Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch: Difference between revisions

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{| border="2" cellspacing="1" cellpadding="3" align="center"
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Etch/DRIE-Pegasus/nanoetch click here]'''
<!--Checked for updates on 30/7-2018 - ok/jmli -->
<!--Checked for updates on 5/10-2020 - ok/jmli -->
 
== Development of continuous nanoetch ==
{{Template:Author-jmli1}}
<!--Checked for updates on 2/02-2023 - ok/jmli -->
 
The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% ) of silicon to be etched. If you intend to etch most of the surface of the wafer to create very small posts or ridges (rather than holes or trenches)
 
The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table.
 
 
 
{| border="2" cellspacing="1" cellpadding="3" style="text-align:center;"
!Recipe
!Recipe
!nano1.0
!nano1.0
Line 6: Line 20:
!nano1.3
!nano1.3
!nano1.21
!nano1.21
!nano1.4
!nano1.41
!nano1.42
!nano1.43
|-
|-
!C<sub>4</sub>F<sub>8</sub> (sccm)
!C<sub>4</sub>F<sub>8</sub> (sccm)
Line 12: Line 30:
|52
|52
|52
|52
|75
|75
|75
|75
|75
|75
|-
|-
!SF<sub>6</sub> (sccm)
!SF<sub>6</sub> (sccm)
|38
|38
|38
|38
|38
|38
|38
|38
Line 22: Line 48:
|-
|-
!O<sub>2</sub> (sccm)
!O<sub>2</sub> (sccm)
|0
|0
|0
|0
|0
|0
|0
|0
Line 29: Line 59:
|-
|-
! Coil power (W)
! Coil power (W)
|800 (forward)
|800 (F)
|600 (forward)
|600 (F)  
|800 (forward)
|800 (F)  
|600 (forward)
|600 (F)
|800 (forward)
|800 (F)
|800 (F)
|800 (F)
|800 (F)
|800 (F)  
|-
|-
!Platen power (W)
!Platen power (W)
Line 41: Line 75:
|40
|40
|50
|50
|50
|75
|40
|30
|-
|-
! Pressure (mtorr)
! Pressure (mtorr)
|4
|4
|4
|4
|4
|4
|4
|4
Line 55: Line 97:
| -10
| -10
| -10
| -10
| -20
| -20
| -20
| -20
|-
|-
! Process time (s)
! Process time (s)
|120
|120
|120
|120
|120
|120
|120
|120
Line 63: Line 113:
|120
|120
|-
|-
! Nominal line width
! colspan="10" align="center"| Etch rates (nm/min)
! colspan="5" align="center"| Etched depths (nm)
|-
|-
! 30 nm
| Averages||295||228||299||235||183||183||166||160||148
|
|
|
|
|
|-
|-
!60 nm
| Std. Dev||36||29||37||20||9||9||9||8||6
|
|
|
|
|
|-
|-
!90 nm
! colspan="10" align="center"| Zep etch rate (nm/min)
|
|
|
|
|
|-
|-
!120 nm
| || ||172||95||94||69||67||101||65||55
|
|
|
|
|
|-
|-
!150 nm
! colspan="10" align="center"| Sidewall angle (degrees)
|
|
|
|
|
|-
|-
! Nominal line width
| Averages||93||94||92||94||91||91||90||90||90
! colspan="5" align="center"| Etch rates in trenches (nm/min)
|-
|-
!30 nm
| Std. Dev||1||1||0||1||0||0||1||0||0
|
|
|
|
|
|-
|-
!60 nm
! colspan="10" align="center"| CD loss (nm pr edge)
|
|
|
|
|
|-
|-
!90 nm
| Averages||-11||-13||-17||-10||-10||-10||-20||-13||-24
|
|
|
|
|
|-
|-
!120 nm
| Std. Dev||12||10||11||14||15||15||16||15||21
|
|
|
|
|
|-
|-
!150 nm
! colspan="10" align="center"| Bowing (nm)
|
|
|
|
|
|-
|-
|
| Averages||31||42||13||16||6||6||3||-3||0
! colspan="5" align="center"| Etch rates in zep resist (nm/min)
|-
|-
! One point on wafer
| Std. Dev||7||6||4||3||2||2||2||3||1
|
|-
|
! colspan="10" align="center"| Bottom curvature
|
|-
|
| Averages||-45||-45||-44||-43||-32||-32||-34||-32||-39
|
|-
| Std. Dev||5||7||4||9||10||10||9||8||9
|-
|-
! Images
! Images
Line 155: Line 153:
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano13|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano121|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano121|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano14|Images]]
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano141|Images]]
|'''[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142|Images]]'''
|[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano143|Images]]
|-
|-
|}
|}


*[[Specific Process Knowledge/Etch/ICP Metal Etcher|ICP Metal Etch nanoetch]]


The nanoetch
 
*[[Specific Process Knowledge/Etch/ICP Metal Etcher/silicon/nano|Etch of nanostructures in silicon on the ICP Metal Etcher]]
*[[Specific Process Knowledge/Etch/DRIE-Pegasus/nanoetch/nano142-pxnano2|Nanoetch contest: DRIE-Pegasus versus ASE (nano1.42 versus pxnano2)]]
 
== Development of switched nanoetch process ==
 
On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.
 
