Specific_Process_Knowledge/Characterization/Optical_characterization#Ellipsometer_VASE_and_Ellipsometer_M-2000V|VASE Ellipsometer]].


<gallery caption="Figure 6. Thickness uniformity across 150mm Si wafer." widths="500px" heights="400px" perrow="3">
<gallery caption="Figure 6. Thickness uniformity across 150mm Si wafer." widths="270px" heights="250px" perrow="3">
image:eves_Uniformity_SiO2_100W.png| 100W Power. Closed dark space shield is installed. Standard deviation <b>std=0.307</b>. Average thickness <b>65.26 nm</b>.
image:eves_Uniformity_SiO2_100W.png| 100W Power. Closed dark space shield is installed. Standard deviation <b>std=0.307</b>. Average thickness <b>65.26 nm</b>.
image:eves_Uniformity_SiO2_120W.png| 120W Power. Closed dark space shield is installed. Standard deviation <b>std=0.314</b>. Average thickness <b>59.95 nm</b>.
image:eves_Uniformity_SiO2_120W.png| 120W Power. Closed dark space shield is installed. Standard deviation <b>std=0.314</b>. Average thickness <b>59.95 nm</b>.
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<gallery caption="Figure 8. Optical properties." widths="500px" heights="400px" perrow="2">
<gallery caption="Figure 8. Optical properties." widths="400px" heights="350px" perrow="2">
image:eves_SiO2_Cluster_Lesker_refractive_index.png| Refractive index of 120 nm SiO<sub>2</sub> prepared with 14 0W, 3 mTorr, 50 sccm Ar, 15 sccm O<sub>2</sub> and no substrate RF bias. Deposition time 5000s.
image:eves_SiO2_Cluster_Lesker_refractive_index.png| Refractive index of 120 nm SiO<sub>2</sub> prepared with 14 0W, 3 mTorr, 50 sccm Ar, 15 sccm O<sub>2</sub> and no substrate RF bias. Deposition time 5000s.
image:eves_SiO2_Cluster_Lesker_absorption_coefficient.png| Absorption coefficient of 120 nm SiO<sub>2</sub> prepared with 140 W, 3 mTorr, 50 sccm Ar, 15 sccm O<sub>2</sub> and no substrate RF bias. Deposition time 5000s.
image:eves_SiO2_Cluster_Lesker_absorption_coefficient.png| Absorption coefficient of 120 nm SiO<sub>2</sub> prepared with 140 W, 3 mTorr, 50 sccm Ar, 15 sccm O<sub>2</sub> and no substrate RF bias. Deposition time 5000s.
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The presented spectra have been taken from the film that was clean-sputtered with Ar ions at 1000 eV, high-current, and 10s time exposure.
The presented spectra have been taken from the film that was clean-sputtered with Ar ions at 1000 eV, high-current, and 10s time exposure.


<gallery caption="Figure 9. X-ray photoelectron spectroscopy." widths="500px" heights="400px" perrow="3">
<gallery caption="Figure 9. X-ray photoelectron spectroscopy." widths="270px" heights="250px" perrow="3">
image:eves_XPS_survey_20210809.png| SiO<sub>2</sub> survey scan.
image:eves_XPS_survey_20210809.png| SiO<sub>2</sub> survey scan.
image:eves_XPS_Si_2p_20210809.png| Si 2p High-resolution scan.
image:eves_XPS_Si_2p_20210809.png| Si 2p High-resolution scan.
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As it was mentioned earlier, the use of the Si target with the <b>oped dark space shield</b> leads to <b><span style="color: Coral">Cu</span></b> contamination, once the target gets old and heavily used. This is most likely due to the shrinkage of the target area. The XPS Cu 2p High-resolution scans reveal the difference in <b><span style="color: Coral">Cu</span></b> content in pure Si nonreactive sputtered film when an <b>open dark space shield</b> or <b>closed dark space shield</b> is installed.
As it was mentioned earlier, the use of the Si target with the <b>oped dark space shield</b> leads to <b><span style="color: Coral">Cu</span></b> contamination, once the target gets old and heavily used. This is most likely due to the shrinkage of the target area. The XPS Cu 2p High-resolution scans reveal the difference in <b><span style="color: Coral">Cu</span></b> content in pure Si nonreactive sputtered film when an <b>open dark space shield</b> or <b>closed dark space shield</b> is installed.


<gallery caption="Figure 10. X-ray photoelectron spectroscopy." widths="500px" heights="400px" perrow="2">
<gallery caption="Figure 10. X-ray photoelectron spectroscopy." widths="400px" heights="350px" perrow="2">
image:eves_XPS_Cu_open_dark_space_shield_20210809.png| Cu 2p High-resolution scan in sputtered Si thin films using the <b>open dark space shield</b> and the seasoned (old and heavily used) Si target.
image:eves_XPS_Cu_open_dark_space_shield_20210809.png| Cu 2p High-resolution scan in sputtered Si thin films using the <b>open dark space shield</b> and the seasoned (old and heavily used) Si target.
image:eves_XPS_Cu_closed_dark_space_shield_20210809.png| Cu 2p High-resolution scan in sputtered Si thin films using the <b>closed dark space shield</b> and the seasoned (old and heavily used) Si target.
image:eves_XPS_Cu_closed_dark_space_shield_20210809.png| Cu 2p High-resolution scan in sputtered Si thin films using the <b>closed dark space shield</b> and the seasoned (old and heavily used) Si target.
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SEM reveals that even very short etch time (1s.) is enough to damage SiO<sub>2</sub> reactively sputtered films. The result is presented in the figure. HF attacks the film as ” a whole” leaving the random structure.  
SEM reveals that even very short etch time (1s.) is enough to damage SiO<sub>2</sub> reactively sputtered films. The result is presented in the figure. HF attacks the film as ” a whole” leaving the random structure.  


<gallery caption="Figure 12. SEM inspection." widths="1000px" heights="400px" perrow="1">
<gallery caption="Figure 12. SEM inspection." widths="900px" heights="400px" perrow="1">
image:eves_SiO2_wet_etch_SEM_20210809.png| SEM images that shows SiO<sub>2</sub> films after HF exposure.
image:eves_SiO2_wet_etch_SEM_20210809.png| SEM images that shows SiO<sub>2</sub> films after HF exposure.
</gallery>
</gallery>


If the user wishes to etch SiO<sub>2</sub> films gently and controllable, it is recommended to select dry etch methods.
If the user wishes to etch SiO<sub>2</sub> films gently and controllable, it is recommended to select dry etch methods.
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