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__TOC__
__TOC__


=Plasma Asher 1=
= Descum Comparison Table =
[[File:Descum Results aug 2019.png|640px|thumb|right|Descum results plasma asher 1. September 2019]]
{| class="wikitable"
 
<span style="color:red">This tool has been decomissioned 2024-12-02.</span>
 
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=55 LabManager] - '''requires login'''
 
Descum of AZ5214E resist on 50mm silicon wafer. Wafer was placed horisontally in chamber on a 100 mm carier wafer.
 
 
'''Recipe 1:'''<br>
Note: Plasma asher was cold before use
*O2 flow: 70 ml/min
*N2 flow: 70 ml/min
*Power: 150 W
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 5 || 7 || 10 || 10 
|-
|'''Etched Thickness (nm)'''|| 14.2 || 16.3 || 47.6 || 123.2 || 854.3 || 862.1
|-
|-
|}
!
|}
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 3: Descum|Plasma Asher 3: Descum]]
 
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma_Asher 4|Plasma Asher 4 (Clean)]]
 
! [[Specific_Process_Knowledge/Lithography/Descum#Plasma Asher 5|Plasma Asher 5 (Dirty)]]
'''Recipe 2:'''<br>
Note: Plasma asher was cold before use
*O2 flow: 500 ml/min
*N2 flow: 0 ml/min
*Power: 500 W
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 5 || 7 || 10 || 10 
|-
|'''Etched Thickness (nm)'''|| - || 8.1 || 32.9 || 271.1 || 495.6 || 446.2
|-
|-
|}
! scope=row style="text-align: left;" | Purpose
|}
| Resist descum
<br clear="all" />
|
==Descum tests on UV resists==
*Resist stripping
''Conny Hjort & Jesper Hanberg, September 2021''
*Resist descum
[[Image:PA1_descum.jpg|640px|thumb|Descum results plasma asher 1. August 2021]]
|
 
*Resist stripping
Descum of different resists, AZ5214E, AZ701 MiR and AZ2020 nLOF, on a single 100mm wafer was tested. Wafer was placed vertically in the middle of glass carrier.
*Resist descum
 
'''Recipe settings:'''<br>
Note: plasma Asher was cold before use.
*O2 flow: 70 ml/min
*N2 flow: 70 ml/min
Power: 150 W
 
Minor temperature rise during processing was observed, but not more than 5 degrees. Starting chamber pressure was around 0.5 mbar.
 
 
'''1,5 um AZ5214E resist:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
   
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-
|'''Etched Thickness (nm)'''|| 6,28 || 102,99 || 76,92 || N/A || N/A
|-
|-
|}
! scope=row style="text-align: left;" | Method
|}
| Plasma ashing
 
| Plasma ashing
 
| Plasma ashing
'''1,5 um AZ5214E resist placed horizontally in the carrier:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-
|'''Etched Thickness (nm)'''|| 63,03 || 143,32 || 304,29  || 372,59 || N/A
|-
|-
|}
! scope=row style="text-align: left;" | Process gasses
|}
| O<sub>2</sub> (50 sccm)
 
|
 
*O<sub>2</sub> (0-500 sccm)
'''1,5 um AZ701MiR resist:'''
*N<sub>2</sub> (0-500 sccm)
{| {{table}}
|
| align="center" |
*O<sub>2</sub> (0-500 sccm)
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
*N<sub>2</sub> (0-500 sccm)
*CF<sub>4</sub> (0-200 sccm)
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-  
|'''Etched Thickness (nm)'''|| 268,88 || 199,54 || 219,03 || 200,86 || 292,15
|-
|-
|}
! scope=row style="text-align: left;" | Process power
|}
| 10-100 W (10-100%)
 
| 150-1000 W
 
| 150-1000 W
'''1,5 um AZ 2020nLOF resist:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 5 || 7
|-  
|'''Etched Thickness (nm)'''|| 1,68 || 76,51 || 169,72 || 481,96 || 272,59
|-
|-
|}
! scope=row style="text-align: left;" | Substrate batch
|}
|
<br clear="all" />
*Chips: several
 
*50 mm wafer: several
=Plasma Asher 2=
*100 mm wafer: 1
''Jitka Urbánková & Jesper Hanberg, December 2019''
|
[[image:descum_graf.jpg|640px|thumb|Descum results plasma asher 2 - recipe 1]]
*Chips: several
 
*50 mm wafer: several
<span style="color:red">This tool has been decomissioned 2024-12-02.</span>
*100 mm wafer: 1-25
 
*150 mm wafer: 1-25
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=200 LabManager] - '''requires login'''
*200 mm wafer: 1-25
 
|
Descum of AZ  Mir 701 resist on 100mm silicon wafer. Five wafers were placed vertically in chamber.
*Chips: several
 
