Jump to content

Specific Process Knowledge/Lithography/Descum: Difference between revisions

← Older edit
VisualWikitext
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,999 edits
Jehem (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, danchip
1,999 edits
No edit summary
 
(62 intermediate revisions by the same user not shown)
Line 8: Line 8:
__TOC__
__TOC__


=Plasma Asher 1=
= Descum Comparison Table =
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>
{| class="wikitable"
 
|-
===[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool]]===
!
 
! [[Specific_Process_Knowledge/Lithography/Descum/plasmaAsher03|Plasma Asher 3: Descum]]
=Plasma Asher 2=
! [[Specific_Process_Knowledge/Lithography/Descum/plasmaAsher04|Plasma Asher 4 (Clean)]]
<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>
! [[Specific_Process_Knowledge/Lithography/Descum/plasmaAsher05|Plasma Asher 5 (Dirty)]]
 
|-
===[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool]]===
! scope=row style="text-align: left;" |  Purpose
 
| Resist descum
=Plasma Asher 3: Descum=
|
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
*Resist stripping
 
*Resist descum
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
|
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
*Resist stripping
 
*Resist descum
 
'''Ashing of  AZ MiR701 resist:'''<br>
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
 
 
'''Testing different power settings:'''
[[image:AZMIR701_power_settings.png|640px|thumb|Descum results for different power settings]]
 
'''Recipe settings:'''
*O2 flow: 5 sccm
*N2 flow: 0
*Pressure: 0.2 mbar
*Power: Varied
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Power
|-
|'''recipe 1''' || 50/0 || 52/31 || 50%
|-
|-
|'''recipe 2''' || 100/0 || 53/31 || 100%
! scope=row style="text-align: left;" | Method
| Plasma ashing
| Plasma ashing
| Plasma ashing
|-
|-
|'''recipe 3''' || 20/0 || 51/34 || 20%
! scope=row style="text-align: left;" | Process gasses
| O<sub>2</sub> (50 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
|
*O<sub>2</sub> (0-500 sccm)
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
|-
|-
|}
! scope=row style="text-align: left;" | Process power
|}
| 10-100 W (10-100%)
<br clear="all" />
| 150-1000 W
 
| 150-1000 W
 
'''Testing different pressure settings:'''
[[image:AZMIR701_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]
 
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-  
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2
|-
|-
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8
! scope=row style="text-align: left;" | Substrate batch
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|
*Chips: several
*50 mm wafer: several
*100 mm wafer: 1-25
*150 mm wafer: 1-25
*200 mm wafer: 1-25
|-
|-
! scope=row style="text-align: left;" | Substrate materials
|
*<span style="color:red">'''No polymer substrates'''</span><br>
*Silicon substrates
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
|}
<br clear="all" />


'''Ashing of AZ5214E resist:'''
=Decommisioned tools=
[[image:AZ5214E_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]


'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)


<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


'''Experiment parameters:'''
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 17 || 0,4
|-
|'''recipe 2''' || 100/0 || 37/39 || 45 || 0,8
|-
|}
|}
<br clear="all" />
<br clear="all" />
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/Descum"