Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano121: Difference between revisions

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<!-- Ok, jmli 2020-0120 -->
<!-- Page reviewed 9/8-2022 jmli -->
== The nano1.21 recipe ==
== The nano1.21 recipe ==
<!-- revised 1/6-2015 by jmli -->


{| border="2" cellpadding="2" cellspacing="1"  
{| border="2" cellpadding="2" cellspacing="1"  
Line 31: Line 38:
|-
|-
| Mask
| Mask
| nm zep etched down to 6dgh4 nm
| 211 nm zep etched down to 74 nm
|-  
|-  
|}
|}




<gallery caption="The results of the nano1.2 recipe" widths="250" heights="200" perrow="3">
<gallery caption="The results of the nano1.21 recipe" widths="250" heights="200" perrow="3">
image:WF_2E06_mar23B-030.jpg|The 30 nm trenches
image:WF_2E06_mar23B-030.jpg|The 30 nm trenches
image:WF_2E06_mar23B-060.jpg|The 60 nm trenches
image:WF_2E06_mar23B-060.jpg|The 60 nm trenches
Line 44: Line 51:
C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs
C4F8 75 sccm, SF6 38 sccm, 4 mTorr, Strike 3 secs @ 15 mTorr, 800 W CP, 50 W PP, -10 degs, 120 secs
</gallery>
</gallery>
{| {{table}}
| align="center" style="background:#f0f0f0;"|'''Nominal trench line width'''
| align="center" style="background:#f0f0f0;"|''''''
| align="center" style="background:#f0f0f0;"|'''30'''
| align="center" style="background:#f0f0f0;"|'''60'''
| align="center" style="background:#f0f0f0;"|'''90'''
| align="center" style="background:#f0f0f0;"|'''120'''
| align="center" style="background:#f0f0f0;"|'''150'''
| align="center" style="background:#f0f0f0;"|'''Avg'''
| align="center" style="background:#f0f0f0;"|'''Std'''
|-
| Etch rates||nm/min||168||182||185||189||191||183||9
|-
| Sidewall angle||degs||91||91||91||91||90||91||0
|-
| CD loss||nm/edge||7||-3||-3||-25||-26||-10||15
|-
| CD loss foot||nm/edge||12||9||10||-11||1||4||9
|-
| Bowing||||9||6||4||5||7||6||2
|-
| Bottom curvature||||-47||-34||-34||-26||-19||-32||10
|-
| zep||nm/min||||||||||||69||
|-
|
|}
<!-- revised -->

Latest revision as of 10:23, 9 August 2022



The nano1.21 recipe

Recipe nano1.21
Recipe Gas C4F8 75 sccm, SF6 38 sccm
Pressure 4 mTorr, Strike 3 secs @ 15 mTorr
Power 800 W CP, 50 W PP
Temperature -10 degs
Hardware 100 mm Spacers
Time 120 secs
Conditions Run ID 1925
Conditioning Sequence: Oxygen clean, MU tests, processes, no oxygen between runs
Mask 211 nm zep etched down to 74 nm



Nominal trench line width ' 30 60 90 120 150 Avg Std
Etch rates nm/min 168 182 185 189 191 183 9
Sidewall angle degs 91 91 91 91 90 91 0
CD loss nm/edge 7 -3 -3 -25 -26 -10 15
CD loss foot nm/edge 12 9 10 -11 1 4 9
Bowing 9 6 4 5 7 6 2
Bottom curvature -47 -34 -34 -26 -19 -32 10
zep nm/min 69


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