*50 mm wafer: several
 
*100 mm wafer: 1-25
'''recipe 1:'''
*150 mm wafer: 1-25
*O2 flow: 100 ml/min
*200 mm wafer: 1-25
*N2 flow: 100 ml/min
*Power: 150 W
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"  
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1|| 2 || 3 || 4 || 6 || 7 || 8 || 9 || 10 || 12 || 14 || 15 || 20
|-
|'''Etched Thickness (nm)'''|| 8,7 || 5,1 || 12,5 || 6,2 || 31,8 || 86,0 || 25,7 || 46,8 || 38,3 || 49,7 || 59,4 || 140,1 || 360,7
|-
|'''Initial temperature (°C)'''|| 28 || 21 || 31 || 21 || 22 || 28 || 25 || 24 || 21 || 24 || 24 || 22 || 22
|-
|}
|}
 
[[image:graf_descum-recipe2.png|640px|thumb|Descum results plasma asher 2 - recipe 2]]
 
 
'''recipe 2:'''
*O2 flow: 500 ml/min
*N2 flow: 0 ml/min
*Power: 200 W
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
|'''Ashing time (min)'''|| 1 ||2 ||3 ||4 ||5 ||6 ||7 ||8 ||10 ||12 ||15 ||20
|-  
|'''Etched Thickness (nm)'''||8,1 ||9,4 ||16,8 ||55,2 ||44,0 ||47,5 ||42,5 ||55,1 ||85,3 ||122,4 ||184,8 ||305,9
|-  
|'''Initial temperature (°C)'''||22 ||21 ||21 ||22 ||22 ||22 ||21 ||21 ||20 ||21 ||21 ||22
|-
|}
|}
 
A linear time dependence was observed after etching 7 minutes or more (recipe 2).
<br clear="all" />
 
=Plasma Asher 3: Descum=
The user manual(s), quality control procedure(s) and results and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=423 LabManager] - '''requires login'''
 
Plasma Asher 3 is specifically used for controlled descum process after lithography. Please note that you only can process a single 100 mm wafer, or one small sample, at a time.
The plasma asher is equipped with 2 gaslines: oxygen and nitrogen, but all standard processes use only oxygen (as recommended by Diener).
 
 
'''Ashing of  AZ MiR701 resist:'''<br>
You can use two different descum process developments: you can either change power settings or processing chamber pressure.
 
 
'''Testing different power settings:'''
[[image:AZMIR701_power_settings.png|640px|thumb|Descum results for different power settings]]
 
'''Recipe settings:'''
*O2 flow: 5 sccm
*N2 flow: 0
*Pressure: 0.2 mbar
*Power: Varied
 
 
'''Experiment parameters:'''
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Power
|-  
|'''recipe 1''' || 50/0 || 52/31 || 50%
|-
|-
|'''recipe 2''' || 100/0 || 53/31 || 100%
! scope=row style="text-align: left;" | Substrate materials
|-
|
|'''recipe 3''' || 20/0 || 51/34 || 20%
*<span style="color:red">'''No polymer substrates'''</span><br>
|-
*Silicon substrates
|}
*III-V substrates
*Glass substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|
*<span style="color:red">'''No metals'''</span><br>
*<span style="color:red">'''No metal oxides'''</span><br>
*<span style="color:red">'''No III-V materials'''</span><br>
*Silicon substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of resists/polymers
|
*Silicon substrates
*III-V substrates
*Glass substrates
*Polymer substrates
*Films, or patterned films, of any material except type IV (Pb, Te)
|}
|}
<br clear="all" />
<br clear="all" />


{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher03}}


'''Testing different pressure settings:'''
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher04}}
[[image:AZMIR701_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]
 
'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)
 


'''Experiment parameters:'''
{{:Specific Process Knowledge/Lithography/Descum/plasmaAsher05}}
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 5 || 0,2
|-
|'''recipe 2''' || 100/0 || 37/38 || 45 || 0,8
|-
|}
|}
<br clear="all" />


'''Ashing of AZ5214E resist:'''
=Decommisioned tools=
[[image:AZ5214E_pressure_settings.png|640px|thumb|Descum results for different pressure settings]]
<span style="color:red">Plasma asher 1 was decommissioned 2024-12-02.</span>


[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher1|Information about decommissioned tool can be found here.]]


'''Recipe settings:'''
*O2 flow: varied
*N2 flow: 0
*Pressure: varied
*Power: V100% (100 W)


<span style="color:red">Plasma asher 2 was decommissioned 2024-12-02.</span>


'''Experiment parameters:'''
[[Specific Process Knowledge/Lithography/Descum/PlasmaAsher2|Information about decommissioned tool can be found here.]]
{| {{table}}
| align="center" |
{|border="1" cellspacing="1" cellpadding="10" style="text-align:left;"
|- style="background:LightGrey"
| ||FW/REV|| C2/C1 || Oxygen || Pressure
|-
|'''recipe 1'''|| 100/0 || 53/31 || 17 || 0,4
|-
|'''recipe 2''' || 100/0 || 37/39 || 45 || 0,8
|-
|}
|}
<br clear="all" />
<br clear="all" />
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