 
{| border="2" cellpadding="2" cellspacing="1" style="text-align:center;"
|+ '''Process parameters'''
|-
! rowspan="2" width="100"| Recipe
! rowspan="2" width="20"| Step
! rowspan="2" width="20"| Temp.
! colspan="6" | Deposition step
! colspan="7" | Etch step
! colspan="2" | Process observations
|-
! width="40" | Time
! width="40" | Pressure
! width="40" | C<sub>4</sub>F<sub>8</sub>
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Time
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Pressure]]
! width="40" | C<sub>4</sub>F<sub>8</sub>
! width="40" | SF<sub>6</sub>
! width="40" | O<sub>2</sub>
! width="40" | Coil
! width="40" | Platen
! width="40" | [[Specific Process Knowledge/Etch/DRIE-Pegasus/Parameters| Hardware]]
! width="40" | Runs
|-
! nanobosch6
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 40
| 60
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch6 | Click]]
|-
! nb-1.0
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.0 | Click]]
|-
! nb-1.1
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
| 350
! 50
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.1 | Click]]
|-
! nb-1.2
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 50
| 50
| 5
! 500
| 50
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
! barcstrip
| A
| 20
|
|
|
|
|
|
| 30
| 4 (3@15)
| 0
| 0
| 40
! 200
| 20
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/barcstrip | Click]]
|-
! nanobosch7
| A
| 20
| 2.5
| 10
| 50
| 0
| 0
| 500
| 5.0
| 10
| 40
| 60
| 5
| 350
| 30
| LF+B100
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nanobosch7 | Click]]
|-
 
 
|-
!      <!-- recipe name -->
|      <!-- step -->
|      <!-- chiller temperature -->
|      <!-- dep time -->
|      <!-- dep pressure -->
|      <!-- dep C4F8 flow -->
|      <!-- dep SF6 flow -->
|      <!-- dep O2 flow -->
|      <!-- dep coil power -->
|      <!-- etch time -->
|      <!-- etch pressure -->
|      <!-- etch C4F8 flow -->
|      <!-- etch SF6 flow -->
|      <!-- etch O2 flow -->
!      <!-- etch coil power -->
|      <!-- etch platen power -->
| LF+B100      <!-- hardware -->
| [[Specific Process Knowledge/Etch/DRIE-Pegasus/nanobosch/nb-1.2 | Click]]
|-
|}

Latest revision as of 14:51, 2 February 2023

Feedback to this page: click here

Development of continuous nanoetch

Unless otherwise stated, all content on this page was created by Jonas Michael-Lindhard, DTU Nanolab

The recipes below have been run on 2" wafers with 30/60/90/120/150 nm lines in zep resist. The wafers were crystalbonded to a 4" oxide carrier leaving only a very small fraction (much less than 1% ) of silicon to be etched. If you intend to etch most of the surface of the wafer to create very small posts or ridges (rather than holes or trenches)

The most used one is the nano1.42 recipe - to access the results, click on the bold link in the bottom of the table.


Recipe nano1.0 nano1.1 nano1.2 nano1.3 nano1.21 nano1.4 nano1.41 nano1.42 nano1.43
C4F8 (sccm) 52 52 52 52 75 75 75 75 75
SF6 (sccm) 38 38 38 38 38 38 38 38 38
O2 (sccm) 0 0 0 0 0 0 0 0 0
Coil power (W) 800 (F) 600 (F) 800 (F) 600 (F) 800 (F) 800 (F) 800 (F) 800 (F) 800 (F)
Platen power (W) 50 50 50 40 50 50 75 40 30
Pressure (mtorr) 4 4 4 4 4 4 4 4 4
Temperature (degs C) 10 10 -10 -10 -10 -20 -20 -20 -20
Process time (s) 120 120 120 120 120 120 120 120 120
Etch rates (nm/min)
Averages 295 228 299 235 183 183 166 160 148
Std. Dev 36 29 37 20 9 9 9 8 6
Zep etch rate (nm/min)
172 95 94 69 67 101 65 55
Sidewall angle (degrees)
Averages 93 94 92 94 91 91 90 90 90
Std. Dev 1 1 0 1 0 0 1 0 0
CD loss (nm pr edge)
Averages -11 -13 -17 -10 -10 -10 -20 -13 -24
Std. Dev 12 10 11 14 15 15 16 15 21
Bowing (nm)
Averages 31 42 13 16 6 6 3 -3 0
Std. Dev 7 6 4 3 2 2 2 3 1
Bottom curvature
Averages -45 -45 -44 -43 -32 -32 -34 -32 -39
Std. Dev 5 7 4 9 10 10 9 8 9
Images Images Images Images Images Images Images Images Images Images


Development of switched nanoetch process

On the basis of the pxnano2 recipe from the ASE we will try to make a similar Bosch process on the Pegasus.


Process parameters
Recipe Step Temp. Deposition step Etch step Process observations
Time Pressure C4F8 SF6 O2 Coil Time Pressure C4F8 SF6 O2 Coil Platen Hardware Runs
nanobosch6 A 20 2.5 10 50 0 0 500 5.0 10 40 60 5 350 30 LF+B100 Click
nb-1.0 A 20 2.5 10 50 0 0 500 5.0 10 50 50 5 350 30 LF+B100 Click
nb-1.1 A 20 2.5 10 50 0 0 500 5.0 10 50 50 5 350 50 LF+B100 Click
nb-1.2 A 20 2.5 10 50 0 0 500 5.0 10 50 50 5 500 50 LF+B100 Click
barcstrip A 20 30 4 (3@15) 0 0 40 200 20 LF+B100 Click
nanobosch7 A 20 2.5 10 50 0 0 500 5.0 10 40 60 5 350 30 LF+B100 Click
LF+B100 Click
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